Electrical Properties of SiO2/GaN MOS Capacitors Fabricated on GaN(000\overline{1}) Substrates - Akitaka Yoshigoe; Heiji Watanabe; Hidetoshi Mizobata; Kazuki Tomigahara; Mikito Nozaki; Takayoshi Shimura; Takuji Hosoi; Yuhei Wada; 冨ケ原 一樹; 吉越 章隆; 和田 悠平; 志村 考功; et al. (2021)