Stanishev, V., Armakavicius, N., Gogova, D., Nawaz, M., Rorsman, N., Paskov, P. P., & Darakchieva, V. (2023). Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition. Center for III Nitride semiconductor technology (C3NiT) fas2 III-nitrider med låg defekttäthet för grön kraftelektronik Vacuum, 217, . https://doi.org/10.1016/j.vacuum.2023.112481
Citace podle Chicago (17th ed.)Stanishev, Vallery, Nerijus Armakavicius, Daniela Gogova, Muhammad Nawaz, Niklas Rorsman, Plamen P. Paskov, a Vanya Darakchieva. "Low Al-content N-type AlxGa1-xN Layers with a High-electron-mobility Grown by Hot-wall Metalorganic Chemical Vapor Deposition." Center for III Nitride Semiconductor Technology (C3NiT) Fas2 III-nitrider Med Låg Defekttäthet För Grön Kraftelektronik Vacuum 217 (2023). https://doi.org/10.1016/j.vacuum.2023.112481.
Citace podle MLA (9th ed.)Stanishev, Vallery, et al. "Low Al-content N-type AlxGa1-xN Layers with a High-electron-mobility Grown by Hot-wall Metalorganic Chemical Vapor Deposition." Center for III Nitride Semiconductor Technology (C3NiT) Fas2 III-nitrider Med Låg Defekttäthet För Grön Kraftelektronik Vacuum, vol. 217, 2023, https://doi.org/10.1016/j.vacuum.2023.112481.