Výsledky vyhľadávania - "cascode mosfet"

A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11- μ m Bulk and 22-nm FD-SOI

Autori: Martin Lefebvre David Bol UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

Prispievatelia: Martin Lefebvre David Bol UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

Zdroj: IEEE Journal of Solid-State Circuits, Vol. 59, no. 11, p. 3752-3766 (November 2024)

Predmety: FOS: Computer and information sciences, B.7.0, temperature-independent, ultra-low power (ULP), self-cascode MOSFET (SCM), Hardware Architecture (cs.AR), temperature coefficient (TC), Computer Science - Hardware Architecture, voltage reference, 7. Clean energy, constant-with-temperature (CWT), current reference

Prístupová URL adresa: http://arxiv.org/abs/2406.04741
https://hdl.handle.net/2078.1/288064

An 1-µA, 25 ppm/°C, PVT resilient resistor-less CMOS current reference

Autori: Casanas, Cesar Alvandpour, Atila Saberkari, Alireza a ďalší

Zdroj: Microelectronics Journal. 166

Predmety: Current reference, PTAT, CTAT, Self-cascode MOSFET (SCM), Temperature coefficient (TC), Line sensitivity (LS), PVT variations, Inversion regions, Transconductance efficiency (gm/ID)

Popis súboru: print

Prístupová URL adresa: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-218739

A 1.1-/0.9-nA Temperature-Independent 213-/565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI

Autori: Martin Lefebvre Denis Flandre David Bol a ďalší

Prispievatelia: Martin Lefebvre Denis Flandre David Bol a ďalší

Zdroj: IEEE Journal of Solid-State Circuits, Vol. 58, no. 8, p. 2239-2251 (August 2023)

Predmety: FOS: Computer and information sciences, B.7.0, temperature-independent, self-cascode MOSFET (SCM), Hardware Architecture (cs.AR), temperature coefficient (TC), 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, Computer Science - Hardware Architecture, 7. Clean energy, constant-with-temperature (CWT), current reference

Prístupová URL adresa: http://arxiv.org/abs/2302.04504
https://hdl.handle.net/2078.1/272466

A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI

Autori: Lefebvre, Martin Flandre, Denis Bol, David a ďalší

Prispievatelia: Lefebvre, Martin Flandre, Denis Bol, David a ďalší

Zdroj: Proceedings of the ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC), p. 469-472

Predmety: temperature-independent, self-cascode MOSFET (SCM), 0103 physical sciences, temperature coefficient (TC), 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 01 natural sciences, constant-with-temperature (CWT), current reference

Prístupová URL adresa: https://hdl.handle.net/2078.1/266034

Area-Efficient nA-to-µA Constant-with-Temperature CMOS Current References for the Internet of Things

Autori: Lefebvre, Martin UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique UCL - Ecole Polytechnique de Louvain a ďalší

Prispievatelia: Lefebvre, Martin UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique UCL - Ecole Polytechnique de Louvain a ďalší

Predmety: Self-cascode MOSFET (SCM), Ultra-low-power (ULP), Voltage reference, Current reference, Temperature coefficient (TC), Constant-with-temperature (CWT), Forward body biasing (FBB), Area-efficient, Temperature-independent

Prístupová URL adresa: https://hdl.handle.net/2078.1/287069

Linear-Logarithmic CMOS Image Sensor with Reduced FPN Using Photogate and Cascode MOSFET

Autori: Myunghan Bae Byung-Soo Choi Sang-Hwan Kim a ďalší

Zdroj: Proceedings, Vol 1, Iss 4, p 338 (2017)

Predmety: CMOS image sensor, hard reset, photogate, cascode MOSFET, General Works

Relation: https://www.mdpi.com/2504-3900/1/4/338; https://doaj.org/toc/2504-3900; https://doaj.org/article/421e6c6c26764e328497928c24f1e7d4

Dostupnosť: https://doi.org/10.3390/proceedings1040338
https://doaj.org/article/421e6c6c26764e328497928c24f1e7d4

A new monolithic power actuator devoted to high voltage and high frequency applications

Autori: BUONOMO S ENEA V GULLOTTA G a ďalší

Predmety: Emitter-Switching Bipolar Transistor, ESBT, Cascode, MOSFET, BJT

Popis súboru: application/pdf

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Autori: Lv YJ Lin ZJ Corrigan TD a ďalší

