Výsledky vyhľadávania - "VAPOR phase epitaxial growth"

(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography

Autori: Eguchi, Masanori Sato, Makoto Saha, Niloy Chandra a ďalší

Zdroj: Journal of Applied Physics; 11/14/2025, Vol. 138 Issue 18, p1-7, 7p

Predmety: MICROCRACKS, GALLIUM compounds, STRAY currents, SCHOTTKY barrier diodes, VAPOR phase epitaxial growth, STACKING faults (Crystals)

225 nm far-UVC LEDs enabled directly on c-sapphire by tailored AlN molar fraction in n-AlGaN layers.

Autori: Kirihara, Taiga Khan, M. Ajmal Sharif, M. Nawaz a ďalší

Zdroj: Journal of Applied Physics; 11/7/2025, Vol. 138 Issue 17, p1-9, 9p

Predmety: ALUMINUM gallium nitride, LIGHT emitting diodes, ELECTRIC conductivity, VAPOR phase epitaxial growth, ELECTROLUMINESCENCE measurement

Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH 3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation.

Autori: Shimazu, Hiroki Nishizawa, Shin-Ichi Nitta, Shugo a ďalší

Zdroj: IEEE Transactions on Semiconductor Manufacturing. May2025, Vol. 38 Issue 2, p311-323. 13p.

Predmety: GALLIUM nitride, VAPOR phase epitaxial growth, CHEMICAL reactors, GAS flow, DIFFUSION kinetics, AMMONIA, SURFACE reactions, CRYSTAL grain boundaries

Preparation Techniques for Perovskite Single Crystal Films: From Nucleation to Growth.

Autori: Zhou, Yawen Liu, Da Gui Yang, Hua a ďalší

Zdroj: Chemistry - An Asian Journal. 2/17/2025, Vol. 20 Issue 4, p1-10. 10p.

Predmety: *VAPOR phase epitaxial growth, *SINGLE crystals, *DISCONTINUOUS precipitation, *METAL halides, *SURFACE defects

Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing.

Autori: Okuda, Tomoya Ota, Shunsuke Kubota, Kouei a ďalší

Zdroj: Applied Physics Letters; 11/3/2025, Vol. 127 Issue 18, p1-7, 7p

Predmety: GALLIUM nitride, HETEROSTRUCTURES, ELECTRON mobility, ELECTRONIC equipment, VAPOR phase epitaxial growth

Ni‐Assisted Endotaxial Growth of Au Nanoparticles Within TiO2 Nanowires.

Autori: Razaghi, Zhina Zhu, Guo‐zhen

Zdroj: Advanced Materials Interfaces; 10/6/2025, Vol. 12 Issue 19, p1-8, 8p

Predmety: GOLD nanoparticles, TITANIUM dioxide, VAPOR phase epitaxial growth, CRYSTAL orientation, NANOPARTICLES, NANOSTRUCTURES

Deep-level point defects at Ga sites in dilute AlxGa1−xN alloys.

Autori: Kruszewski, P. Coutinho, J. Markevich, V. P. a ďalší

Zdroj: Applied Physics Letters; 9/8/2025, Vol. 127 Issue 10, p1-7, 7p

Predmety: POINT defects, GALLIUM alloys, DEEP level transient spectroscopy, ELECTRON traps, VAPOR phase epitaxial growth

Effect of substrate pretreatment on the epitaxial growth of κ-Ga2O3 layers on sapphire by halide vapor phase epitaxy.

Autori: Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia a ďalší

Zdroj: Journal of Crystal Growth. Oct2025, Vol. 668, pN.PAG-N.PAG. 1p.

Predmety: *VAPOR phase epitaxial growth, *WIDE gap semiconductors, *EPITAXY, *SURFACE preparation, *SINGLE crystals, *CORUNDUM, *PHASE transitions

Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect.

Autori: Masut, Remo A.¹

Zdroj: Journal of Applied Physics. 2018, Vol. 124 Issue 9, pN.PAG-N.PAG. 7p. 1 Chart, 2 Graphs.

Predmety: *VAPOR phase epitaxial growth, *ENTHALPY, *ENTROPY, *COMPOUND semiconductors, *N-type semiconductors, *SEMICONDUCTOR doping, *CHEMICAL vapor deposition, *SURFACE reactions

Mechanism for the formation of nitrogen-filled voids after annealing of GaN on a sapphire substrate.

Autori: Matsubara, Tohoru Okada, Narihito Tadatomo, Kazuyuki

Zdroj: Journal of Applied Physics. 2018, Vol. 124 Issue 4, pN.PAG-N.PAG. 4p. 1 Color Photograph, 2 Black and White Photographs, 1 Graph.

Predmety: *GALLIUM nitride films, *VAPOR phase epitaxial growth, *VOIDS (Crystallography), *SAPPHIRES, *SCANNING transmission electron microscopy, *ELECTRON energy loss spectroscopy

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate.

