Suchergebnisse - "unipolar transistors"

Elektronika 1

Autoren: Tudic, Vladimir

Schlagwörter: amplifiers with transistors, Poluvodiči, hetero spojevi, p-n connection, pojačala s tranzistorima, hetero connections, semiconductors, p-n spoj, bipolar and unipolar transistors, bipolarni i unipolarni tranzistori, energetski dijagram, energy diagram

Zugangs-URL: https://www.bib.irb.hr/1160838
https://digitalna.nsk.hr/pb/?object=info&id=607560

Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation

Autoren: Jiang XW Li SS Xia JB et al.

Schlagwörter: Field-effect Transistors, Semiconductor-devices, Silicon Devices, Monte-carlo, Mosfets, Nanotransistors, Approximation, Equations, Design, Models, 半导体物理, semiconductors, mathematics, chemical equations, simulation models, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors

Relation: JOURNAL OF APPLIED PHYSICS; Jiang XW; Li SS; Xia JB; Wang LW.Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.54503; http://ir.semi.ac.cn/handle/172111/20891

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20891

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Autoren: Lv YJ Lin ZJ Corrigan TD et al.

Schlagwörter: Field-effect Transistors, Gan, Dependence, Contacts, States, Ni, 半导体材料, dependency, electric contacts, cantons, nickel, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: JOURNAL OF APPLIED PHYSICS; Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics,JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74512; http://ir.semi.ac.cn/handle/172111/21247

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21247

Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures

Autoren: Liu GP Wu J Lu YW et al.

Schlagwörter: Field-effect Transistors, Interface Roughness, Quantum-wells, Mobility, Heterojunction, Transport, Model, 半导体材料, quantum wells, migration, internal, transportation, example, modeling, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit

Relation: JOURNAL OF APPLIED PHYSICS; Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG.Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures,JOURNAL OF APPLIED PHYSICS,2011,110(2):23705; http://ir.semi.ac.cn/handle/172111/22801

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22801

The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure

Autoren: Bi Y Wang XL Xiao HL et al.

Schlagwörter: Algan/gan/ingan/gan Dh-hemts, Field-effect Transistors, Algan/gan, Polarization, Passivation, Hfets, Ghz, 半导体材料, electromagnetic wave polarisation, passivity, oxidation, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS; Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ.The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure,EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):10102; http://ir.semi.ac.cn/handle/172111/22663

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22663

The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure

Autoren: Bi Y Wang XL Yang CB et al.

Schlagwörter: 2-dimensional Electron-gas, Algan/gan/ingan/gan Dh-hemts, Millimeter-wave Applications, Field-effect Transistors, Heterojunction Fets, Heterostructures, Passivation, Confinement, Performance, Barriers, 半导体材料, passivity, oxidation, imprisonment, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit

Relation: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING; Bi Y; Wang XL; Yang CB; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ.The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(4):1211-1216; http://ir.semi.ac.cn/handle/172111/22573

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22573

A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

Autoren: Jiang, XW Deng, HX Luo, JW et al.

Schlagwörter: Dopant Fluctuation, Linear Combination Of Bulk Band (Lcbb), Mosfet, Quantum Mechanical, Threshold, 3-d, 半导体物理, metal oxide semiconductor field-effect transistors, field-effect transistors, finfet, metal-oxide-semiconductor field effect transistors, mos transistors, nmos transistors, pmos transistors, vmos transistors, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES; Jiang, XW; Deng, HX; Luo, JW; Li, SS; Wang, LW .A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs ,IEEE TRANSACTIONS ON ELECTRON DEVICES,2008 ,55(7): 1720-1726; http://ir.semi.ac.cn/handle/172111/6582

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/6582

Tuning of plasmon propagation in two-dimensional electrons

Autoren: Li C Wu XG Li C Chinese Acad Sci SKLSM Inst Semicond Beijing 100083 Peoples R China. E-mail Address: lichao@semi.ac.cn

Schlagwörter: Field Effect Transistors, Plasmons, Semiconductor Heterojunctions, Spin-orbit Interactions, Two-dimensional Electron Gas, 半导体物理, field-effect transistors, dispersion relations, semiconductors--junctions, electron gas, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets

Relation: APPLIED PHYSICS LETTERS; Li C; Wu XG .Tuning of plasmon propagation in two-dimensional electrons ,APPLIED PHYSICS LETTERS,2008 ,93(25):Art. No. 251501; http://ir.semi.ac.cn/handle/172111/7443

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/7443

Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Autoren: Cao GH (Cao Guohua) Qin DS (Qin Dashan) Cao JS (Cao Junsong) et al.

