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Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

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Titel: Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.
Autoren: Yin, Chenyu, Gao, Tianzhi, Wei, Hao, Chen, Yaolin, Liu, Hongxia
Quelle: Micromachines; Aug2023, Vol. 14 Issue 8, p1620, 13p
Schlagwörter: STATIC random access memory, SINGLE event effects
Abstract: In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit's upset threshold and critical charge decreased by 15.4% and 23.5%, respectively. This indicates that the charge sharing effect exacerbates the single event effects. By analyzing the incident conditions of two different incident radius particles, it is concluded that the particles with a smaller incident radius have a worse impact on the SRAM circuit, and are more likely to cause the single event upset in the circuit, indicating that the ionization distribution generated by the incident particle affects the charge collection. [ABSTRACT FROM AUTHOR]
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  Label: Title
  Group: Ti
  Data: Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Yin%2C+Chenyu%22">Yin, Chenyu</searchLink><br /><searchLink fieldCode="AR" term="%22Gao%2C+Tianzhi%22">Gao, Tianzhi</searchLink><br /><searchLink fieldCode="AR" term="%22Wei%2C+Hao%22">Wei, Hao</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+Yaolin%22">Chen, Yaolin</searchLink><br /><searchLink fieldCode="AR" term="%22Liu%2C+Hongxia%22">Liu, Hongxia</searchLink>
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  Label: Source
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  Data: Micromachines; Aug2023, Vol. 14 Issue 8, p1620, 13p
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22STATIC+random+access+memory%22">STATIC random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22SINGLE+event+effects%22">SINGLE event effects</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit's upset threshold and critical charge decreased by 15.4% and 23.5%, respectively. This indicates that the charge sharing effect exacerbates the single event effects. By analyzing the incident conditions of two different incident radius particles, it is concluded that the particles with a smaller incident radius have a worse impact on the SRAM circuit, and are more likely to cause the single event upset in the circuit, indicating that the ionization distribution generated by the incident particle affects the charge collection. [ABSTRACT FROM AUTHOR]
– Name: Abstract
  Label:
  Group: Ab
  Data: <i>Copyright of Micromachines is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/mi14081620
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 13
        StartPage: 1620
    Subjects:
      – SubjectFull: STATIC random access memory
        Type: general
      – SubjectFull: SINGLE event effects
        Type: general
    Titles:
      – TitleFull: Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Yin, Chenyu
      – PersonEntity:
          Name:
            NameFull: Gao, Tianzhi
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            NameFull: Wei, Hao
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            NameFull: Chen, Yaolin
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            NameFull: Liu, Hongxia
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          Dates:
            – D: 01
              M: 08
              Text: Aug2023
              Type: published
              Y: 2023
          Identifiers:
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              Value: 2072666X
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              Value: 14
            – Type: issue
              Value: 8
          Titles:
            – TitleFull: Micromachines
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