Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar) - Zhang, Hengfang; Chen, Jr-Tai; Papamichail, Alexis; Persson, Ingemar; Tran, Dat; Paskov, Plamen; Darakchieva, Vanya (Journal of Crystal Growth, 2025)