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On Specific Capacitance of SIS Junctions

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Title: On Specific Capacitance of SIS Junctions
Authors: Yadranjee Aghdam, Parisa, 1986, Marouf Rashid, Hawal, 1982, Pavolotskiy, Alexey, 1968, Desmaris, Vincent, 1977, Meledin, Denis, 1974, Belitsky, Victor, 1955
Source: 26TH INTERNATIONAL SYMPOSIUM ON SPACE TERAHERTZ TECHNOLOGY.
Description: We have discussed possible reasons of scatter in the specific capacitance measurement results reported by different authors. This observed scatter of the measurement data at higher critical current densities (lower RnA values) could be due variation of the tunnel barrier thickness within the same junction realized in various laboratories. We have shown this through modelling of the tunnel barrier as discrete areas of n, n-1 and n+1 monolayers. This results in a spread of the SIS junction specific capacitance for the same current density. Also, the reported data difference could be a consequence of the high uncertainty of the measurement methods. We developed and demonstrated a measurement method proved to provide a high accuracy in characterization of SIS junction capacitance. At the conference, we will present modelling and the data for direct measurement of SIS junction specific capacitance and compare these data with the earlier reported measurements.
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  Data: On Specific Capacitance of SIS Junctions
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  Data: <searchLink fieldCode="AR" term="%22Yadranjee+Aghdam%2C+Parisa%22">Yadranjee Aghdam, Parisa</searchLink>, 1986<br /><searchLink fieldCode="AR" term="%22Marouf+Rashid%2C+Hawal%22">Marouf Rashid, Hawal</searchLink>, 1982<br /><searchLink fieldCode="AR" term="%22Pavolotskiy%2C+Alexey%22">Pavolotskiy, Alexey</searchLink>, 1968<br /><searchLink fieldCode="AR" term="%22Desmaris%2C+Vincent%22">Desmaris, Vincent</searchLink>, 1977<br /><searchLink fieldCode="AR" term="%22Meledin%2C+Denis%22">Meledin, Denis</searchLink>, 1974<br /><searchLink fieldCode="AR" term="%22Belitsky%2C+Victor%22">Belitsky, Victor</searchLink>, 1955
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  Data: <i>26TH INTERNATIONAL SYMPOSIUM ON SPACE TERAHERTZ TECHNOLOGY</i>.
– Name: Abstract
  Label: Description
  Group: Ab
  Data: We have discussed possible reasons of scatter in the specific capacitance measurement results reported by different authors. This observed scatter of the measurement data at higher critical current densities (lower RnA values) could be due variation of the tunnel barrier thickness within the same junction realized in various laboratories. We have shown this through modelling of the tunnel barrier as discrete areas of n, n-1 and n+1 monolayers. This results in a spread of the SIS junction specific capacitance for the same current density. Also, the reported data difference could be a consequence of the high uncertainty of the measurement methods. We developed and demonstrated a measurement method proved to provide a high accuracy in characterization of SIS junction capacitance. At the conference, we will present modelling and the data for direct measurement of SIS junction specific capacitance and compare these data with the earlier reported measurements.
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      – Text: English
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      – TitleFull: On Specific Capacitance of SIS Junctions
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            NameFull: Yadranjee Aghdam, Parisa
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            NameFull: Marouf Rashid, Hawal
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            NameFull: Pavolotskiy, Alexey
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            NameFull: Desmaris, Vincent
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            NameFull: Meledin, Denis
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            NameFull: Belitsky, Victor
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          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2015
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            – TitleFull: 26TH INTERNATIONAL SYMPOSIUM ON SPACE TERAHERTZ TECHNOLOGY
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