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Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.

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Title: Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.
Authors: Tian, Qi, Ji, Jianli, Fang, Chunlei, Shen, Zhijie, Liu, Yangyang, Du, Chunhua, Sun, Maosong, Lu, Yong, Liu, Ting, Tan, Shuxin, Zhang, Jicai
Source: Journal of Applied Physics; 10/21/2025, Vol. 138 Issue 15, p1-9, 9p
Subject Terms: OPTOELECTRONICS, BORON nitride, THIN films, SUBSTRATES (Materials science), MAGNETRON sputtering
Abstract: Boron nitride films are deposited on sapphire substrates with miscut angles (C-plane toward M-direction, 0.1°–4.0°) using radio frequency magnetron sputtering. The deposited films exhibit the characteristic hexagonal boron nitride (h-BN) phase with smooth, dense, and continuous surface morphology. Increasing the substrate miscut angle leads to a progressive deviation of the absorption edge and optical bandgap from those of ideal single-crystalline h-BN. Raman spectroscopy reveals a redshift and broadening of the E2g vibrational mode with increasing miscut, indicating reduced crystallinity and enhanced internal stress. The h-BN film grown on the substrate with a miscut angle of 0.1° shows the most desirable characteristics, including a bandgap of 5.59 eV, minimal residual stress, and the narrowest E2g peak. Metal–semiconductor–metal photodetectors fabricated from the optimized h-BN film demonstrates excellent performance, achieving a photo-to-dark ratio of 217 and a responsivity of 8240 μA/W at 20 V bias. These findings elucidate the influence of substrate miscut on the structural and functional properties of sputtered h-BN films, offering guidance for the controlled growth of high-performance BN-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Tian%2C+Qi%22">Tian, Qi</searchLink><br /><searchLink fieldCode="AR" term="%22Ji%2C+Jianli%22">Ji, Jianli</searchLink><br /><searchLink fieldCode="AR" term="%22Fang%2C+Chunlei%22">Fang, Chunlei</searchLink><br /><searchLink fieldCode="AR" term="%22Shen%2C+Zhijie%22">Shen, Zhijie</searchLink><br /><searchLink fieldCode="AR" term="%22Liu%2C+Yangyang%22">Liu, Yangyang</searchLink><br /><searchLink fieldCode="AR" term="%22Du%2C+Chunhua%22">Du, Chunhua</searchLink><br /><searchLink fieldCode="AR" term="%22Sun%2C+Maosong%22">Sun, Maosong</searchLink><br /><searchLink fieldCode="AR" term="%22Lu%2C+Yong%22">Lu, Yong</searchLink><br /><searchLink fieldCode="AR" term="%22Liu%2C+Ting%22">Liu, Ting</searchLink><br /><searchLink fieldCode="AR" term="%22Tan%2C+Shuxin%22">Tan, Shuxin</searchLink><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jicai%22">Zhang, Jicai</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: Journal of Applied Physics; 10/21/2025, Vol. 138 Issue 15, p1-9, 9p
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22OPTOELECTRONICS%22">OPTOELECTRONICS</searchLink><br /><searchLink fieldCode="DE" term="%22BORON+nitride%22">BORON nitride</searchLink><br /><searchLink fieldCode="DE" term="%22THIN+films%22">THIN films</searchLink><br /><searchLink fieldCode="DE" term="%22SUBSTRATES+%28Materials+science%29%22">SUBSTRATES (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22MAGNETRON+sputtering%22">MAGNETRON sputtering</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Boron nitride films are deposited on sapphire substrates with miscut angles (C-plane toward M-direction, 0.1°–4.0°) using radio frequency magnetron sputtering. The deposited films exhibit the characteristic hexagonal boron nitride (h-BN) phase with smooth, dense, and continuous surface morphology. Increasing the substrate miscut angle leads to a progressive deviation of the absorption edge and optical bandgap from those of ideal single-crystalline h-BN. Raman spectroscopy reveals a redshift and broadening of the E<subscript>2g</subscript> vibrational mode with increasing miscut, indicating reduced crystallinity and enhanced internal stress. The h-BN film grown on the substrate with a miscut angle of 0.1° shows the most desirable characteristics, including a bandgap of 5.59 eV, minimal residual stress, and the narrowest E<subscript>2g</subscript> peak. Metal–semiconductor–metal photodetectors fabricated from the optimized h-BN film demonstrates excellent performance, achieving a photo-to-dark ratio of 217 and a responsivity of 8240 μA/W at 20 V bias. These findings elucidate the influence of substrate miscut on the structural and functional properties of sputtered h-BN films, offering guidance for the controlled growth of high-performance BN-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
– Name: Abstract
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0300499
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Subjects:
      – SubjectFull: OPTOELECTRONICS
        Type: general
      – SubjectFull: BORON nitride
        Type: general
      – SubjectFull: THIN films
        Type: general
      – SubjectFull: SUBSTRATES (Materials science)
        Type: general
      – SubjectFull: MAGNETRON sputtering
        Type: general
    Titles:
      – TitleFull: Substrate-dependent growth and optoelectronic properties of sputtered hexagonal boron nitride films.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tian, Qi
      – PersonEntity:
          Name:
            NameFull: Ji, Jianli
      – PersonEntity:
          Name:
            NameFull: Fang, Chunlei
      – PersonEntity:
          Name:
            NameFull: Shen, Zhijie
      – PersonEntity:
          Name:
            NameFull: Liu, Yangyang
      – PersonEntity:
          Name:
            NameFull: Du, Chunhua
      – PersonEntity:
          Name:
            NameFull: Sun, Maosong
      – PersonEntity:
          Name:
            NameFull: Lu, Yong
      – PersonEntity:
          Name:
            NameFull: Liu, Ting
      – PersonEntity:
          Name:
            NameFull: Tan, Shuxin
      – PersonEntity:
          Name:
            NameFull: Zhang, Jicai
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 10
              Text: 10/21/2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 00218979
          Numbering:
            – Type: volume
              Value: 138
            – Type: issue
              Value: 15
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
ResultId 1