Suchergebnisse - "ommbe"

Strain-driven synthesis of self-catalyzed branched GaAs nanowires

Autoren: Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni and Zhichuan Niu

Schlagwörter: Branched Nanowires, Self-catalyzed, Gallium-droplets (Gds) Seeds, Epitaxy, Mbe, 半导体材料, atomic layer deposition, epitaxial growth, solid phase epitaxial growth, solid phase epitaxy, spe, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

Relation: APPLIED PHYSICS LETTERS; Guowei Zha, Mifeng Li, Ying Yu, Lijuan Wang, Jianxing Xu, Xiangjun Shang, Haiqiao Ni and Zhichuan Niu.Strain-driven synthesis of self-catalyzed branched GaAs nanowires.APPLIED PHYSICS LETTERS,2013,102(16):163115; http://ir.semi.ac.cn/handle/172111/24153

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/24153

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Autoren: Li MF(李密锋)

Schlagwörter: Inas Quantum Dots, Sacrificed Inas Layer, Molecular Beam Epitaxy, Reflection High-energy Electron, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd

Relation: Nanoscale Research Letters; 李密锋.In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.Nanoscale Research Letters,2013,8(1):86; http://ir.semi.ac.cn/handle/172111/24136

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/24136

Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

Autoren: Zhu, Yan Ni, Hai-qiao Wang, Hai-li et al.

Schlagwörter: Epitaxial Growth, Gallium Arsenide, Growth(Materials), Molecular Beam Epitaxy, Semiconducting Gallium, Semiconducting Indium, Semiconductor Quantum Wells, 半导体物理, epitaxy, atomic layer deposition, quantum well devices, solid phase epitaxial growth, solid phase epitaxy, spe, gaas, arseniures de gallium, galliumarsenid, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd

Relation: Optoelectronics Letters; Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy, Optoelectronics Letters,2011,7(5):325-329; http://ir.semi.ac.cn/handle/172111/23052

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/23052

Structures and optical characteristics of InGaN quantum dots grown by MBE

Autoren: Wang, Baozhu Yan, Cuiying Wang, Xiaoliang et al.

Schlagwörter: Atomic Force Microscopy, Gallium Nitride, Molecular Beam Epitaxy, Optical Materials, Optical Properties, Reflection High Energy Electron Diffraction, Sapphire, 半导体材料, atomic layer deposition, aluminum oxide, afm (microscopy), afm, scanning force microscopy, atomic force microscope, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd

Relation: Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering; Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang.Structures and optical characteristics of InGaN quantum dots grown by MBE, Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,2011,40(11):2030-2032; http://ir.semi.ac.cn/handle/172111/23043

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/23043

Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy

Autoren: Su SJ Wang W Zhang GZ et al.

Schlagwörter: Gesn, Ge, Molecular Beam Epitaxy, Epitaxial Growth, Semiconductors, Ge(001)2x1, 光电子学, germanium, atomic layer deposition, epitaxy, germanium (deutsch), germanium (francais), atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd

Relation: ACTA PHYSICA SINICA; Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM.Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy,ACTA PHYSICA SINICA,2011,60(2):Article no.28101; http://ir.semi.ac.cn/handle/172111/21003

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21003

Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates

Autoren: Su SJ Wang W Cheng BW et al.

Schlagwörter: Thermal Stability, Molecular Beam Epitaxy, Germanium Tin Alloys, Germanium, Molecular-beam Epitaxy, Low-temperature, Semiconductors, Ge(001)2x1, 光电子学, atomic layer deposition, cold, stabilite thermique, thermische stabilitaet, thermostability, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd

Relation: JOURNAL OF CRYSTAL GROWTH; Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM.Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates,JOURNAL OF CRYSTAL GROWTH,2011,317(1):43-46; http://ir.semi.ac.cn/handle/172111/20983

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20983

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

Autoren: Wu CM Zhang BP Shang JZ et al.

Schlagwörter: Chemical-vapor-deposition, Molecular-beam Epitaxy, Phase Epitaxy, Mirrors, Gan, Wavelengths, 光电子学, chemical vapor deposition, atomic layer deposition, vapor-plating, optical instruments, wavelength, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe

Relation: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM.High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(5):Article no.55013; http://ir.semi.ac.cn/handle/172111/20981

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20981

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Autoren: He JF Niu ZC Chang XY et al.

