Výsledky vyhľadávania - "static random-access memory"

SRAM Has No Chill: Exploiting Power Domain Separation to Steal On-Chip Secrets.

Autori: Mahmod, Jubayer Hicks, Matthew

Zdroj: Communications of the ACM. Aug2025, Vol. 68 Issue 8, p82-90. 9p.

Predmety: *CRYPTOGRAPHY, *COMPUTER security vulnerabilities, STATIC random access memory chips, DYNAMIC random access memory, EMBEDDED computer systems, SYSTEMS on a chip

Design and analysis of SRAM cell using swing restoration inverter for low power applications.

Autori: Rawat, Ram Murti Kumar, Vinod

Zdroj: International Journal of Electronics. Nov2025, Vol. 112 Issue 11, p2347-2365. 19p.

Predmety: *ENERGY consumption, STATIC random access memory, SEMICONDUCTOR technology, ELECTRIC inverters, DYNAMIC stability, ENERGY dissipation

SRAM am Limit der Skalierung.

Zdroj: Elektronik Industrie. 7/8/2025, Issue 6/7, p24-27. 4p.

Predmety: *RANDOM access memory, *INDUSTRIAL applications, STATIC random access memory, TORQUE, PREPAREDNESS

Design of SRAM cell using an optimized D-latch in quantum-dot cellular automata (QCA) technology.

Autori: Rathore, Nitesh Kumar Singh, Pooran

Zdroj: Journal of Applied Physics. 10/7/2024, Vol. 136 Issue 13, p1-13. 13p.

Predmety: *STATIC random access memory, *NANOTECHNOLOGY, *CELLULAR automata, *RESEARCH personnel, *DIGITAL electronics, *SEMICONDUCTORS

Defending Data from SRAM-Based Attacks.

Autori: Saroiu, Stefan¹ (AUTHOR) ssaroiu@microsoft.com

Zdroj: Communications of the ACM. Aug2025, Vol. 68 Issue 8, p81-81. 1p.

Predmety: *COMPUTER security vulnerabilities, *CRYPTOGRAPHY, STATIC random access memory chips, DYNAMIC random access memory, SYSTEMS on a chip, EMBEDDED computer systems

Design Analysis of Memristor-Based 7T SRAM Using Heterojunction Tunneling Transistors.

Autori: Prasanna Kumar, G. Budumuru, Prudhvi Raj Krishna Chaitanya Varma, A. a ďalší

Zdroj: Journal of Circuits, Systems & Computers. 11/30/2025, Vol. 34 Issue 17, p1-39. 39p.

Predmety: *STATIC random access memory, *STRAY currents, *TRANSISTOR circuits, *TRANSISTORS, *HETEROJUNCTIONS

An innovative technique for low leakage power SRAM cells using FinFET-based self-controlled voltage level techniques.

Autori: Mohammed, Javeed Ahammed Kolluri, Raju Dadi, Harihara Santosh a ďalší

Zdroj: AIP Conference Proceedings. 2025, Vol. 3342 Issue 1, p1-6. 6p.

Predmety: *STATIC random access memory, *FIELD-effect transistors, *VOLTAGE control, *ELECTRONIC circuit design, *TECHNOLOGICAL innovations, *ENERGY dissipation

An energy-efficient design of ternary SRAM using GNRFETs.

Autori: Orouji, Maedeh Abbasian, Erfan Gholipour, Morteza

Zdroj: International Journal of Electronics. Apr2025, Vol. 112 Issue 4, p632-646. 15p.

Predmety: *WAREHOUSES, STATIC random access memory, FIELD-effect transistors, MANY-valued logic, VERY large scale circuit integration

Design of 12‐T SRAM Circuit for Horizontal and Vertical Content‐Addressable Memory.

Autori: Qiu, Junsen Huang, Shengxiang Deng, Yi a ďalší

Zdroj: International Journal of Circuit Theory & Applications. Sep2025, p1. 14p. 15 Illustrations.

Predmety: *STATIC random access memory, *ENERGY consumption, *ELECTRIC interference, *LOW voltage systems, *ASSOCIATIVE storage

Design of a high-speed, low-power radiation-hardened 12 T SRAM for mitigating single event upsets (SEUs) using deep residual multiscale pufferfish convolutional neural network with attention mechanism in space & satellite systems.

Autori: Arumugam Palanichetty, Kruthikah Prabaharan, Deepa

Zdroj: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Sep2025, p1-30. 30p. 12 Illustrations.

Predmety: *STATIC random access memory, *COMPLEMENTARY metal oxide semiconductors, *RADIATION shielding, *DATA integrity, *AEROSPACE technology, *DEEP learning

Radiation‐Tolerant SRAM for Satellite Image Compression Systems: A Hybrid Memory Array Approach.

Autori: Sharma, Priyanka Neema, Vaibhav Singh Chouhan, Shailesh a ďalší

Zdroj: International Journal of Circuit Theory & Applications. Sep2025, Vol. 53 Issue 9, p5562-5578. 17p.

Predmety: *RADIATION tolerance, *STATIC random access memory, *IMAGE processing, *COMPUTER storage devices, *SOFT errors, *SIGNAL integrity (Electronics)

Design of 65 nm 6T SRAM using improved sense amplifiers and write driver circuits.