Predmety: Field-effect Transistors, Gan, Dependence, Contacts, States, Ni, 半导体材料, dependency, electric contacts, cantons, nickel, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: JOURNAL OF APPLIED PHYSICS; Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics,JOURNAL OF APPLIED PHYSICS,2011,109(7):Article no.74512; http://ir.semi.ac.cn/handle/172111/21247

Dostupnosť: http://ir.semi.ac.cn/handle/172111/21247

The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure

Autori: Bi Y Wang XL Xiao HL a ďalší

Predmety: Algan/gan/ingan/gan Dh-hemts, Field-effect Transistors, Algan/gan, Polarization, Passivation, Hfets, Ghz, 半导体材料, electromagnetic wave polarisation, passivity, oxidation, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS; Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ.The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure,EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):10102; http://ir.semi.ac.cn/handle/172111/22663

Dostupnosť: http://ir.semi.ac.cn/handle/172111/22663

Tuning of plasmon propagation in two-dimensional electrons

Autori: Li C Wu XG Li C Chinese Acad Sci SKLSM Inst Semicond Beijing 100083 Peoples R China. E-mail Address: lichao@semi.ac.cn

Predmety: Field Effect Transistors, Plasmons, Semiconductor Heterojunctions, Spin-orbit Interactions, Two-dimensional Electron Gas, 半导体物理, field-effect transistors, dispersion relations, semiconductors--junctions, electron gas, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets

Relation: APPLIED PHYSICS LETTERS; Li C; Wu XG .Tuning of plasmon propagation in two-dimensional electrons ,APPLIED PHYSICS LETTERS,2008 ,93(25):Art. No. 251501; http://ir.semi.ac.cn/handle/172111/7443

Dostupnosť: http://ir.semi.ac.cn/handle/172111/7443

Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Autori: Cao GH (Cao Guohua) Qin DS (Qin Dashan) Cao JS (Cao Junsong) a ďalší

Predmety: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: JOURNAL OF APPLIED PHYSICS; Cao, GH (Cao, Guohua); Qin, DS (Qin, Dashan); Cao, JS (Cao, Junsong); Guan, M (Guan, Min); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) .Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection ,JOURNAL OF APPLIED PHYSICS,JUN 15 2007,101 (12):Art.No.124507; http://ir.semi.ac.cn/handle/172111/9374

Dostupnosť: http://ir.semi.ac.cn/handle/172111/9374

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Autori: Zhao J (Zhao, Jianzhi) Lin Z (Lin, Zhaojun) Corrigan TD (Corrigan, Timothy D.) a ďalší

Predmety: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: APPLIED PHYSICS LETTERS; Zhao, J (Zhao, Jianzhi); Lin, Z (Lin, Zhaojun); Corrigan, TD (Corrigan, Timothy D.); Wang, Z (Wang, Zhen); You, Z (You, Zhidong); Wang, Z (Wang, Zhanguo) .Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures ,APPLIED PHYSICS LETTERS,OCT 22 2007,91 (17):Art.No.173507; http://ir.semi.ac.cn/handle/172111/9214

Dostupnosť: http://ir.semi.ac.cn/handle/172111/9214

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

Autori: Han XX Li DB Yuan HR a ďalší

Predmety: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: PHYSICA STATUS SOLIDI B-BASIC RESEARCH; Han, XX; Li, DB; Yuan, HR; Sun, XH; Liu, XL; Wang, XH; Zhu, QS; Wang, ZG .Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,NOV 2004,241 (13):3000-3008; http://ir.semi.ac.cn/handle/172111/7912

Dostupnosť: http://ir.semi.ac.cn/handle/172111/7912

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

Autori: Zhang JP Sun DZ Wang XL a ďalší

Predmety: Field-effect Transistors, Luminescence Spectra, Absorption, Charge, 半导体物理, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors, 衰减, attenuation

Relation: APPLIED PHYSICS LETTERS; Zhang JP; Sun DZ; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure ,APPLIED PHYSICS LETTERS,1998,73(17):2471-2472; http://ir.semi.ac.cn/handle/172111/13084

