Mebarki, M. A., Castillo, R. F. D., Meledin, D., Sundin, E., Thorsell, M., Papamichail, A., . . . Lund University, F. o. S. (2025). Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates. IEEE Transactions on Electron Devices, 72(8), 4042-4048. https://doi.org/10.1109/TED.2025.3581541
Citace podle Chicago (17th ed.)Mebarki, Mohamed Aniss, et al. "Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates." IEEE Transactions on Electron Devices 72, no. 8 (2025): 4042-4048. https://doi.org/10.1109/TED.2025.3581541.
Citace podle MLA (9th ed.)Mebarki, Mohamed Aniss, et al. "Cryogenic Trapping Effects in GaN-HEMTs: Influences of Fe-Doped Buffer and Field Plates." IEEE Transactions on Electron Devices, vol. 72, no. 8, 2025, pp. 4042-4048, https://doi.org/10.1109/TED.2025.3581541.