Bibliographische Detailangaben
| Titel: |
Evaluation of Bi-CAM and TCAM cells with MTJ for low power and high-speed using 180 NM technology. |
| Autoren: |
Kumari, Anjali, Gopal, Girdhar, Johar, Arun Kishor, Mishra, Sudhir Kumar, Tripathi, Ashutosh, Varma, Tarun |
| Quelle: |
AIP Conference Proceedings; 2023, Vol. 2782 Issue 1, p1-10, 10p |
| Schlagwörter: |
MAGNETIC tunnelling, ASSOCIATIVE storage, MONTE Carlo method |
| Abstract: |
TCAM (Ternary content-addressable memory) works for high-speed search in single clock cycle. In TCAM, memories are searched by data rather than by an address and a memory address among matches is selected while in static random-access memory searches by address and access the data at that address. TCAM search operation is faster than SRAM. Limitations of TCAM are relatively slow access time, low scalability, complex circuitry, low storage density, and very expensive. Several content addressable memories (CAM) and Ternary content addressable memory based on Magnetic Tunnel Junction (MTJ) are proposed. CAM cells and TCAM cells on Cadence Virtuoso with Monte Carlo simulation for 180nm technology are successfully implemented and proposed. [ABSTRACT FROM AUTHOR] |
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| Datenbank: |
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