Autori: Truong, Quang Vinh Tieu, Tuan Dat

Zdroj: Majlesi Journal of Electrical Engineering. Sep2025, Issue 3, p1-11. 11p.

Predmety: *STATIC random access memory, *ELECTRONIC circuit design, *SIMULATION methods & models, *NANOSTRUCTURED materials, *MATHEMATICAL optimization, *LINE drivers (Integrated circuits), *ELECTRONIC amplifiers

Modelling, Simulation, and FPGA Implementation of an Augmented Memory Built-in Self-Test Based Design for Bit-Oriented Memory.

Autori: Pundir, Aditya Kumar Singh Singh, Pallavi Kumar, Ramesh a ďalší

Zdroj: Journal of Electronic Testing. Aug2025, Vol. 41 Issue 4, p503-523. 21p.

Predmety: *MEMORY testing, *STATIC random access memory, *FIELD programmable gate arrays, *TEST methods, *FAULT tolerance (Engineering)

MSPNet: real-time semantic segmentation with large kernel and atrous convolutions.

Autori: Ye, Zongyu Yan, Hongjuan Sun, Yewang a ďalší

Zdroj: Visual Computer. Aug2025, Vol. 41 Issue 10, p8025-8040. 16p.

Predmety: *SOURCE code, *STATIC random access memory, *SPEED, *COST

Hybrid PNN-PPN 10 T SRAM and LCTS for Leakage Reduction in VLSI.

Autori: Bose, Anitha P. Santhi, N.

Zdroj: IETE Journal of Research. Jul2025, p1-17. 17p. 20 Illustrations.

Predmety: *STATIC random access memory, *VERY large scale circuit integration, *SIGNAL integrity (Electronics), *ELECTRIC power consumption, *ENERGY consumption, *POWER transistors

Firmware Attestation in IoT Swarms Using Relational Graph Neural Networks and Static Random Access Memory.

Autori: Rouagubi, Abdelkabir El Youssofi, Chaymae Chougdali, Khalid

Zdroj: AI. Jul2025, Vol. 6 Issue 7, p161. 18p.

Predmety: *GRAPH neural networks, *STATIC random access memory, *INTERNET of things, *ANOMALY detection (Computer security), *AUTOMATION equipment, *COMPUTER firmware, *SECURITY management

Enhancement of performance through optimized intelligent static random access memory design.

Autori: Ravikumar, K. I. Sukumar, R. Anusha, K.

Zdroj: Soft Computing - A Fusion of Foundations, Methodologies & Applications. Jul2025, Vol. 29 Issue 13/14, p4999-5008. 10p.

Predmety: *STATIC random access memory, *COMPUTER performance, *RESOURCE allocation, *COMPUTER memory management, *MATHEMATICAL optimization, *DATA compression

Comparative Analysis of On-Chip FPGA Memory Architectures for Viterbi Decoder Implementation in DVB Systems.

Autori: Mosbeh, Asmaa Younes, Aly A. I. Moustafa, Hassan a ďalší

Zdroj: Journal of Engineering Sciences. Jul/Aug2025, Vol. 53 Issue 4, p136-154. 19p.

Predmety: *STATIC random access memory, *ADDITIVE white Gaussian noise, *SPACE-time codes, *DIGITAL video broadcasting, *SIGNAL-to-noise ratio

Design of Area Efficient In-Memory Adder and Sum-Comparator with a Variable Reference Voltage Mechanism.

Autori: Balasubramanian, Linknath Surya Racz, Elijah Eric Gopinath, Anoop a ďalší

Zdroj: Circuits, Systems & Signal Processing. Jul2025, Vol. 44 Issue 7, p5343-5356. 14p.

Predmety: *STATIC random access memory, *VOLTAGE references, *MONTE Carlo method, *TISSUE arrays, *ELECTRONIC data processing

Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation

Autori: Martin Dentan Soilihi Moindjie Matteo Cecchetto a ďalší

Prispievatelia: Martin Dentan Soilihi Moindjie Matteo Cecchetto a ďalší

Zdroj: IEEE Transactions on Nuclear Science. 72:1486-1495

Predmety: fusion, WEST, Tokamak devices, real-time (RT) experiment, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, W-tungsten environment in steady-state tokamak (WEST), [PHYS] Physics [physics], neutron, single-event effects (SEEs), single event effects (SEE), single-event upset (SEU), Buildings, Real-time systems, tokamak, soft-error rate (SER), Pulse measurements, Neutrons, static random access memory (SRAM), Joint European Torus (JET), CMOS, static random-access memory (SRAM), Random access memory, Deuterium, deuterium-tritium (D-T), Electronic mail, Fusion reactors, Plasmas, JET, real-time experiment

Popis súboru: application/pdf

Prístupová URL adresa: https://hal.science/hal-04941391v1
https://doi.org/10.1109/tns.2025.3540345
https://hal.science/hal-04941391v1/document
https://hal.science/hal-05105320v1
https://doi.org/10.1109/tns.2025.3540345
https://hal.science/hal-04941391v1