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Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

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Titel: Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Autoren: Stanishev, Vallery, Armakavicius, Nerijus, Gogova, Daniela, Nawaz, Muhammad, Rorsman, Niklas, 1964, Paskov, Plamen P., Darakchieva, Vanya
Quelle: Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum. 217
Schlagwörter: AlGaN, GaN, MOCVD, Structural properties, Electrical properties
Beschreibung: In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.
Dateibeschreibung: electronic
Zugangs-URL: https://research.chalmers.se/publication/537559
https://research.chalmers.se/publication/537559/file/537559_Fulltext.pdf
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Items – Name: Title
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  Data: Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Stanishev%2C+Vallery%22">Stanishev, Vallery</searchLink><br /><searchLink fieldCode="AR" term="%22Armakavicius%2C+Nerijus%22">Armakavicius, Nerijus</searchLink><br /><searchLink fieldCode="AR" term="%22Gogova%2C+Daniela%22">Gogova, Daniela</searchLink><br /><searchLink fieldCode="AR" term="%22Nawaz%2C+Muhammad%22">Nawaz, Muhammad</searchLink><br /><searchLink fieldCode="AR" term="%22Rorsman%2C+Niklas%22">Rorsman, Niklas</searchLink>, 1964<br /><searchLink fieldCode="AR" term="%22Paskov%2C+Plamen+P%2E%22">Paskov, Plamen P.</searchLink><br /><searchLink fieldCode="AR" term="%22Darakchieva%2C+Vanya%22">Darakchieva, Vanya</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <i>Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum</i>. 217
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22AlGaN%22">AlGaN</searchLink><br /><searchLink fieldCode="DE" term="%22GaN%22">GaN</searchLink><br /><searchLink fieldCode="DE" term="%22MOCVD%22">MOCVD</searchLink><br /><searchLink fieldCode="DE" term="%22Structural+properties%22">Structural properties</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+properties%22">Electrical properties</searchLink>
– Name: Abstract
  Label: Description
  Group: Ab
  Data: In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.
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        Value: 10.1016/j.vacuum.2023.112481
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      – Text: English
    Subjects:
      – SubjectFull: AlGaN
        Type: general
      – SubjectFull: GaN
        Type: general
      – SubjectFull: MOCVD
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      – TitleFull: Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
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            – TitleFull: Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum
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