Výsledky vyhľadávania - "Zhu, Zhongyunshen"

III–V heterostructure tunnel field-effect transistor operation at different temperature regimes.

Autori: Krishnaraja, Abinaya Zhu, Zhongyunshen Svensson, Johannes a ďalší

Zdroj: Applied Physics Letters; 11/4/2024, Vol. 125 Issue 19, p1-7, 7p

Predmety: TUNNEL field-effect transistors, FERMI-Dirac distribution, NANOWIRE devices, DEBYE temperatures, HIGH temperatures

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor.

Autori: Zhu, Zhongyunshen Persson, Anton E. O. Wernersson, Lars-Erik

Zdroj: Nature Communications; 5/3/2023, Vol. 14 Issue 1, p1-9, 9p

Predmety: TUNNEL field-effect transistors, TUNNEL junctions (Materials science), CIRCUIT complexity, HYBRID integrated circuits, SECOND harmonic generation, NANOWIRES, SUPPLY & demand, SEMICONDUCTOR nanowires

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing.

Autori: Zhu, Zhongyunshen Persson, Anton E. O. Wernersson, Lars‐Erik

Zdroj: Advanced Electronic Materials; Mar2025, Vol. 11 Issue 3, p1-9, 9p

Predmety: ARTIFICIAL intelligence, ELECTRONIC data processing, ENERGY consumption, TRANSISTORS, VOLTAGE, NANOWIRE devices

gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs.

Autori: Rangasamy, Gautham Zhu, Zhongyunshen Fhager, Lars Ohlsson a ďalší

Zdroj: Electronics Letters (Wiley-Blackwell); Sep2023, Vol. 59 Issue 18, p1-3, 3p

Predmety: TUNNEL field-effect transistors, NANOWIRES, CURRENT conveyors, INTEGRATED circuit design, HIGH voltages, CURRENT-mode circuits

Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon.

Autori: Persson, Anton E. O. Zhu, Zhongyunshen Athle, Robin a ďalší

Zdroj: IEEE Electron Device Letters; Jun2022, Vol. 43 Issue 6, p854-857, 4p

Predmety: SILICON nanowires, NANOWIRES, FIELD-effect transistors, SILICON, METAL oxide semiconductor field-effect transistors, LEAD titanate, NANOELECTROMECHANICAL systems

Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires.

Autori: Zhu, Zhongyunshen Song, Yuxin Chen, Qimiao a ďalší

Zdroj: Nanoscale Research Letters; 7/28/2017, Vol. 12 Issue 1, p1-8, 8p

Predmety: GERMANIUM, FINITE element method, STRAIN energy, VALENCE bands, OPTOELECTRONICS

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction.

Autori: Dzhigaev, Dmitry Svensson, Johannes Krishnaraja, Abinaya a ďalší

Zdroj: Nanoscale; 4/7/2022, Vol. 14 Issue 13, p5247-5247, 1p

Compressively-strained GaSb nanowires with core-shell heterostructures.

Autori: Zhu, Zhongyunshen Svensson, Johannes Persson, Axel R. a ďalší

Zdroj: Nano Research; Sep2020, Vol. 13 Issue 9, p2517-2524, 8p

Bi2Te3 photoconductive detectors on Si.

Autori: Liu, Juanjuan Li, Yaoyao Song, Yuxin a ďalší

Zdroj: Applied Physics Letters; 4/3/2017, Vol. 110 Issue 14, p1-4, 4p, 4 Graphs

InPBi quantum dots for super-luminescence diodes

Autori: Zhang, Liyao Song, Yuxin Chen, Qimiao a ďalší

Prispievatelia: Zhang, Liyao Song, Yuxin Chen, Qimiao a ďalší

Predmety: DRNTU::Engineering::Electrical and electronic engineering, InPBi, Quantum Dot

Popis súboru: 9 p.; application/pdf

Relation: Nanomaterials; https://hdl.handle.net/10356/89585; https://hdl.handle.net/10220/46294

Dostupnosť: https://hdl.handle.net/10356/89585
https://hdl.handle.net/10220/46294
https://doi.org/10.3390/nano8090705