Metal oxide ion-gated transistors: A perspective on in operando characterizations and emerging Li-ion-based applications

Uložené v:
Podrobná bibliografia
Názov: Metal oxide ion-gated transistors: A perspective on in operando characterizations and emerging Li-ion-based applications
Autori: Lariel Chagas da Silva Neres, Luan Pereira Camargo, Ramin Karimi Azari, José Ramón Herrera Garza, Francesca Soavi, Martin Schwellberger Barbosa, Clara Santato
Zdroj: MRS Communications. 13:695-703
Informácie o vydavateľovi: Springer Science and Business Media LLC, 2023.
Rok vydania: 2023
Predmety: Computation/computing, Devices, Electrical properties, Energy storage, Neuromorphic, Operando
Popis: In this Prospective, we discuss how ionic media interfaced to metal oxide (MO) semiconducting thin films can modulate their electronic conductivity. From in situ diagnosis tools to monitor the state-of-health of Li-ion batteries, to synaptic transistors where ion diffusive dynamics governs short-term and long-term plasticity, technologies based on ionic medium/MO interfaces are emerging, strongly benefitting from advanced nanoscale resolved scanning probe techniques and computational chemistry
Druh dokumentu: Article
Popis súboru: application/pdf
Jazyk: English
ISSN: 2159-6867
DOI: 10.1557/s43579-023-00437-z
Prístupová URL adresa: https://link.springer.com/article/10.1557/s43579-023-00437-z#Ack1
https://doi.org/10.1557/s43579-023-00437-z
https://hdl.handle.net/11585/952448
Rights: Springer Nature TDM
Prístupové číslo: edsair.doi.dedup.....b51a5a0a68b384c71754fbc180c7428d
Databáza: OpenAIRE
Popis
Abstrakt:In this Prospective, we discuss how ionic media interfaced to metal oxide (MO) semiconducting thin films can modulate their electronic conductivity. From in situ diagnosis tools to monitor the state-of-health of Li-ion batteries, to synaptic transistors where ion diffusive dynamics governs short-term and long-term plasticity, technologies based on ionic medium/MO interfaces are emerging, strongly benefitting from advanced nanoscale resolved scanning probe techniques and computational chemistry
ISSN:21596867
DOI:10.1557/s43579-023-00437-z