Suchergebnisse - "amorphous semiconductors"

How accurate are lattice models with Gaussian energy disorder in describing charge-carrier transport and reactions in amorphous organic semiconductors?

Autoren: Wojcik, Mariusz Zawieja-Bartosinska, Irmina

Quelle: Journal of Chemical Physics. 3/21/2025, Vol. 162 Issue 11, p1-12. 12p.

Schlagwörter: *AMORPHOUS semiconductors, *GAUSSIAN distribution, *DENSITY, *ORGANIC semiconductors

Effect of active layer thickness on device performance of InSnZnO thin-film transistors grown by atomic layer deposition.

Autoren: Zhang, Yu Luo, Binbin Li, Runzhou et al.

Quelle: Journal of Chemical Physics. 2/7/2025, Vol. 162 Issue 5, p1-11. 11p.

Schlagwörter: *ATOMIC layer deposition, *AMORPHOUS semiconductors, *THRESHOLD voltage, *CARRIER density, *INDIUM gallium zinc oxide, *THIN films, *THIN film transistors

Spin–lattice relaxation mechanism of magnetic field effects on singlet fission in amorphous molecular semiconductors.

Autoren: Shushin, A. I.¹ (AUTHOR) shushin@chph.ras.ru

Quelle: Journal of Chemical Physics. 2/7/2025, Vol. 162 Issue 5, p1-16. 16p.

Schlagwörter: *MAGNETIC field effects, *AMORPHOUS semiconductors, *MAGNETIC fields, *MAGNETIC relaxation, *EXCITED states

Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors.

Autoren: Cho, Yun-Ju Kwon, Young-Ha Seong, Nak-Jin et al.

Quelle: Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-10. 10p.

Schlagwörter: *AMORPHOUS semiconductors, *X-ray photoelectron spectroscopy, *BINDING energy, *ELECTRON traps, *TRANSISTORS

High-performance solar-blind deep ultraviolet photodetector based on the H2-annealed amorphous ZnGa2O4 and its preliminary exploration in image sensor.

Autoren: Li, Pengkun Peng, Kai Xue, Difei et al.

Quelle: Applied Physics Letters. 9/1/2025, Vol. 127 Issue 9, p1-9. 9p.

Schlagwörter: *ULTRAVIOLET detectors, *AMORPHOUS semiconductors, *MAGNETRON sputtering, *MICROSTRUCTURE, *PHOTODETECTORS

2D Amorphous Homojunction Transistors Exfoliated from Liquid Metals.

Autoren: Le, Minh Nhut Rahman, Md Saifur Agnew, Simon A. et al.

Quelle: Advanced Functional Materials. Jul2025, p1. 10p. 6 Illustrations.

Schlagwörter: *TWO-dimensional materials (Nanotechnology), *AMORPHOUS semiconductors, *TRANSISTORS, *TRANSPARENT electronics, *LIQUID metals, *DURABILITY, *FLEXIBLE electronics, *ELECTRON mobility

Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures.

Autoren: Tang, Hongwei Belmonte, Attilio Lin, Dennis et al.

Quelle: Applied Physics Letters. 6/9/2025, Vol. 126 Issue 23, p1-6. 6p.

Schlagwörter: *SEMICONDUCTORS, *AMORPHOUS semiconductors, *ELECTRON transport, *INDIUM gallium zinc oxide, *TRANSISTORS

High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.

Autoren: Sun, Jiwon Bae, Jinbaek Lim, Taebin et al.

Quelle: Physica Status Solidi. A: Applications & Materials Science. Jun2025, Vol. 222 Issue 11, p1-9. 9p.

Schlagwörter: *THIN film transistors, *AMORPHOUS semiconductors, *CHARGE carrier mobility

Hydrogen‐free oxide thin‐film transistor toward resolving hydrogen‐associated instability.

Autoren: Furuta, Mamoru Alom, Mir Mutakabbir Ando, Motoki et al.

Quelle: Journal of the Society for Information Display. May2025, Vol. 33 Issue 5, p582-593. 12p.

Schlagwörter: *AMORPHOUS semiconductors, *CHEMICAL vapor deposition, *TRANSISTORS, *PASSIVATION, *INDIUM gallium zinc oxide, *THIN film transistors

Exciton diffusion in amorphous organic semiconductors: Reducing simulation overheads with machine learning.

Autoren: Wechwithayakhlung, Chayanit Weal, Geoffrey R. Kaneko, Yu et al.

Quelle: Journal of Chemical Physics. 5/28/2023, Vol. 158 Issue 20, p1-15. 15p.

Schlagwörter: *AMORPHOUS semiconductors, *ORGANIC semiconductors, *MACHINE learning, *AB-initio calculations, *KRIGING

Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors.

