Namba, K., & Lombardi, F. (2019). Coding for Write Latency Reduction in a Multi-Level Cell (MLC) Phase Change Memory (PCM). IEEE Transactions on Computers, 68(2), 301-306. https://doi.org/10.1109/TC.2018.2868928
Chicago-Zitierstil (17. Ausg.)Namba, Kazuteru, und Fabrizio Lombardi. "Coding for Write Latency Reduction in a Multi-Level Cell (MLC) Phase Change Memory (PCM)." IEEE Transactions on Computers 68, no. 2 (2019): 301-306. https://doi.org/10.1109/TC.2018.2868928.
MLA-Zitierstil (9. Ausg.)Namba, Kazuteru, und Fabrizio Lombardi. "Coding for Write Latency Reduction in a Multi-Level Cell (MLC) Phase Change Memory (PCM)." IEEE Transactions on Computers, vol. 68, no. 2, 2019, pp. 301-306, https://doi.org/10.1109/TC.2018.2868928.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.