Schlagwörter: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: JOURNAL OF APPLIED PHYSICS; Cao, GH (Cao, Guohua); Qin, DS (Qin, Dashan); Cao, JS (Cao, Junsong); Guan, M (Guan, Min); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) .Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection ,JOURNAL OF APPLIED PHYSICS,JUN 15 2007,101 (12):Art.No.124507; http://ir.semi.ac.cn/handle/172111/9374

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/9374

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Autoren: Zhao J (Zhao, Jianzhi) Lin Z (Lin, Zhaojun) Corrigan TD (Corrigan, Timothy D.) et al.

Schlagwörter: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: APPLIED PHYSICS LETTERS; Zhao, J (Zhao, Jianzhi); Lin, Z (Lin, Zhaojun); Corrigan, TD (Corrigan, Timothy D.); Wang, Z (Wang, Zhen); You, Z (You, Zhidong); Wang, Z (Wang, Zhanguo) .Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures ,APPLIED PHYSICS LETTERS,OCT 22 2007,91 (17):Art.No.173507; http://ir.semi.ac.cn/handle/172111/9214

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/9214

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

Autoren: Han XX Li DB Yuan HR et al.

Schlagwörter: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: PHYSICA STATUS SOLIDI B-BASIC RESEARCH; Han, XX; Li, DB; Yuan, HR; Sun, XH; Liu, XL; Wang, XH; Zhu, QS; Wang, ZG .Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,NOV 2004,241 (13):3000-3008; http://ir.semi.ac.cn/handle/172111/7912

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/7912

Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells

Autoren: Wan SP Xia JB Chang K et al.

Schlagwörter: Field-effect Transistors, Recombination Dynamics, Width Dependence, Gan, Excitons, Absorption, Spectra, Semiconductors, Luminescence, Constants, 半导体物理, infrared spectra, spectrum analysis, avogadro constant, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit

Relation: JOURNAL OF APPLIED PHYSICS; Wan SP; Xia JB; Chang K .Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells ,JOURNAL OF APPLIED PHYSICS,2001 ,90(12):6210-6216; http://ir.semi.ac.cn/handle/172111/12032

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/12032

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

Autoren: Zhang JP Sun DZ Wang XL et al.

Schlagwörter: Field-effect Transistors, Luminescence Spectra, Absorption, Charge, 半导体物理, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors, 衰减, attenuation

Relation: APPLIED PHYSICS LETTERS; Zhang JP; Sun DZ; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure ,APPLIED PHYSICS LETTERS,1998,73(17):2471-2472; http://ir.semi.ac.cn/handle/172111/13084

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/13084

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

Autoren: Wang, N Li, N Liu, ZL et al.

Schlagwörter: Soi, Mosfet, 微电子学, semiconductor-insulator boundaries, metal oxide semiconductor field-effect transistors, field-effect transistors, insulator-semiconductor boundaries, semiconductor-on-insulator, silicon-on-insulator, finfet, metal-oxide-semiconductor field effect transistors, mos transistors, nmos transistors, pmos transistors, vmos transistors, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors

Relation: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY; Wang, N;Li, N;Liu, ZL;Yu, F;Li, GH.Fabrication of improved FD SOIMOSFETs for suppressing edge effect .见：IEEE .2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-4: 231-234; http://ir.semi.ac.cn/handle/172111/8270

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/8270

Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes

Autoren: 张营营 王奉超 赵亚溥 et al.

Schlagwörter: Silicon Monatomic Chain, Size-selective Encapsulation, Electronic Transport Properties, Negative Differential Resistance, Transmission Spectrum, Field-effect Transistors, Single, Nanowires, Simulations, 交叉与边缘领域的力学::物理力学, 二类/Q2, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: COMPUTATIONAL MATERIALS SCIENCE; Zhang YY,Wang FC,Zhao YP. Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes[J]. COMPUTATIONAL MATERIALS SCIENCE,2012,62:87-92.; http://dspace.imech.ac.cn/handle/311007/46713; http://dx.doi.org/10.1016/j.commatsci.2012.04.050

Verfügbarkeit: http://dspace.imech.ac.cn/handle/311007/46713
https://doi.org/10.1016/j.commatsci.2012.04.050

Structures and Energetics of Silver and Gold Nanoparticles

Autoren: Wang, BY Liu, MX Wang, YT et al.

