Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition - Stanishev, Vallery; Armakavicius, Nerijus; Gogova, Daniela; Nawaz, Muhammad; Rorsman, Niklas; Paskov, Plamen P.; Darakchieva, Vanya (Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum, 2023)