Suchergebnisse - "Wang XL"
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Autoren: et al.
Quelle: Nature communications [Nat Commun] 2025 Mar 13; Vol. 16 (1), pp. 2508. Date of Electronic Publication: 2025 Mar 13.
Publikationsart: Published Erratum
Info zur Zeitschrift: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: PubMed not MEDLINE; MEDLINE
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Autoren: et al.
Quelle: Acta pharmacologica Sinica [Acta Pharmacol Sin] 2023 May; Vol. 44 (5), pp. 1105-1106.
Publikationsart: Published Erratum
Info zur Zeitschrift: Publisher: Nature Publishing Group Country of Publication: United States NLM ID: 100956087 Publication Model: Print Cited Medium: Internet ISSN: 1745-7254 (Electronic) Linking ISSN: 16714083 NLM ISO Abbreviation: Acta Pharmacol Sin Subsets: PubMed not MEDLINE; MEDLINE
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Autoren: et al.
Quelle: Nature materials [Nat Mater] 2022 Feb; Vol. 21 (2), pp. 262.
Publikationsart: Published Erratum
Info zur Zeitschrift: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101155473 Publication Model: Print Cited Medium: Internet ISSN: 1476-4660 (Electronic) Linking ISSN: 14761122 NLM ISO Abbreviation: Nat Mater Subsets: PubMed not MEDLINE; MEDLINE
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Autoren: et al.
Quelle: BMC Veterinary Research. 9/18/2023, Vol. 19 Issue 1, p1-1. 1p.
Schlagworte: Giant panda, Chronic kidney failure, Pandas
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Autoren: et al.
Quelle: American Journal of Gastroenterology (Lippincott Williams & Wilkins); Nov2025, Vol. 120 Issue 11, p2644-2659, 16p
Schlagwörter: PROBIOTICS, HELICOBACTER pylori, EUROPEANS, BIFIDOBACTERIUM, LACTOBACILLUS, SAFETY, TREATMENT effectiveness, DISEASE eradication
Geografische Kategorien: EUROPE, EASTERN Europe, CENTRAL Europe
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Autoren:
Quelle: Frontiers in Digital Health; 2025, p1-10, 10p
Schlagwörter: SERIAL publications, HEART diseases, SKIN tumors, DATA mining, ARTIFICIAL intelligence, DIABETIC retinopathy, BREAST tumors, CONVOLUTIONAL neural networks, CITATION analysis, CHRONIC diseases, BIBLIOGRAPHICAL citations, BIBLIOMETRICS, MEDICAL research, DEEP learning, BIBLIOGRAPHY, MACHINE learning, AUTHORS, INTERNET of things
Geografische Kategorien: UNITED States
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Autoren: et al.
Quelle: International Journal of COPD, Vol 20, Iss Issue 1, Pp 3279-3294 (2025)
Schlagwörter: COPD, Red blood cell, Proteasome, Proteomics, Diseases of the respiratory system, RC705-779
Dateibeschreibung: electronic resource
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Autoren: et al.
Quelle: Nature and Science of Sleep, Vol 17, Iss Issue 1, Pp 1985-1995 (2025)
Schlagwörter: Sleep, Chronotype, Metabolic parameters, Hypertension, Risk factors, Psychiatry, RC435-571, Neurophysiology and neuropsychology, QP351-495
Dateibeschreibung: electronic resource
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Autoren: et al.
Quelle: International Journal of Oral & Maxillofacial Implants; Mar/Apr2025, Vol. 40 Issue 2, Following p171-180, 25p
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Autoren: et al.
Quelle: International Journal of Women's Health, Vol 17, Pp 807-823 (2025)
Schlagwörter: pcos, immunity, metabolites, mediating role, mr analysis, Gynecology and obstetrics, RG1-991
Dateibeschreibung: electronic resource
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Autoren: et al.
Quelle: Frontiers in Veterinary Science. 2025, p1-16. 16p.
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Autoren: et al.
Quelle: Veterinary Research. 11/5/2025, Vol. 56 Issue 1, p1-13. 13p.
Schlagworte: Ubiquitin ligases, Type I interferons, Intestinal infections, Viral gastroenteritis, Antiviral agents, Natural immunity, Viral replication
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Autoren: et al.
Quelle: Drug Design, Development and Therapy, Vol 18, Pp 5997-6015 (2024)
Schlagwörter: chaihu-shugan-san, depression, hippocampus, hpa, osteoporosis, stress, Therapeutics. Pharmacology, RM1-950
Dateibeschreibung: electronic resource
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Autoren: et al.
Quelle: Drug Design, Development and Therapy, Vol 18, Pp 4615-4627 (2024)
Schlagwörter: remimazolam, propofol, patient satisfaction, outpatient gynecological surgery, sedation, Therapeutics. Pharmacology, RM1-950
Dateibeschreibung: electronic resource
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Autoren: et al.
Schlagwörter: Molecular-beam Epitaxy, Field-effect Transistors, Vapor-phase Epitaxy, Group-iii Nitrides, Inversion Domains, High-temperature, Gan, Si(111), Aln, Sapphire, 半导体材料, atomic layer deposition, vapor phase epitaxy, high temperature, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd
Relation: JOURNAL OF CRYSTAL GROWTH; Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H.Surface characterization of AlGaN grown on Si (111) substrates,JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32; http://ir.semi.ac.cn/handle/172111/22661
Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22661
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Autoren: et al.
Schlagwörter: Algan/gan/ingan/gan Dh-hemts, Field-effect Transistors, Algan/gan, Polarization, Passivation, Hfets, Ghz, 半导体材料, electromagnetic wave polarisation, passivity, oxidation, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet
Relation: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS; Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ.The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure,EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):10102; http://ir.semi.ac.cn/handle/172111/22663
Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22663
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Autoren: et al.
Schlagwörter: Gan, Mocvd, Si(111), Aln, Vapor-phase Epitaxy, Layers, Substrate, Stress, 半导体材料, atomic layer deposition, vapor phase epitaxy, residual stresses, stress (mechanics), photoelasticity, thermal stresses, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd
Relation: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG.Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1),MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2011,14(2):97-100; http://ir.semi.ac.cn/handle/172111/22655
Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22655
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Autoren: et al.
Schlagwörter: Light-emitting-diodes, Vapor-phase Epitaxy, Band-gap, Mg, Photoluminescence, Ingan, Dependence, Strain, Energy, Inn, 半导体材料, light emitting diodes, vapor phase epitaxy, energy bands, magnesium, dependency, water-power, force and energy, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode, 带隙
Relation: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X.Comparison of as-grown and annealed GaN/InGaN:Mg samples,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):345101; http://ir.semi.ac.cn/handle/172111/22653
Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22653
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Autoren: et al.
Schlagwörter: Quantum Dots, Solar-cells, Growth, Films, Gan, 半导体材料, solar cells, solar generators, development, photography--films, finite volume method, dots, quantum, semiconductor quantum dots, antidots, semiconductor, quantum boxes, semiconductor quantum boxes, semiconductor nanocrystals, semiconductor nanoparticles, cells, solar, photovoltaic solar cells, schottky barrier solar cells, solar batteries, elements electriques de collecteurs d energie solai, photovoltaic cells, photovoltaics, sonnenenergiezellen, silicon solar cells
Relation: JOURNAL OF PHYSICS D-APPLIED PHYSICS; Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X.Behavioural investigation of InN nanodots by surface topographies and phase images,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(44):445306; http://ir.semi.ac.cn/handle/172111/22651
Verfügbarkeit: http://ir.semi.ac.cn/handle/172111/22651
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