Suchergebnisse - "epitaxial growth"

The Role of a Ta2O5 Seed Layer on Phase Evolution and Epitaxial Growth of Ta3N5 Thin Films on Al2O3(0001)

Autoren: Chang, Jui-Che Palisaitis, Justinas Kalal, Shailesh et al.

Quelle: ACS Applied Energy Materials. 8(10):6699-6706

Schlagwörter: Ta3N5, Ta2O5, magnetron sputtering, epitaxial growth, STEM, phase transformation, DFT, SGC

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-213889
https://doi.org/10.1021/acsaem.5c00804

(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography

Autoren: Eguchi, Masanori Sato, Makoto Saha, Niloy Chandra et al.

Quelle: Journal of Applied Physics; 11/14/2025, Vol. 138 Issue 18, p1-7, 7p

Schlagwörter: MICROCRACKS, GALLIUM compounds, STRAY currents, SCHOTTKY barrier diodes, VAPOR phase epitaxial growth, STACKING faults (Crystals)

225 nm far-UVC LEDs enabled directly on c-sapphire by tailored AlN molar fraction in n-AlGaN layers.

Autoren: Kirihara, Taiga Khan, M. Ajmal Sharif, M. Nawaz et al.

Quelle: Journal of Applied Physics; 11/7/2025, Vol. 138 Issue 17, p1-9, 9p

Schlagwörter: ALUMINUM gallium nitride, LIGHT emitting diodes, ELECTRIC conductivity, VAPOR phase epitaxial growth, ELECTROLUMINESCENCE measurement

Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH 3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation.

Autoren: Shimazu, Hiroki Nishizawa, Shin-Ichi Nitta, Shugo et al.

Quelle: IEEE Transactions on Semiconductor Manufacturing. May2025, Vol. 38 Issue 2, p311-323. 13p.

Schlagwörter: GALLIUM nitride, VAPOR phase epitaxial growth, CHEMICAL reactors, GAS flow, DIFFUSION kinetics, AMMONIA, SURFACE reactions, CRYSTAL grain boundaries

Structure evolution during growth of epitaxial NbN films on Al2O3 (0006) deposited by magnetron sputtering and its impact on electrical properties

Autoren: Farhadizadeh, A. Salamania, J. Sortica, Mauricio A. et al.

Quelle: Journal of Crystal Growth. 656

Schlagwörter: Niobium nitride, Reactive sputtering, Epitaxial growth, Morphology, Electrical conductivity

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-552033
https://doi.org/10.1016/j.jcrysgro.2025.128094

Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar)

Autoren: Zhang, Hengfang Chen, Jr-Tai Papamichail, Alexis et al.

Quelle: Journal of Crystal Growth. 651

Schlagwörter: N-polar GaN, epitaxial growth, SiC substrate misorientation angle, Multi-step temperature growth, MOCVD

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-210437
https://liu.diva-portal.org/smash/get/diva2:1921430/FULLTEXT01.pdf

Transient liquid assisted growth of superconducting nanocomposite films

Autoren: Jareño Cerulla, Júlia

Thesis Advisors: Puig Molina, Mª Teresa, Yáñez López, Ramón

Quelle: TDX (Tesis Doctorals en Xarxa)

Schlagwörter: Superconductivitat, Superconductividad, Superconductivity, Nanocompòsit, Nanocomposit, Nanocomposite, Creixement epitaxial, Crecimiento epitaxial, Epitaxial growth, Ciències Experimentals

Dateibeschreibung: application/pdf

Zugangs-URL: http://hdl.handle.net/10803/670580

Liquid-assisted ultrafast growth of superconducting films derived from chemical solutions

Autoren: Soler Bru, Laia

Weitere Verfasser: University/Department: Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona

Thesis Advisors: Obradors, Xavier, Ricart Miró, Susagna, Pleixats i Rovira, Roser

Quelle: TDX (Tesis Doctorals en Xarxa)

Schlagwörter: Creixement epitaxial, Crecimiento epitaxial, Epitaxial growth, Capa superconductora, Cuperconducting film, Dipòsit desolucions químiques, Depósito de soluciones químicas, Chemical solution deposition, Ciències Experimentals

Dateibeschreibung: application/pdf

Zugangs-URL: http://hdl.handle.net/10803/667208

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Autoren: Gamze Yolcu İlkay Demir

Quelle: Volume: 46, Issue: 2390-395
Cumhuriyet Science Journal

Schlagwörter: MOVPE method, SiH₄ doping source, epitaxial growth, carrier density, n AlₓGa₁₋ₓAs layers, Lasers and Quantum Electronics, Photonics, Optoelectronics and Optical Communications, Lazerler ve Kuantum Elektroniği, Fotonik, Optoelektronik ve Optik İletişim

Dateibeschreibung: application/pdf

Zugangs-URL: https://dergipark.org.tr/tr/pub/csj/issue/93334/1672625

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

Autoren: Michelle Cedillo Rosillo Oscar Contreras López Jesús Antonio Díaz et al.

Quelle: Beilstein J Nanotechnol
Beilstein Journal of Nanotechnology, Vol 16, Iss 1, Pp 690-699 (2025)

Schlagwörter: Technology, epitaxial growth, superconductivity, Chemical technology, Science, Physics, QC1-999, TP1-1185, Full Research Paper, structural evolution, tan thin films, squid

Zugangs-URL: https://doaj.org/article/a0a90d5aa5ca4deaac0bfee83bc017fe

Preparation Techniques for Perovskite Single Crystal Films: From Nucleation to Growth.

