Synthesis of ZnO Quantum Dots and Their Applications in UV-Sensitive Low-Voltage Phototransistors
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| Title: | Synthesis of ZnO Quantum Dots and Their Applications in UV-Sensitive Low-Voltage Phototransistors |
|---|---|
| Authors: | Utkarsh Pandey, Sakhi Tiwari, Rajarshi Chakraborty, Sudip K. Batabyal, Bhola Nath Pal |
| Publication Year: | 2025 |
| Subject Terms: | Biophysics, Biochemistry, Medicine, Physiology, Biotechnology, Plasma Physics, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, ray diffraction pattern, external quantum efficiency, demonstrate excellent stability, average crystallite size, zno quantum dots, fabricated zno qd, processed quantum dots, cost solution process, 4 , uv phototransistor device, ∼ 4, processed low, zno qds, ∼ 25, uv sensitivity, uv illumination, subthreshold swing, semiconductor channel |
| Description: | ZnO quantum dots have been synthesized through a low-cost solution process with less complexity. The solution-processed quantum dots (QDs) demonstrate excellent stability and dispersion with an average crystallite size of ∼4.1 nm, which has been determined through the transmission electron microscopy and X-ray diffraction pattern. Furthermore, these ZnO QDs have also been utilized as a semiconductor channel in a solution-processed low-voltage (≤2 V) thin-film transistor (TFT) where ion-conducting LiInSnO 4 thin film has been used as a gate dielectric. The fabricated ZnO QD-based TFT showcases saturation mobility (μ sat ), on/off ratio, and a subthreshold swing (SS) of 0.6 cm 2 /V sec, 10 4 , and 166 mV/decade under dark conditions. Besides, using asymmetric work function source and drain electrodes, the on/off ratio and SS of the devices have been improved that effectively improves the UV sensitivity of the device. Under 1 W m –2 UV illumination, this asymmetric source-drain electrode TFT exhibits impressive UV photosensitivity with an external quantum efficiency of ∼25% which is comparably high for an UV phototransistor device. |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| DOI: | 10.1021/acsanm.5c01947.s001 |
| Availability: | https://doi.org/10.1021/acsanm.5c01947.s001 https://figshare.com/articles/journal_contribution/Synthesis_of_ZnO_Quantum_Dots_and_Their_Applications_in_UV-Sensitive_Low-Voltage_Phototransistors/29430617 |
| Rights: | CC BY-NC 4.0 |
| Accession Number: | edsbas.987F60A |
| Database: | BASE |
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