Schlagwörter: Molecular Beam Epitaxy, Anti-phase Domain, Gaas/ge Interface, Chemical Vapor-deposition, Junction Solar-cells, Domain-free Growth, Temperature, Quality, Future, 半导体物理, atomic layer deposition, chemical vapor deposition, vapor-plating, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, cvd, laser cvd, laser-induced cvd, lpcvd

Relation: CHINESE PHYSICS B; He JF; Niu ZC; Chang XY; Ni HQ; Zhu Y; Li MF; Shang XJ.Molecular beam epitaxy growth of GaAs on an offcut Ge substrate,CHINESE PHYSICS B,2011,20(1):Article no.18102; http://ir.semi.ac.cn/handle/172111/20905

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20905

Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism

Autoren: Wu H Gan HD Zheng HZ et al.

Schlagwörter: Magnetic Semiconductors, Molecular Beam Epitaxy, Magneto-optical Effects, Transport-properties, Semiconductor, (Ga, Cr)As, 半导体物理, atomic layer deposition, magnetooptics, faraday effect, transport properties, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd

Relation: SOLID STATE COMMUNICATIONS; Wu H; Gan HD; Zheng HZ; Lu J; Zhu H; Ji Y; Li GR; Zhao JH.Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism,SOLID STATE COMMUNICATIONS,2011,151(6):456-459; http://ir.semi.ac.cn/handle/172111/20899

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20899

Hole mediated magnetism in Mn-doped GaN nanowires

Autoren: Zhang XW Li JB Chang K et al.

Schlagwörter: Molecular-beam Epitaxy, Room-temperature, Quantum Wires, Semiconductors, Ferromagnetism, Field, Gamnn, 半导体物理, atomic layer deposition, room temperature, nanowires, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

Relation: JOURNAL OF APPLIED PHYSICS; Zhang XW; Li JB; Chang K; Li SS; Xia JB.Hole mediated magnetism in Mn-doped GaN nanowires,JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74313; http://ir.semi.ac.cn/handle/172111/20861

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20861

Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy

Autoren: Yang XG Yang T Wang KF et al.

Schlagwörter: High-density, Temperature-dependence, Self-formation, Layers, Well, Mbe, 半导体材料, temperature dependence, atomic layer deposition, lamina, plies, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

Relation: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; Yang XG; Yang T; Wang KF; Ji HM; Ni HQ; Niu ZC; Wang ZG.Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):Article no.75010; http://ir.semi.ac.cn/handle/172111/21255

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21255

Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells

Autoren: Yu JL Chen YH Jiang CY et al.

Schlagwörter: Molecular-beam Epitaxy, Inversion Asymmetry, Heterostructures, Segregation, Interface, 半导体材料, atomic layer deposition, separation, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour

Relation: JOURNAL OF APPLIED PHYSICS; Yu JL; Chen YH; Jiang CY; Liu Y; Ma H.Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.53519; http://ir.semi.ac.cn/handle/172111/21277

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21277

Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD

Autoren: Zhang BA Song HP Xu XQ et al.

Schlagwörter: Chemical-vapor-deposition, Semiconductor Nanowires, Nitride Nanotubes, Gan, Emission, Mechanism, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, nanowires, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition

Relation: NANOTECHNOLOGY; Zhang BA; Song HP; Xu XQ; Liu JM; Wang J; Liu XL; Yang SY; Zhu QS; Wang ZG.Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD,NANOTECHNOLOGY,2011,22(23):Article no.235603; http://ir.semi.ac.cn/handle/172111/21259

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21259

Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates

Autoren: Wang, W Su, SJ Zheng, J et al.

Schlagwörter: Gesn Alloys, Strained, Strain-relaxed, Molecular Beam Epitaxy, 光电子学, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd

Relation: CHINESE PHYSICS B; Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM.Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates,CHINESE PHYSICS B,2011,20(6):68103; http://ir.semi.ac.cn/handle/172111/22867

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22867

Surface characterization of AlGaN grown on Si (111) substrates

Autoren: Pan X Wang XL Xiao HL et al.

