Li, J., Bergsten, J., Pourkabirian, A., & Grahn, J. (2024). Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content. IEEE Journal of the Electron Devices Society, 12, 243. https://doi.org/10.1109/JEDS.2024.3371905
Citácia podle Chicago (17th ed.)Li, Junjie, Johan Bergsten, Arsalan Pourkabirian, a Jan Grahn. "Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content." IEEE Journal of the Electron Devices Society 12 (2024): 243. https://doi.org/10.1109/JEDS.2024.3371905.
Citácia podľa MLA (8th ed.)Li, Junjie, et al. "Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content." IEEE Journal of the Electron Devices Society, vol. 12, 2024, p. 243, https://doi.org/10.1109/JEDS.2024.3371905.