Autoren: Zhou, Yawen Liu, Da Gui Yang, Hua et al.

Quelle: Chemistry - An Asian Journal. 2/17/2025, Vol. 20 Issue 4, p1-10. 10p.

Schlagwörter: *VAPOR phase epitaxial growth, *SINGLE crystals, *DISCONTINUOUS precipitation, *METAL halides, *SURFACE defects

Fluorine doping of barium bismuthate by SF6 plasma

Autoren: Ceccon, Luca Ahmed, Islam Kaviani, Moloud et al.

Schlagwörter: Technology, Science & Technology, Physics, Materials Science, 0205 Optical Physics, Materials Science, Multidisciplinary, TOPOLOGICAL INSULATOR, Physics, Applied, ELECTRONIC-PROPERTIES, 0906 Electrical and Electronic Engineering, THIN-FILMS, Physical Sciences, EPITAXIAL-GROWTH, Science & Technology - Other Topics, CRYSTAL-STRUCTURE, BABIO3, Nanoscience & Nanotechnology, 51 Physical sciences, 0206 Quantum Physics, 40 Engineering

Zugangs-URL: https://lirias.kuleuven.be/handle/20.500.12942/773629

Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing.

Autoren: Okuda, Tomoya Ota, Shunsuke Kubota, Kouei et al.

Quelle: Applied Physics Letters; 11/3/2025, Vol. 127 Issue 18, p1-7, 7p

Schlagwörter: GALLIUM nitride, HETEROSTRUCTURES, ELECTRON mobility, ELECTRONIC equipment, VAPOR phase epitaxial growth

Ni‐Assisted Endotaxial Growth of Au Nanoparticles Within TiO2 Nanowires.

Autoren: Razaghi, Zhina Zhu, Guo‐zhen

Quelle: Advanced Materials Interfaces; 10/6/2025, Vol. 12 Issue 19, p1-8, 8p

Schlagwörter: GOLD nanoparticles, TITANIUM dioxide, VAPOR phase epitaxial growth, CRYSTAL orientation, NANOPARTICLES, NANOSTRUCTURES

Advances in the design and manipulation of self-assembling peptide and protein nanostructures for biomedical applications

Autoren: Xu Jianping Gao Feng Zhang Feng et al.

Quelle: Nanotechnology Reviews, Vol 14, Iss 1, Pp 3737-58 (2025)

Schlagwörter: self-assembling peptide, chiral nanostructure, epitaxial growth, synthetic biology, stimuli-responsive system, Technology, Chemical technology, TP1-1185, Physical and theoretical chemistry, QD450-801

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2191-9097

Zugangs-URL: https://doaj.org/article/16ec1d62838d4a829b0cdb8f5a183f5e

Epitaxial growth of Pd clusters on N-doped Ag nanowires for oxygen reduction reaction

Autoren: Qinhe Guan Shiwei Sun Xiaohang Ge et al.

Quelle: ChemPhysMater, Vol 4, Iss 1, Pp 71-77 (2025)

Schlagwörter: N doping, Chemistry, Oxygen reduction, Physics, QC1-999, Ag nanowires, Epitaxial growth, PdAg heterostructure, QD1-999

Zugangs-URL: https://doaj.org/article/39b25dd3849845adaafc62d3e4e85e09

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure

Autoren: Shigehisa Shibayama Shuto Ishimoto Yoshiki Kato et al.

Quelle: IEEE Journal of the Electron Devices Society, Vol 13, Pp 79-85 (2025)

Schlagwörter: double barrier structure, germanium-silicon-tin (GeSiSn), epitaxial growth, Germanium (Ge), heterostructure, Electrical engineering. Electronics. Nuclear engineering, germanium-tin (GeSn), TK1-9971

Zugangs-URL: https://doaj.org/article/f62ae4f0580447199938bbdbb22cde03

Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained

Autoren: Bertoni I. Ugolotti A. Scalise E. et al.

Quelle: Journal of Materials Chemistry C. 13:1469-1476

Schlagwörter: Condensed Matter - Materials Science, Epitaxial growth, Gallium compounds, Growth rate, Metastable phases, Phase interfaces, Sapphire, Strain energy, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences

Dateibeschreibung: application/pdf

Zugangs-URL: http://arxiv.org/abs/2410.19530
https://hdl.handle.net/10281/529106
https://doi.org/10.1039/d4tc04307c

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Autoren: Ghezellou, Misagh ul-Hassan, Jawad

Quelle: Physica Status Solidi (B). 261(4)

Schlagwörter: 4H-SiC, chloride-based chemical vapor deposition, epitaxial growth, inclined line-like defects, short step bunching

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-200853
https://doi.org/10.1002/pssb.202300535

Deep-level point defects at Ga sites in dilute AlxGa1−xN alloys.

Autoren: Kruszewski, P. Coutinho, J. Markevich, V. P. et al.

Quelle: Applied Physics Letters; 9/8/2025, Vol. 127 Issue 10, p1-7, 7p

Schlagwörter: POINT defects, GALLIUM alloys, DEEP level transient spectroscopy, ELECTRON traps, VAPOR phase epitaxial growth