(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography - Eguchi, Masanori; Sato, Makoto; Saha, Niloy Chandra; Oishi, Toshiyuki; Rao, Badari Narayana; Lin, Chia-Hung; Sasaki, Kohei; Kasu, Makoto (Journal of Applied Physics, 2025)