Schlagwörter: Field-effect Transistors, Pbse Nanocrystal Solids, Cdse Nanocrystals, Twinned Particles, Block-copolymers, Au Nanoclusters, Solar-cells, Clusters, Films, Superlattices, Physics, block copolymers, solar cells, solar generators, photography--films, finite volume method, metallic superlattices, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors

Relation: JOURNAL OF PHYSICAL CHEMISTRY C; Wang, BY; Liu, MX; Wang, YT; Chen, XS.Structures and Energetics of Silver and Gold Nanoparticles,JOURNAL OF PHYSICAL CHEMISTRY C,2011,115(23):11374-11381; http://ir.itp.ac.cn/handle/311006/14332; http://dx.doi.org/10.1021/jp201023x

Verfügbarkeit: http://ir.itp.ac.cn/handle/311006/14332
https://doi.org/10.1021/jp201023x

大功率半导体激光器驱动电源设计

Autoren: 卢凯 刘百玉

Weitere Verfasser: 卢凯 刘百玉

Schlagwörter: 半导体激光器, 电流负反馈, 恒流源, Mosfet, 单片机, 电子、电信技术, semiconductor laser, [constant] current source, Metal oxide semiconductor field-effect transistors, Field-effect transistors, FinFET, metal-oxide-semiconductor field effect transistors, MOS transistors, NMOS transistors, PMOS transistors, VMOS transistors, Unipolar transistors, Metal oxide semiconductors, field effect transistor circuits, field effect transistors, FET, HEMT circuits, MODFET circuits, JFET circuits, junction gate field effect transistors, JFET, MESFET circuits, MOSFET circuits, power field effect transistors, power FET

Relation: 卢凯.大功率半导体激光器驱动电源设计[硕士].北京.中国科学院研究生院.2012; http://ir.opt.ac.cn/handle/181661/18620

Verfügbarkeit: http://ir.opt.ac.cn/handle/181661/18620

多狭缝条纹相机电子控制系统的研制

Autoren: 杨威 赵宝升

Weitere Verfasser: 杨威 赵宝升

Schlagwörter: 非扫描三维成像激光雷达, 多狭缝条纹相机电子控制系统, Mosfet, 快门电路, 扫描电路, 物理电子学, Metal oxide semiconductor field-effect transistors, Field-effect transistors, FinFET, metal-oxide-semiconductor field effect transistors, MOS transistors, NMOS transistors, PMOS transistors, VMOS transistors, Unipolar transistors, Metal oxide semiconductors, field effect transistor circuits, field effect transistors, FET, HEMT circuits, MODFET circuits, JFET circuits, junction gate field effect transistors, JFET, MESFET circuits, MOSFET circuits, power field effect transistors, power FET, static induction transistors, SIT

Relation: 杨威.多狭缝条纹相机电子控制系统的研制 .[硕士学位论文].中国科学院西安光学精密机械研究所.2008; http://ir.opt.ac.cn/handle/181661/12220

Verfügbarkeit: http://ir.opt.ac.cn/handle/181661/12220

Simulace polymorfních obvodů na úrovni tranzistorů ; Transistor-Level Simulations of Polymorphic Circuits

Autoren: Kropáček, Jan Sekanina, Lukáš Růžička, Richard

Weitere Verfasser: Kropáček, Jan Sekanina, Lukáš Růžička, Richard

Schlagwörter: Polymorfní obvod, unipolární tranzistor, OrCAD PSpice, simulace, Polymorfic circuit, unipolar transistors, simulation

Dateibeschreibung: text/html

Relation: KROPÁČEK, J. Simulace polymorfních obvodů na úrovni tranzistorů [online]. Brno: Vysoké učení technické v Brně. Fakulta informačních technologií. .; 15156; http://hdl.handle.net/11012/53028

Verfügbarkeit: http://hdl.handle.net/11012/53028

Carrier-Type Modulation and Mobility Improvement of Thin MoTe 2 .

Autoren: Qu D Liu X Huang M et al.

Quelle: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2017 Oct; Vol. 29 (39). Date of Electronic Publication: 2017 Aug 28.

Publikationsart: Journal Article

Info zur Zeitschrift: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: PubMed not MEDLINE