Autori: Narita, Tetsuo Tokuda, Yutaka Kogiso, Tatsuya a ďalší

Zdroj: Journal of Applied Physics. 2018, Vol. 123 Issue 16, pN.PAG-N.PAG. 5p. 1 Diagram, 1 Chart, 4 Graphs.

Predmety: *GALLIUM nitride, *VAPOR phase epitaxial growth, *SILICON carbide, *HOLE traps (Semiconductors), *SEMICONDUCTOR defects, *METAL oxide semiconductor field-effect transistors

Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction.

Autori: Mazzolini, Piero Fogarassy, Zsolt Parisini, Antonella a ďalší

Zdroj: Advanced Functional Materials. 1/10/2023, Vol. 33 Issue 2, p1-14. 14p.

Predmety: *VAPOR phase epitaxial growth, *EPITAXY, *RAMAN spectroscopy

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium.

Autori: Fialho, M. Magalhães, S. Chauvat, M. P. a ďalší

Zdroj: Journal of Applied Physics. 2016, Vol. 120 Issue 16, p165703-1-165703-8. 8p. 1 Black and White Photograph, 1 Chart, 7 Graphs.

Predmety: *VAPOR phase epitaxial growth, *RUTHERFORD backscattering spectrometry, *TRANSMISSION electron microscopy, *CRYSTALLIZATION, *X-ray diffraction

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN.

Autori: In-Hwan Lee Polyakov, A. Y. Smirnov, N. B. a ďalší

Zdroj: Journal of Applied Physics. 5/28/2016, Vol. 119 Issue 20, p205109-1-205109-8. 8p. 1 Black and White Photograph, 1 Chart, 7 Graphs.

Predmety: *HYDRIDE transfer reactions, *VAPOR phase epitaxial growth, *SPECTRUM analysis, *PHOTOCAPACITANCE, *ELECTRON beams

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches.

Autori: Rosenow, Phil Tonner, Ralf

Zdroj: Journal of Chemical Physics. 2016, Vol. 144 Issue 20, p1-7. 7p. 1 Diagram, 2 Charts, 6 Graphs.

Predmety: *VAPOR phase epitaxial growth, *DENSITY functional theory, *HYDROGEN, *SILICON surfaces, *CHEMICAL vapor deposition, *TEMPERATURE effect, *THERMODYNAMICS

Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy.

Autori: Keisuke Yamane Tohoru Matsubara Takeshi Yamamoto a ďalší

Zdroj: Journal of Applied Physics. 2016, Vol. 119 Issue 4, p1-5. 5p. 2 Color Photographs, 1 Chart, 4 Graphs.

Predmety: *HYDRIDES, *VAPOR phase epitaxial growth, *LATTICE constants, *NITRIDES, *SUBSTRATES (Materials science)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures.

Autori: Orejuela, V. García‐Tabares, E. Rey‐Stolle, I. a ďalší

Zdroj: Advanced Electronic Materials; Sep2024, Vol. 10 Issue 9, p1-8, 8p

Predmety: VAPOR phase epitaxial growth, METAL organic chemical vapor deposition, COMPOUND semiconductors, SEMICONDUCTOR materials, SURFACE roughness

Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy.

Autori: Oshima, Yuichi Víllora, Encarnación G. Matsushita, Yoshitaka a ďalší

Zdroj: Journal of Applied Physics. 8/28/2015, Vol. 118 Issue 8, p085301-1-085301-5. 5p. 2 Black and White Photographs, 1 Diagram, 1 Chart, 7 Graphs.

Predmety: *VAPOR phase epitaxial growth, *CRYSTAL growth from vapor, *EPITAXY, *HALIDES, *CRYSTAL growth, *CRYSTAL structure, *X-ray diffraction

Synthesis, characterization of WS2 nanostructures by vapor phase deposition.

Autori: Yinping Fan Jun Li Guolin Hao a ďalší

Zdroj: Journal of Applied Physics. 2015, Vol. 117 Issue 6, p064302-1-064302-6. 6p. 1 Diagram, 5 Graphs.

Predmety: *NANOSTRUCTURES, *VAPOR phase epitaxial growth, *PHOTOLUMINESCENCE, *QUANTUM confinement effects, *ATOMIC force microscopy, *RAMAN spectroscopy

Photoresponse properties of large-area MoS2 atomic layer synthesized by vapor phase deposition.

Autori: Siwei Luo Xiang Qi Long Ren a ďalší

Zdroj: Journal of Applied Physics. 2014, Vol. 116 Issue 16, p164304-1-164304-6. 6p. 4 Graphs.

Predmety: *VAPOR phase epitaxial growth, *PHOTODETECTORS, *SCANNING electron microscopy, *PHOTOLUMINESCENCE, *PHOTOELECTRIC effect