Dostupnosť: http://ir.semi.ac.cn/handle/172111/13084

Low Voltage Current Conveyor Design Techniques

Techniky návrhu nízkonapěťových proudových konvejorů

Autori: El Dbib, Issa

Thesis Advisors: Brzobohatý, Jaromír

Predmety: Bulk-Driven Current Conveyor, Nízkopříkonová technika, Self Cascode MOSFET, Low Voltage Current Conveyor, Current Conveyor Based Filters., Proudový Konvejor, Substrátem řízený MOSFET, Self Cascode Current Conveyor, Bulk-Driven MOSFET, Filtry s proudovými konvejory

Dostupnosť: http://www.nusl.cz/ntk/nusl-233421

Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes

Autori: 张营营 王奉超 赵亚溥 a ďalší

Predmety: Silicon Monatomic Chain, Size-selective Encapsulation, Electronic Transport Properties, Negative Differential Resistance, Transmission Spectrum, Field-effect Transistors, Single, Nanowires, Simulations, 交叉与边缘领域的力学::物理力学, 二类/Q2, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet

Relation: COMPUTATIONAL MATERIALS SCIENCE; Zhang YY,Wang FC,Zhao YP. Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes[J]. COMPUTATIONAL MATERIALS SCIENCE,2012,62:87-92.; http://dspace.imech.ac.cn/handle/311007/46713; http://dx.doi.org/10.1016/j.commatsci.2012.04.050

Dostupnosť: http://dspace.imech.ac.cn/handle/311007/46713
https://doi.org/10.1016/j.commatsci.2012.04.050

Low Voltage Current Conveyor Design Techniques ; Techniky návrhu nízkonapěťových proudových konvejorů

Autori: El Dbib, Issa Brzobohatý, Jaromír

Prispievatelia: El Dbib, Issa Brzobohatý, Jaromír

Predmety: Proudový Konvejor, Substrátem řízený MOSFET, Filtry s proudovými konvejory, Nízkopříkonová technika, Low Voltage Current Conveyor, Bulk-Driven MOSFET, Self Cascode MOSFET, Bulk-Driven Current Conveyor, Self Cascode Current Conveyor, Current Conveyor Based Filters

Popis súboru: application/pdf; text/html

Relation: EL DBIB, I. Low Voltage Current Conveyor Design Techniques [online]. Brno: Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. 2008.; 16636; http://hdl.handle.net/11012/12774

Dostupnosť: http://hdl.handle.net/11012/12774

Low Voltage Current Conveyor Design Techniques

Autori: El Dbib, Issa Brzobohatý, Jaromír

Prispievatelia: El Dbib, Issa Brzobohatý, Jaromír

Predmety: Bulk-Driven Current Conveyor, Self Cascode Current Conveyor, Substrátem řízený MOSFET, Proudový Konvejor, Self Cascode MOSFET, Filtry s proudovými konvejory, Nízkopříkonová technika, Low Voltage Current Conveyor, Bulk-Driven MOSFET, Current Conveyor Based Filters

Popis súboru: application/pdf; text/html

Prístupová URL adresa: http://hdl.handle.net/11012/12774

Area-Efficient nA-to-µA Constant-with-Temperature CMOS Current References for the Internet of Things

Autori: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique UCL - Ecole Polytechnique de Louvain Bol, David a ďalší

Témy: Current reference, Temperature coefficient (TC), Constant-with-temperature (CWT), Forward body biasing (FBB), Self-cascode MOSFET (SCM), Ultra-low-power (ULP), Voltage reference, Temperature-independent, Area-efficient, info:eu-repo/semantics/doctoralThesis

URL: http://hdl.handle.net/2078.1/287069

A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-µm Bulk and 22-nm FD-SOI

Autori: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique Lefebvre, Martin Bol, David

Zdroj: IEEE Journal of Solid-State Circuits, Vol. 59, no. 11, p. 3752-3766 (November 2024)

Témy: constant-with-temperature (CWT), current reference, self-cascode MOSFET (SCM), temperature coefficient (TC), temperature-independent, ultra-low power (ULP), voltage reference, info:eu-repo/semantics/article

URL: http://hdl.handle.net/2078.1/288064
info:eu-repo/grantAgreement/FRS-FNRS//CDR J.0014.20