Padovani, A., La Torraca, P., Aguirre, F. L., Ranjan, A., Raghavan, N., Pey, K. L., . . . Puglisi, F. M. (2025). Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric after Ions Irradiation. ACS Applied Materials & Interfaces, 17(37), 52814. https://doi.org/10.1021/acsami.5c09755
Chicago-Zitierstil (17. Ausg.)Padovani, Andrea, Paolo La Torraca, Fernando L. Aguirre, Alok Ranjan, Nagarajan Raghavan, Kin L. Pey, Felix Palumbo, und Francesco M. Puglisi. "Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric After Ions Irradiation." ACS Applied Materials & Interfaces 17, no. 37 (2025): 52814. https://doi.org/10.1021/acsami.5c09755.
MLA-Zitierstil (9. Ausg.)Padovani, Andrea, et al. "Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric After Ions Irradiation." ACS Applied Materials & Interfaces, vol. 17, no. 37, 2025, p. 52814, https://doi.org/10.1021/acsami.5c09755.