Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition. - Hidaka, Atsuki; Tokai, Yuuta; Narita, Tomoya; Matsuura, Hideharu; Eto, Kazuma; Ji, Shiyang; Kojima, Kazutoshi; Kato, Tomohisa; Yoshida, Sadafumi (Japanese Journal of Applied Physics, 2025)