Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 )
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| Název: | Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 ) |
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| Autoři: | Ranjan, Alok, 1992, Zeng, Lunjie, 1983, Olsson, Eva, 1960 |
| Zdroj: | ACS Applied Electronic Materials. 6(11):8540-8548 |
| Témata: | gate dielectric, Sb O 2 3, in situ TEM, high-κ, molecular crystal, 2D materials |
| Popis: | High-κ gate dielectrics compatible with two-dimensional (2D) materials are crucial for advanced electronics, and Sb2O3 (antimony trioxide) shows significant potential. Here, we show that the soft breakdown induces oxygen vacancies and migration of copper into Sb2O3. Hard breakdown, driven by joule heating, gives rise to a substantial temperature increase, leading to morphological transformations and oxygen redistribution. In situ transmission electron microscopy (in situ TEM) measurements correlated with device performance show the formation of nanoconducting filaments due to the increased concentration of oxygen vacancies and copper migration in connection with the soft breakdown. The hard breakdown is associated with the formation of antimony-enriched nanocrystals. These findings offer critical insights into the suitability of Sb2O3 as a high-κ gate dielectric. |
| Popis souboru: | electronic |
| Přístupová URL adresa: | https://research.chalmers.se/publication/543835 https://research.chalmers.se/publication/543835/file/543835_Fulltext.pdf |
| Databáze: | SwePub |
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| Items | – Name: Title Label: Title Group: Ti Data: Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 ) – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ranjan%2C+Alok%22">Ranjan, Alok</searchLink>, 1992<br /><searchLink fieldCode="AR" term="%22Zeng%2C+Lunjie%22">Zeng, Lunjie</searchLink>, 1983<br /><searchLink fieldCode="AR" term="%22Olsson%2C+Eva%22">Olsson, Eva</searchLink>, 1960 – Name: TitleSource Label: Source Group: Src Data: <i>ACS Applied Electronic Materials</i>. 6(11):8540-8548 – Name: Subject Label: Subject Terms Group: Su Data: <searchLink fieldCode="DE" term="%22gate+dielectric%22">gate dielectric</searchLink><br /><searchLink fieldCode="DE" term="%22Sb+O+2+3%22">Sb O 2 3</searchLink><br /><searchLink fieldCode="DE" term="%22in+situ+TEM%22">in situ TEM</searchLink><br /><searchLink fieldCode="DE" term="%22high-κ%22">high-κ</searchLink><br /><searchLink fieldCode="DE" term="%22molecular+crystal%22">molecular crystal</searchLink><br /><searchLink fieldCode="DE" term="%222D+materials%22">2D materials</searchLink> – Name: Abstract Label: Description Group: Ab Data: High-κ gate dielectrics compatible with two-dimensional (2D) materials are crucial for advanced electronics, and Sb2O3 (antimony trioxide) shows significant potential. Here, we show that the soft breakdown induces oxygen vacancies and migration of copper into Sb2O3. Hard breakdown, driven by joule heating, gives rise to a substantial temperature increase, leading to morphological transformations and oxygen redistribution. In situ transmission electron microscopy (in situ TEM) measurements correlated with device performance show the formation of nanoconducting filaments due to the increased concentration of oxygen vacancies and copper migration in connection with the soft breakdown. The hard breakdown is associated with the formation of antimony-enriched nanocrystals. These findings offer critical insights into the suitability of Sb2O3 as a high-κ gate dielectric. – Name: Format Label: File Description Group: SrcInfo Data: electronic – Name: URL Label: Access URL Group: URL Data: <link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/543835" linkWindow="_blank">https://research.chalmers.se/publication/543835</link><br /><link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/543835/file/543835_Fulltext.pdf" linkWindow="_blank">https://research.chalmers.se/publication/543835/file/543835_Fulltext.pdf</link> |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1021/acsaelm.4c01818 Languages: – Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 8540 Subjects: – SubjectFull: gate dielectric Type: general – SubjectFull: Sb O 2 3 Type: general – SubjectFull: in situ TEM Type: general – SubjectFull: high-κ Type: general – SubjectFull: molecular crystal Type: general – SubjectFull: 2D materials Type: general Titles: – TitleFull: Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb 2 O 3 ) Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ranjan, Alok – PersonEntity: Name: NameFull: Zeng, Lunjie – PersonEntity: Name: NameFull: Olsson, Eva IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 26376113 – Type: issn-locals Value: SWEPUB_FREE – Type: issn-locals Value: CTH_SWEPUB Numbering: – Type: volume Value: 6 – Type: issue Value: 11 Titles: – TitleFull: ACS Applied Electronic Materials Type: main |
| ResultId | 1 |