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Reconfigurable Tin-Halide Perovskite Resistive Switching Memory for Reservoir Computing System in Braille Code Translator

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Bibliographic Details
Title: Reconfigurable Tin-Halide Perovskite Resistive Switching Memory for Reservoir Computing System in Braille Code Translator
Authors: Dohyung Kim, Hansol Park, Hui Joon Park
Publication Year: 2025
Subject Terms: Biophysics, Medicine, Neuroscience, Biotechnology, Infectious Diseases, Computational Biology, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, reversible filamentary mechanisms, processing temporal information, braille code recognition, modulating switching mechanisms, ag electrode activates, nonvolatile devices makes, switching mode based, applying positive bias, hardware rc system, reservoir computing system, switching mode, positive bias, switching medium, reservoir computing, nonvolatile properties, nonvolatile bipolar, volatile threshold, term potentiation, reservoir layers, reconfigurable tin, reconfigurable rsm
Description: Resistive switching memories (RSMs) have emerged as promising candidates for a reservoir computing (RC) system, which excels in processing temporal information. Their ability to function as either volatile or nonvolatile devices makes them ideal for reservoir and readout layers. However, conventional RSMs require separate devices for these functionalities, complicating integrated RC systems. Here, we introduce tin-halide perovskite as a switching medium and present a reconfigurable RSM with Pt/FASnI 3 /Ag structure that integrates volatile and nonvolatile properties by modulating switching mechanisms. Under a positive bias to the Pt electrode, the device operates in a volatile threshold-switching mode based on space-charge-limited conduction, exhibiting short-term dynamicskey features for reservoir layers. On the other hand, applying positive bias to the Ag electrode activates a nonvolatile bipolar-switching mode, driven by reversible filamentary mechanisms, with long-term potentiation and depression characteristics, suitable for readout layers. Using this reconfigurable RSM, we developed a hardware RC system for Braille code recognition.
Document Type: article in journal/newspaper
Language: unknown
DOI: 10.1021/acsmaterialslett.5c00790.s001
Availability: https://doi.org/10.1021/acsmaterialslett.5c00790.s001
https://figshare.com/articles/journal_contribution/Reconfigurable_Tin-Halide_Perovskite_Resistive_Switching_Memory_for_Reservoir_Computing_System_in_Braille_Code_Translator/29390049
Rights: CC BY-NC 4.0
Accession Number: edsbas.C0707BE3
Database: BASE
Description
Abstract:Resistive switching memories (RSMs) have emerged as promising candidates for a reservoir computing (RC) system, which excels in processing temporal information. Their ability to function as either volatile or nonvolatile devices makes them ideal for reservoir and readout layers. However, conventional RSMs require separate devices for these functionalities, complicating integrated RC systems. Here, we introduce tin-halide perovskite as a switching medium and present a reconfigurable RSM with Pt/FASnI 3 /Ag structure that integrates volatile and nonvolatile properties by modulating switching mechanisms. Under a positive bias to the Pt electrode, the device operates in a volatile threshold-switching mode based on space-charge-limited conduction, exhibiting short-term dynamicskey features for reservoir layers. On the other hand, applying positive bias to the Ag electrode activates a nonvolatile bipolar-switching mode, driven by reversible filamentary mechanisms, with long-term potentiation and depression characteristics, suitable for readout layers. Using this reconfigurable RSM, we developed a hardware RC system for Braille code recognition.
DOI:10.1021/acsmaterialslett.5c00790.s001