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Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.

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Název: Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.
Autoři: Tian, Qi, Ji, Jianli, Fang, Chunlei, Shen, Zhijie, Liu, Yangyang, Du, Chunhua, Sun, Maosong, Lu, Yong, Liu, Ting, Tan, Shuxin, Zhang, Jicai
Zdroj: Journal of Applied Physics; 10/21/2025, Vol. 138 Issue 15, p1-9, 9p
Témata: OPTOELECTRONICS, BORON nitride, THIN films, SUBSTRATES (Materials science), MAGNETRON sputtering
Abstrakt: Boron nitride films are deposited on sapphire substrates with miscut angles (C-plane toward M-direction, 0.1°–4.0°) using radio frequency magnetron sputtering. The deposited films exhibit the characteristic hexagonal boron nitride (h-BN) phase with smooth, dense, and continuous surface morphology. Increasing the substrate miscut angle leads to a progressive deviation of the absorption edge and optical bandgap from those of ideal single-crystalline h-BN. Raman spectroscopy reveals a redshift and broadening of the E2g vibrational mode with increasing miscut, indicating reduced crystallinity and enhanced internal stress. The h-BN film grown on the substrate with a miscut angle of 0.1° shows the most desirable characteristics, including a bandgap of 5.59 eV, minimal residual stress, and the narrowest E2g peak. Metal–semiconductor–metal photodetectors fabricated from the optimized h-BN film demonstrates excellent performance, achieving a photo-to-dark ratio of 217 and a responsivity of 8240 μA/W at 20 V bias. These findings elucidate the influence of substrate miscut on the structural and functional properties of sputtered h-BN films, offering guidance for the controlled growth of high-performance BN-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
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Abstrakt:Boron nitride films are deposited on sapphire substrates with miscut angles (C-plane toward M-direction, 0.1°–4.0°) using radio frequency magnetron sputtering. The deposited films exhibit the characteristic hexagonal boron nitride (h-BN) phase with smooth, dense, and continuous surface morphology. Increasing the substrate miscut angle leads to a progressive deviation of the absorption edge and optical bandgap from those of ideal single-crystalline h-BN. Raman spectroscopy reveals a redshift and broadening of the E<subscript>2g</subscript> vibrational mode with increasing miscut, indicating reduced crystallinity and enhanced internal stress. The h-BN film grown on the substrate with a miscut angle of 0.1° shows the most desirable characteristics, including a bandgap of 5.59 eV, minimal residual stress, and the narrowest E<subscript>2g</subscript> peak. Metal–semiconductor–metal photodetectors fabricated from the optimized h-BN film demonstrates excellent performance, achieving a photo-to-dark ratio of 217 and a responsivity of 8240 μA/W at 20 V bias. These findings elucidate the influence of substrate miscut on the structural and functional properties of sputtered h-BN films, offering guidance for the controlled growth of high-performance BN-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
ISSN:00218979
DOI:10.1063/5.0300499