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Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study.

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Title: Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study.
Authors: Salcedo, Guillermo A., Islam, Ahmad E., Reichley, Elizabeth, Dietz, Michael, Schubert-Kabban, Christine M., Leedy, Kevin D., Back, Tyson C., Wang, Weisong, Green, Andrew, Wolfe, Timothy, Sattler, James M.
Source: Journal of Applied Physics; 3/28/2024, Vol. 135 Issue 12, p1-8, 8p
Subject Terms: HAFNIUM oxide films, FERROELECTRICITY, HYDROFLUORIC acid, ZIRCONIUM oxide, HAFNIUM oxide
Abstract: Ferroelectricity in hafnium zirconium oxide (Hf1 − xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1 − xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1 − xZrxO2. This work involved the fabrication and characterization of 36 samples containing multiple sets of metal-ferroelectric-metal capacitors while varying x (0.26, 0.48, and 0.57), tf (10 and 19 nm), and Ta (300, 400, 500, and 600 ° C). In addition to the well-understood effects of x and Ta on the ferroelectricity of Hf1 − xZrxO2, the statistical analysis showed that thicker Hf1 − xZrxO2 films or films with higher x require lower Ta to crystallize and demonstrated that there is no statistical difference between samples annealed to 500 and 600 ° C, thus suggesting that most films fully crystallize with Ta ∼ 500 ° C for 60 s. Our model explains 95% of the variability in the Pr data for the films fabricated, presents the estimates of the phase composition of the film, and provides a starting point for selecting fabrication parameters when a specific Pr is desired. [ABSTRACT FROM AUTHOR]
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Abstract:Ferroelectricity in hafnium zirconium oxide (Hf<subscript>1 − x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript>) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf<subscript>1 − x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript> require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (t<subscript>f</subscript>), and annealing temperature (T<subscript>a</subscript>) with the remanent polarization (P<subscript>r</subscript>) in tungsten (W)-capped Hf<subscript>1 − x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript>. This work involved the fabrication and characterization of 36 samples containing multiple sets of metal-ferroelectric-metal capacitors while varying x (0.26, 0.48, and 0.57), t<subscript>f</subscript> (10 and 19 nm), and T<subscript>a</subscript> (300, 400, 500, and 600 ° C). In addition to the well-understood effects of x and T<subscript>a</subscript> on the ferroelectricity of Hf<subscript>1 − x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript>, the statistical analysis showed that thicker Hf<subscript>1 − x</subscript>Zr<subscript>x</subscript>O<subscript>2</subscript> films or films with higher x require lower T<subscript>a</subscript> to crystallize and demonstrated that there is no statistical difference between samples annealed to 500 and 600 ° C, thus suggesting that most films fully crystallize with T<subscript>a</subscript> ∼ 500 ° C for 60 s. Our model explains 95% of the variability in the P<subscript>r</subscript> data for the films fabricated, presents the estimates of the phase composition of the film, and provides a starting point for selecting fabrication parameters when a specific P<subscript>r</subscript> is desired. [ABSTRACT FROM AUTHOR]
ISSN:00218979
DOI:10.1063/5.0191420