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Fabrication and physical properties of the zero-gap half-metallic Cr3Si film with a DO3 structure.

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Názov: Fabrication and physical properties of the zero-gap half-metallic Cr3Si film with a DO3 structure.
Autori: Liu, Chunhai1, Dai, Xuefang1 xuefangdai@126.com, Wang, Liying2, Si, Yuhao1, Liu, Cong1, Jin, Lei1, Liu, Ying1, Zhang, Xiaoming1, Liu, Guodong1 gdliu1978@126.com
Zdroj: Journal of Applied Physics. 8/21/2025, Vol. 138 Issue 7, p1-10. 10p.
Predmety: *CHROMIUM silicide, *MAGNETRON sputtering, *THIN films, *MAGNETIZATION, *MAGNETORESISTANCE, *HETEROJUNCTIONS
Abstrakt: This study demonstrates the synthesis of single-phase Cr3Si thin films featuring a highly ordered DO3 structure via magnetron sputtering. The structural, magnetic, and electrical transport properties of the films were systematically investigated. Experimental results reveal that the Cr3Si film crystallizes with a high degree of atomic order, achieving a saturation magnetization that is very consistent with the theoretical value of 2 μB obtained by first-principles calculations. The Cr3Si film manifests a Curie temperature of 350 K, substantially exceeding ambient conditions, thereby enabling robust room-temperature spintronic functionality. The linear magnetoresistance, crossover of magnetoresistance, and almost temperature-independent carrier concentration are observed and further confirm the zero-gap half-metallic nature of the Cr3Si film. Importantly, the introduction of a Cr buffer layer facilitates the growth of the Cr3Si film in the DO3 structure with higher atomic order and reduces the crystallization temperature. The epitaxial interface of Cr/Cr3Si does not affect the electron spin polarizability of the Cr3Si layer, preserving its zero-gap half-metallic properties. The Cr buffer layer maintains its intrinsic antiferromagnetic ordering, thereby establishing a ferromagnetic/antiferromagnetic heterojunction with the Cr3Si layer. [ABSTRACT FROM AUTHOR]
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  Label: Title
  Group: Ti
  Data: Fabrication and physical properties of the zero-gap half-metallic Cr<subscript>3</subscript>Si film with a DO<subscript>3</subscript> structure.
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Chunhai%22">Liu, Chunhai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dai%2C+Xuefang%22">Dai, Xuefang</searchLink><relatesTo>1</relatesTo><i> xuefangdai@126.com</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Liying%22">Wang, Liying</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Si%2C+Yuhao%22">Si, Yuhao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Cong%22">Liu, Cong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jin%2C+Lei%22">Jin, Lei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Ying%22">Liu, Ying</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xiaoming%22">Zhang, Xiaoming</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+Guodong%22">Liu, Guodong</searchLink><relatesTo>1</relatesTo><i> gdliu1978@126.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 8/21/2025, Vol. 138 Issue 7, p1-10. 10p.
– Name: Subject
  Label: Subject Terms
  Group: Su
  Data: *<searchLink fieldCode="DE" term="%22CHROMIUM+silicide%22">CHROMIUM silicide</searchLink><br />*<searchLink fieldCode="DE" term="%22MAGNETRON+sputtering%22">MAGNETRON sputtering</searchLink><br />*<searchLink fieldCode="DE" term="%22THIN+films%22">THIN films</searchLink><br />*<searchLink fieldCode="DE" term="%22MAGNETIZATION%22">MAGNETIZATION</searchLink><br />*<searchLink fieldCode="DE" term="%22MAGNETORESISTANCE%22">MAGNETORESISTANCE</searchLink><br />*<searchLink fieldCode="DE" term="%22HETEROJUNCTIONS%22">HETEROJUNCTIONS</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study demonstrates the synthesis of single-phase Cr3Si thin films featuring a highly ordered DO3 structure via magnetron sputtering. The structural, magnetic, and electrical transport properties of the films were systematically investigated. Experimental results reveal that the Cr3Si film crystallizes with a high degree of atomic order, achieving a saturation magnetization that is very consistent with the theoretical value of 2 μB obtained by first-principles calculations. The Cr3Si film manifests a Curie temperature of 350 K, substantially exceeding ambient conditions, thereby enabling robust room-temperature spintronic functionality. The linear magnetoresistance, crossover of magnetoresistance, and almost temperature-independent carrier concentration are observed and further confirm the zero-gap half-metallic nature of the Cr3Si film. Importantly, the introduction of a Cr buffer layer facilitates the growth of the Cr3Si film in the DO3 structure with higher atomic order and reduces the crystallization temperature. The epitaxial interface of Cr/Cr3Si does not affect the electron spin polarizability of the Cr3Si layer, preserving its zero-gap half-metallic properties. The Cr buffer layer maintains its intrinsic antiferromagnetic ordering, thereby establishing a ferromagnetic/antiferromagnetic heterojunction with the Cr3Si layer. [ABSTRACT FROM AUTHOR]
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      – Type: doi
        Value: 10.1063/5.0287450
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Subjects:
      – SubjectFull: CHROMIUM silicide
        Type: general
      – SubjectFull: MAGNETRON sputtering
        Type: general
      – SubjectFull: THIN films
        Type: general
      – SubjectFull: MAGNETIZATION
        Type: general
      – SubjectFull: MAGNETORESISTANCE
        Type: general
      – SubjectFull: HETEROJUNCTIONS
        Type: general
    Titles:
      – TitleFull: Fabrication and physical properties of the zero-gap half-metallic Cr3Si film with a DO3 structure.
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            NameFull: Liu, Chunhai
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            – D: 21
              M: 08
              Text: 8/21/2025
              Type: published
              Y: 2025
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              Value: 138
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