Yin, C., Gao, T., Wei, H., Chen, Y., & Liu, H. (2023). Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. Micromachines, 14(8), 1620-1632. https://doi.org/10.3390/mi14081620
Citace podle Chicago (17th ed.)Yin, Chenyu, Tianzhi Gao, Hao Wei, Yaolin Chen, a Hongxia Liu. "Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect." Micromachines 14, no. 8 (2023): 1620-1632. https://doi.org/10.3390/mi14081620.
Citace podle MLA (9th ed.)Yin, Chenyu, et al. "Single Event Upset Study of 22 Nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect." Micromachines, vol. 14, no. 8, 2023, pp. 1620-1632, https://doi.org/10.3390/mi14081620.