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(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography

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Title: (100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography
Authors: Eguchi, Masanori1 sa5570@cc.saga-u.ac.jp, Sato, Makoto2, Saha, Niloy Chandra2, Oishi, Toshiyuki2, Rao, Badari Narayana3, Lin, Chia-Hung3, Sasaki, Kohei3, Kasu, Makoto2
Source: Journal of Applied Physics. 11/14/2025, Vol. 138 Issue 18, p1-7. 7p.
Subject Terms: *MICROCRACKS, *GALLIUM compounds, *STRAY currents, *SCHOTTKY barrier diodes, *VAPOR phase epitaxial growth, *STACKING faults (Crystals)
Abstract: This study reports that microcracks on a halide vapor-phase epitaxy (HVPE)-deposited (001) β-Ga2O3 epitaxial layer are killer defects in Schottky barrier diodes (SBDs). The microcracks are (100) cracks with a typical length of 1.7–5.1 μm and depth of 0.48–2.2 μm. They are accompanied by (111) or (1 1 ¯ 1) stacking faults and dislocation networks, causing a large reverse-leakage-current flow in SBDs. The stacking faults were generated during HVPE growth. The microcracks were considered to be formed by tensile strain caused by the difference in thermal expansion coefficients between the [100] and [010] directions during growth, annealing, etc. The electric field at the bottom of the microcrack was 6.0 MV/cm at −80 V, which resulted in a reverse leakage current in the SBD. [ABSTRACT FROM AUTHOR]
Database: Academic Search Index
Description
Abstract:This study reports that microcracks on a halide vapor-phase epitaxy (HVPE)-deposited (001) β-Ga2O3 epitaxial layer are killer defects in Schottky barrier diodes (SBDs). The microcracks are (100) cracks with a typical length of 1.7–5.1 μm and depth of 0.48–2.2 μm. They are accompanied by (111) or (1 1 ¯ 1) stacking faults and dislocation networks, causing a large reverse-leakage-current flow in SBDs. The stacking faults were generated during HVPE growth. The microcracks were considered to be formed by tensile strain caused by the difference in thermal expansion coefficients between the [100] and [010] directions during growth, annealing, etc. The electric field at the bottom of the microcrack was 6.0 MV/cm at −80 V, which resulted in a reverse leakage current in the SBD. [ABSTRACT FROM AUTHOR]
ISSN:00218979
DOI:10.1063/5.0294493