Loo, R., Beggiato, M., Shimura, Y., Rassoul, N., Vanherle, W., Seidel, F., . . . Langer, R. (2025). Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications. Journal of Applied Physics, 138(5), 1-13. https://doi.org/10.1063/5.0260979
Citace podle Chicago (17th ed.)Loo, R., et al. "Epitaxial Growth of Up to 120× {Si0.8Ge0.2/Si} Bilayers in View of Three Dimensional Dynamic Random Access Memory Applications." Journal of Applied Physics 138, no. 5 (2025): 1-13. https://doi.org/10.1063/5.0260979.
Citace podle MLA (9th ed.)Loo, R., et al. "Epitaxial Growth of Up to 120× {Si0.8Ge0.2/Si} Bilayers in View of Three Dimensional Dynamic Random Access Memory Applications." Journal of Applied Physics, vol. 138, no. 5, 2025, pp. 1-13, https://doi.org/10.1063/5.0260979.