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Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors

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Název: Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors
Autoři: Md Hoque, Anamul, 1988, Poliakov, Aleksandr, 1990, Munkhbat, Battulga, 1988, Iordanidou, Konstantina, 1989, Agrawal, Abhay Vivek, 1993, Yankovich, Andrew, 1983, Mallik, Sameer Kumar, 1994, Zhang, Bing, 1982, Mitra, Richa, 1992, Kalaboukhov, Alexei, 1975, Olsson, Eva, 1960, Kubatkin, Sergey, 1959, Wiktor, Julia, 1988, Lara Avila, Samuel, 1983, Shegai, Timur, 1982, Dash, Saroj Prasad, 1975
Zdroj: Kvantplasmonik – en teknologi för foton-fotonväxelverkan på kvantnivå vid rumstemperatur 2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH) Visualisering av stark växelverkan mellan ljus och materia genom NEX-GEN-STEM Tvådimensionell spintronik minnesteknik Graphene Core Project 3 (Graphene Flagship) Topologi och magnetism i nya kvantmaterial Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur Stark plasmon-exciton koppling för effektiva foton-foton interaktioner 2D material-baserad teknologi för industriella applikationer (2D-TECH) Nano Letters. 25(5):1750-1757
Témata: crystallographically controlled nanostructuring, field-effect transistors, zigzagedges, transition metal dichalcogenides, diodes, 2D semiconductors, TMDs, WS2, nanoribbon
Popis: Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS2) nanoribbons as small as sub-10 nm in width. The WS2 nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.
Popis souboru: electronic
Přístupová URL adresa: https://research.chalmers.se/publication/545055
https://research.chalmers.se/publication/545092
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Md+Hoque%2C+Anamul%22">Md Hoque, Anamul</searchLink>, 1988<br /><searchLink fieldCode="AR" term="%22Poliakov%2C+Aleksandr%22">Poliakov, Aleksandr</searchLink>, 1990<br /><searchLink fieldCode="AR" term="%22Munkhbat%2C+Battulga%22">Munkhbat, Battulga</searchLink>, 1988<br /><searchLink fieldCode="AR" term="%22Iordanidou%2C+Konstantina%22">Iordanidou, Konstantina</searchLink>, 1989<br /><searchLink fieldCode="AR" term="%22Agrawal%2C+Abhay+Vivek%22">Agrawal, Abhay Vivek</searchLink>, 1993<br /><searchLink fieldCode="AR" term="%22Yankovich%2C+Andrew%22">Yankovich, Andrew</searchLink>, 1983<br /><searchLink fieldCode="AR" term="%22Mallik%2C+Sameer+Kumar%22">Mallik, Sameer Kumar</searchLink>, 1994<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Bing%22">Zhang, Bing</searchLink>, 1982<br /><searchLink fieldCode="AR" term="%22Mitra%2C+Richa%22">Mitra, Richa</searchLink>, 1992<br /><searchLink fieldCode="AR" term="%22Kalaboukhov%2C+Alexei%22">Kalaboukhov, Alexei</searchLink>, 1975<br /><searchLink fieldCode="AR" term="%22Olsson%2C+Eva%22">Olsson, Eva</searchLink>, 1960<br /><searchLink fieldCode="AR" term="%22Kubatkin%2C+Sergey%22">Kubatkin, Sergey</searchLink>, 1959<br /><searchLink fieldCode="AR" term="%22Wiktor%2C+Julia%22">Wiktor, Julia</searchLink>, 1988<br /><searchLink fieldCode="AR" term="%22Lara+Avila%2C+Samuel%22">Lara Avila, Samuel</searchLink>, 1983<br /><searchLink fieldCode="AR" term="%22Shegai%2C+Timur%22">Shegai, Timur</searchLink>, 1982<br /><searchLink fieldCode="AR" term="%22Dash%2C+Saroj+Prasad%22">Dash, Saroj Prasad</searchLink>, 1975
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <i>Kvantplasmonik – en teknologi för foton-fotonväxelverkan på kvantnivå vid rumstemperatur 2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH) Visualisering av stark växelverkan mellan ljus och materia genom NEX-GEN-STEM Tvådimensionell spintronik minnesteknik Graphene Core Project 3 (Graphene Flagship) Topologi och magnetism i nya kvantmaterial Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur Stark plasmon-exciton koppling för effektiva foton-foton interaktioner 2D material-baserad teknologi för industriella applikationer (2D-TECH) Nano Letters</i>. 25(5):1750-1757
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22crystallographically+controlled+nanostructuring%22">crystallographically controlled nanostructuring</searchLink><br /><searchLink fieldCode="DE" term="%22field-effect+transistors%22">field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22zigzagedges%22">zigzagedges</searchLink><br /><searchLink fieldCode="DE" term="%22transition+metal+dichalcogenides%22">transition metal dichalcogenides</searchLink><br /><searchLink fieldCode="DE" term="%22diodes%22">diodes</searchLink><br /><searchLink fieldCode="DE" term="%222D+semiconductors%22">2D semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22TMDs%22">TMDs</searchLink><br /><searchLink fieldCode="DE" term="%22WS2%22">WS2</searchLink><br /><searchLink fieldCode="DE" term="%22nanoribbon%22">nanoribbon</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS2) nanoribbons as small as sub-10 nm in width. The WS2 nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.
