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Effects of doping atoms (X= Dy, Sc, La, Ce) on the generalized stacking-fault of Al–Mg–Si alloys

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Názov: Effects of doping atoms (X= Dy, Sc, La, Ce) on the generalized stacking-fault of Al–Mg–Si alloys
Autori: Z. Zhang, Z.P. Ren, C.C. Hu, D.Q. Li, J. He
Zdroj: Journal of Materials Research and Technology, Vol 39, Iss , Pp 1670-1678 (2025)
Informácie o vydavateľovi: Elsevier, 2025.
Rok vydania: 2025
Zbierka: LCC:Mining engineering. Metallurgy
Predmety: Aluminum alloy, Element doping, Stacking fault, First-principles calculation, Electronic properties, Mining engineering. Metallurgy, TN1-997
Popis: Stacking faults (SFs) can be manipulated to enhance the mechanical properties of metal materials, particularly the strength. However, SFs are infrequently detected in Al matrix alloys due to the high stacking fault energy (SFE) of pure Al and its limited effect from most alloying elements. Consequently, the reinforcement of Al alloy with SFs has been a long-term challenge. HRTEM reveals the presence of stacking faults in novel La, Dy, and Sc-doped Al–Mg–Si alloys. The Al–Mg–Si–La alloy shows the highest stacking fault density and demonstrates superior ultimate tensile strength and elongation compared to the other doped alloys. The effects of doping elements on stacking faults are quantified by analyzing formation enthalpy (ΔHf) values and stacking fault energies of Al–Mg–Si-based alloys at different doping concentrations via first-principles calculations. Adding Dy, Sc, La, or Ce decreases both ΔHf and SFE in these alloys to varying degrees. 2.08 at.% Sc (2Sc atoms) doping reduces the ΔHf value of baseline Al–Mg–Si alloy by 95.36 %. And 2.08 at.% La (2La atoms) drastically lower the SFE of baseline Al–Mg–Si alloy by 26.8 %, with the best effect. The physical origin of reducing the SFEs of alloys is attributed to elements doping disturbing the lattice orientation and electronic environment of the matrix atoms, changing the flowability of charges during deformation, thereby enhancing the mechanical properties of the Al–Mg–Si-based alloys.
Druh dokumentu: article
Popis súboru: electronic resource
Jazyk: English
ISSN: 2238-7854
Relation: http://www.sciencedirect.com/science/article/pii/S223878542502410X; https://doaj.org/toc/2238-7854
DOI: 10.1016/j.jmrt.2025.09.156
Prístupová URL adresa: https://doaj.org/article/03f541a5fcf846dda7b64f059997bdfb
Prístupové číslo: edsdoj.03f541a5fcf846dda7b64f059997bdfb
Databáza: Directory of Open Access Journals
Popis
Abstrakt:Stacking faults (SFs) can be manipulated to enhance the mechanical properties of metal materials, particularly the strength. However, SFs are infrequently detected in Al matrix alloys due to the high stacking fault energy (SFE) of pure Al and its limited effect from most alloying elements. Consequently, the reinforcement of Al alloy with SFs has been a long-term challenge. HRTEM reveals the presence of stacking faults in novel La, Dy, and Sc-doped Al–Mg–Si alloys. The Al–Mg–Si–La alloy shows the highest stacking fault density and demonstrates superior ultimate tensile strength and elongation compared to the other doped alloys. The effects of doping elements on stacking faults are quantified by analyzing formation enthalpy (ΔHf) values and stacking fault energies of Al–Mg–Si-based alloys at different doping concentrations via first-principles calculations. Adding Dy, Sc, La, or Ce decreases both ΔHf and SFE in these alloys to varying degrees. 2.08 at.% Sc (2Sc atoms) doping reduces the ΔHf value of baseline Al–Mg–Si alloy by 95.36 %. And 2.08 at.% La (2La atoms) drastically lower the SFE of baseline Al–Mg–Si alloy by 26.8 %, with the best effect. The physical origin of reducing the SFEs of alloys is attributed to elements doping disturbing the lattice orientation and electronic environment of the matrix atoms, changing the flowability of charges during deformation, thereby enhancing the mechanical properties of the Al–Mg–Si-based alloys.
ISSN:22387854
DOI:10.1016/j.jmrt.2025.09.156