3D Magnetic Inverse Routine for Single-Segment Magnetic Field Images

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Bibliographic Details
Title: 3D Magnetic Inverse Routine for Single-Segment Magnetic Field Images
Authors: Senthilnath, J., Hao, Chen, Wellstood, F. C.
Source: 2025 IEEE International Conference on Image Processing (ICIP). :2408-2413
Publication Status: Preprint
Publisher Information: IEEE, 2025.
Publication Year: 2025
Subject Terms: FOS: Computer and information sciences, Computer Vision and Pattern Recognition (cs.CV), Image and Video Processing (eess.IV), FOS: Electrical engineering, electronic engineering, information engineering, Image and Video Processing, Computer Vision and Pattern Recognition
Description: In semiconductor packaging, accurately recovering 3D information is crucial for non-destructive testing (NDT) to localize circuit defects. This paper presents a novel approach called the 3D Magnetic Inverse Routine (3D MIR), which leverages Magnetic Field Images (MFI) to retrieve the parameters for the 3D current flow of a single-segment. The 3D MIR integrates a deep learning (DL)-based Convolutional Neural Network (CNN), spatial-physics-based constraints, and optimization techniques. The method operates in three stages: i) The CNN model processes the MFI data to predict ($\ell/z_o$), where $\ell$ is the wire length and $z_o$ is the wire's vertical depth beneath the magnetic sensors and classify segment type ($c$). ii) By leveraging spatial-physics-based constraints, the routine provides initial estimates for the position ($x_o$, $y_o$, $z_o$), length ($\ell$), current ($I$), and current flow direction (positive or negative) of the current segment. iii) An optimizer then adjusts these five parameters ($x_o$, $y_o$, $z_o$, $\ell$, $I$) to minimize the difference between the reconstructed MFI and the actual MFI. The results demonstrate that the 3D MIR method accurately recovers 3D information with high precision, setting a new benchmark for magnetic image reconstruction in semiconductor packaging. This method highlights the potential of combining DL and physics-driven optimization in practical applications.
copyright 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Document Type: Article
DOI: 10.1109/icip55913.2025.11084629
DOI: 10.48550/arxiv.2507.11293
Access URL: http://arxiv.org/abs/2507.11293
Rights: STM Policy #29
arXiv Non-Exclusive Distribution
Accession Number: edsair.doi.dedup.....e69e824f9c79c8c5188ab58bb20139d5
Database: OpenAIRE
Description
Abstract:In semiconductor packaging, accurately recovering 3D information is crucial for non-destructive testing (NDT) to localize circuit defects. This paper presents a novel approach called the 3D Magnetic Inverse Routine (3D MIR), which leverages Magnetic Field Images (MFI) to retrieve the parameters for the 3D current flow of a single-segment. The 3D MIR integrates a deep learning (DL)-based Convolutional Neural Network (CNN), spatial-physics-based constraints, and optimization techniques. The method operates in three stages: i) The CNN model processes the MFI data to predict ($\ell/z_o$), where $\ell$ is the wire length and $z_o$ is the wire's vertical depth beneath the magnetic sensors and classify segment type ($c$). ii) By leveraging spatial-physics-based constraints, the routine provides initial estimates for the position ($x_o$, $y_o$, $z_o$), length ($\ell$), current ($I$), and current flow direction (positive or negative) of the current segment. iii) An optimizer then adjusts these five parameters ($x_o$, $y_o$, $z_o$, $\ell$, $I$) to minimize the difference between the reconstructed MFI and the actual MFI. The results demonstrate that the 3D MIR method accurately recovers 3D information with high precision, setting a new benchmark for magnetic image reconstruction in semiconductor packaging. This method highlights the potential of combining DL and physics-driven optimization in practical applications.<br />copyright 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
DOI:10.1109/icip55913.2025.11084629