– Name: Format
  Label: File Description
  Group: SrcInfo
  Data: electronic
– Name: URL
  Label: Access URL
  Group: URL
  Data: <link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/545055" linkWindow="_blank">https://research.chalmers.se/publication/545055</link><br /><link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/545092" linkWindow="_blank">https://research.chalmers.se/publication/545092</link><br /><link linkTarget="URL" linkTerm="https://research.chalmers.se/publication/545092/file/545092_Fulltext.pdf" linkWindow="_blank">https://research.chalmers.se/publication/545092/file/545092_Fulltext.pdf</link>
PLink https://erproxy.cvtisr.sk/sfx/access?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edsswe&AN=edsswe.oai.research.chalmers.se.b8de5bab.415f.4f8f.81b1.35cda4a9ba87
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/acs.nanolett.4c01076
    Languages:
      – Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1750
    Subjects:
      – SubjectFull: crystallographically controlled nanostructuring
        Type: general
      – SubjectFull: field-effect transistors
        Type: general
      – SubjectFull: zigzagedges
        Type: general
      – SubjectFull: transition metal dichalcogenides
        Type: general
      – SubjectFull: diodes
        Type: general
      – SubjectFull: 2D semiconductors
        Type: general
      – SubjectFull: TMDs
        Type: general
      – SubjectFull: WS2
        Type: general
      – SubjectFull: nanoribbon
        Type: general
    Titles:
      – TitleFull: Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Md Hoque, Anamul
      – PersonEntity:
          Name:
            NameFull: Poliakov, Aleksandr
      – PersonEntity:
          Name:
            NameFull: Munkhbat, Battulga
      – PersonEntity:
          Name:
            NameFull: Iordanidou, Konstantina
      – PersonEntity:
          Name:
            NameFull: Agrawal, Abhay Vivek
      – PersonEntity:
          Name:
            NameFull: Yankovich, Andrew
      – PersonEntity:
          Name:
            NameFull: Mallik, Sameer Kumar
      – PersonEntity:
          Name:
            NameFull: Zhang, Bing
      – PersonEntity:
          Name:
            NameFull: Mitra, Richa
      – PersonEntity:
          Name:
            NameFull: Kalaboukhov, Alexei
      – PersonEntity:
          Name:
            NameFull: Olsson, Eva
      – PersonEntity:
          Name:
            NameFull: Kubatkin, Sergey
      – PersonEntity:
          Name:
            NameFull: Wiktor, Julia
      – PersonEntity:
          Name:
            NameFull: Lara Avila, Samuel
      – PersonEntity:
          Name:
            NameFull: Shegai, Timur
      – PersonEntity:
          Name:
            NameFull: Dash, Saroj Prasad
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 15306992
            – Type: issn-print
              Value: 15306984
            – Type: issn-locals
              Value: SWEPUB_FREE
            – Type: issn-locals
              Value: CTH_SWEPUB
          Numbering:
            – Type: volume
              Value: 25
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Kvantplasmonik – en teknologi för foton-fotonväxelverkan på kvantnivå vid rumstemperatur 2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH) Visualisering av stark växelverkan mellan ljus och materia genom NEX-GEN-STEM Tvådimensionell spintronik minnesteknik Graphene Core Project 3 (Graphene Flagship) Topologi och magnetism i nya kvantmaterial Spinntronik med topologiskt kvantmaterial och magnetisk heterostruktur Stark plasmon-exciton koppling för effektiva foton-foton interaktioner 2D material-baserad teknologi för industriella applikationer (2D-TECH) Nano Letters
              Type: main
ResultId 1