Autoren: Wu, Jianting Guo, Min Wu, Qian et al.

Quelle: Applied Physics Letters. Mar2025, Vol. 126 Issue 9, p1-8. 8p.

Schlagwörter: *AMORPHOUS semiconductors, *THRESHOLD voltage, *THIN film transistors, *TRANSISTORS, *LIGHTING, *OXYGEN, *PARTIAL pressure

Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors.

Autoren: Jeong, Kwangsik Shin, Dong yeob Park, Ji‐Min et al.

Quelle: Advanced Science. 2/3/2025, Vol. 12 Issue 5, p1-8. 8p.

Schlagwörter: *AMORPHOUS semiconductors, *SECOND harmonic generation, *THRESHOLD voltage, *ELECTRIC fields, *SEMICONDUCTOR junctions

Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance.

Autoren: Kim, Gwang-Bok Choi, Cheol Hee Hur, Jae Seok et al.

Quelle: Journal of Physics D: Applied Physics. 1/6/2025, Vol. 58 Issue 1, p1-16. 16p.

Schlagwörter: *INDIUM gallium zinc oxide, *AMORPHOUS semiconductors, *SEMICONDUCTORS, *N-type semiconductors, *MATERIALS science, *THIN film transistors

Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.

Autoren: Lee, Solbee Lim, Taebin Priyadarshi, Sunaina et al.

Quelle: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p

Schlagwörter: TWO-dimensional electron gas, THIN film transistors, METAL oxide semiconductor field-effect transistors, INTEGRATED circuits, INDIUM tin oxide, AMORPHOUS semiconductors, THERMAL stability

Electrospun Amorphous In‐Zn‐O Nanofibers: Nanostructural Engineering for High Performance Field Effect Transistors and Efficient Ethylene Gas Sensors.

Autoren: Bui, Tan Tan Lee, Jinho Jeon, Dae‐Young et al.

Quelle: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-11, 11p

Schlagwörter: NANOFIBERS, FIELD-effect transistors, WEARABLE technology, NANOSTRUCTURED materials, NANOWIRES, AMORPHOUS semiconductors, ELECTRONIC equipment, GAS detectors

Planar Surface Plasmonic Resonance Light Coupling via Transmission Diffraction Gratings for Chemical Optical Sensors.

Autoren: Popescu, Aurelian Savastru, Dan

Quelle: Plasmonics; Oct2025, Vol. 20 Issue 10, p9217-9223, 7p

Schlagwörter: SURFACE plasmon resonance, DIFFRACTION gratings, REFRACTIVE index, ANGULAR measurements, THEORY of wave motion, CHEMICAL detectors, AMORPHOUS semiconductors, HOLOGRAPHIC interferometry

Reliability evaluation of spacecraft power generation performance with competitive failure processes under irradiation.

Autoren: Zhang, Tingyu Zeng, Ying Huang, Xin et al.

Quelle: Quality & Reliability Engineering International. Oct2024, Vol. 40 Issue 6, p3304-3319. 16p.

Schlagwörter: *SOLAR cells, *AMORPHOUS semiconductors, *SEMICONDUCTOR materials, *GATE array circuits, *AMORPHOUS substances

Density of states in locally ordered amorphous organic semiconductors: Emergence of the exponential tails.

Autoren: Novikov, S. V.¹ (AUTHOR) novikov@elchem.ac.ru

Quelle: Journal of Chemical Physics. 3/28/2021, Vol. 154 Issue 12, p1-7. 7p.

Schlagwörter: *AMORPHOUS semiconductors, *DENSITY of states, *ORGANIC semiconductors, *QUADRUPOLES, *MICROSTRUCTURE

Resistive switching and magnetic modulation based on graphene oxide quantum dot-doped amorphous TiO2 composites.

Autoren: Wang, Fan Liu, Lifu Wang, Jingjuan et al.

Quelle: Journal of Physics D: Applied Physics; 9/29/2025, Vol. 58 Issue 39, p1-8, 8p

Schlagwörter: GRAPHENE oxide, QUANTUM dots, COMPUTER storage devices, NEUROMORPHICS, MAGNETIC control, AMORPHOUS semiconductors, MEMRISTORS

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution.

Autoren: Lee, Jung Hun Kim, Jae Young Lee, Hyeon-Ji et al.

Quelle: Nano-Micro Letters; 9/15/2025, Vol. 18 Issue 1, p1-59, 59p

Schlagwörter: SEMICONDUCTOR materials, TRANSISTORS, SEMICONDUCTOR devices, SCALABILITY, TWO-dimensional materials (Nanotechnology), PEROVSKITE, METAL-insulator transitions, AMORPHOUS semiconductors