Schlagwörter: Molecular-beam Epitaxy, Field-effect Transistors, Vapor-phase Epitaxy, Group-iii Nitrides, Inversion Domains, High-temperature, Gan, Si(111), Aln, Sapphire, 半导体材料, atomic layer deposition, vapor phase epitaxy, high temperature, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd

Relation: JOURNAL OF CRYSTAL GROWTH; Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H.Surface characterization of AlGaN grown on Si (111) substrates,JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32; http://ir.semi.ac.cn/handle/172111/22661

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22661

Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Autoren: Wei, M Wang, XL Pan, X et al.

Schlagwörter: Gan, Mocvd, Si(111), Aln, Vapor-phase Epitaxy, Layers, Substrate, Stress, 半导体材料, atomic layer deposition, vapor phase epitaxy, residual stresses, stress (mechanics), photoelasticity, thermal stresses, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd

Relation: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG.Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1),MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):97-100; http://ir.semi.ac.cn/handle/172111/22655

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22655

Structure and properties of InAs/AlAs quantum dots for broadband emission

Autoren: Meng XQ (Meng X. Q.) Jin P (Jin P.) Liang ZM (Liang Z. M.) et al.

Schlagwörter: Chemical-vapor-deposition, 半导体材料, chemical vapor deposition, atomic layer deposition, vapor-plating, cvd (chemical vapor deposition), deposition, chemical vapor, vapor deposition, chemical, chemische beschichtung aus dampfphase, revetement chimique en phase vapeur, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration

Relation: JOURNAL OF APPLIED PHYSICS; Meng XQ (Meng X. Q.), Jin P (Jin P.), Liang ZM (Liang Z. M.), Liu FQ (Liu F. Q.), Wang ZG (Wang Z. G.), Zhang ZY (Zhang Z. Y.).Structure and properties of InAs/AlAs quantum dots for broadband emission.JOURNAL OF APPLIED PHYSICS,2010,108(10):Art. No. 103515; http://ir.semi.ac.cn/handle/172111/20685

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20685

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

Autoren: Song HP (Song H. P.) Zheng GL (Zheng G. L.) Yang AL (Yang A. L.) et al.

Schlagwörter: Zno, In2o3, Mocvd, Photoelectron Spectroscopies, In2o3-zno Films, Transparent, Oxide, Semiconductors, Inn, 半导体材料, atomic layer deposition, oxides, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd

Relation: SOLID STATE COMMUNICATIONS; Song HP (Song H. P.), Zheng GL (Zheng G. L.), Yang AL (Yang A. L.), Guo Y (Guo Y.), Wei HY (Wei H. Y.), Li CM (Li C. M.), Yang SY (Yang S. Y.), Liu XL (Liu X. L.), Zhu QS (Zhu Q. S.), Wang ZG (Wang Z. G.).The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy.SOLID STATE COMMUNICATIONS,2010,150(41-42):1991-1994; http://ir.semi.ac.cn/handle/172111/20646

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/20646

Surface roughness scattering in two dimensional electron gas channel

Autoren: Liu B Lu YW Jin GR et al.

Schlagwörter: Molecular-beam Epitaxy, Mobility Algan/gan Heterostructures, Ray Photoemission Spectroscopy, Performance, Aln, Modfets, Inn, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi

Relation: APPLIED PHYSICS LETTERS; Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG.Surface roughness scattering in two dimensional electron gas channel,APPLIED PHYSICS LETTERS,2010,97(26):Article no.262111; http://ir.semi.ac.cn/handle/172111/21317

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/21317

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

Autoren: Zhao J (Zhao Jie) Zeng YP (Zeng Yiping) Liu C (Liu Chao) et al.

Schlagwörter: Znte, Molecular Beam Epitaxy, Reflection High-energy Electron Diffraction, X-ray Diffraction, Atomic Force Microscopy, Vapor-phase Epitaxy, N-type Znte, Mbe Growth, 100 Gaas, Znse, Layers, Surface, Temperature, Substrate, Epilayers, atomic layer deposition, reflection high energy electron diffraction, x-ray crystallography, vapor phase epitaxy, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe

Relation: APPLIED SURFACE SCIENCE; Zhao J (Zhao Jie), Zeng YP (Zeng Yiping), Liu C (Liu Chao), Cui LJ (Cui Lijie), Li YB (Li Yanbo) .Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,2010,256(22):6881-6886; http://ir.semi.ac.cn/handle/172111/11355

Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/11355