Suchergebnisse - "TOPOLOGICAL insulators"

Thickness dependent spin to charge interconversion efficiency in polycrystalline BiSb layers deposited on Si substrate.

Autoren: Manoj, Talluri Mattela, Venkat Salimath, Akshay Kumar et al.

Quelle: Journal of Applied Physics. 8/7/2025, Vol. 138 Issue 5, p1-9. 9p.

Schlagwörter: *TOPOLOGICAL insulators, *SPINTRONICS, *POLYCRYSTALS, *SPIN-orbit interactions, *THICKNESS measurement, *SILICON wafers, *FERROMAGNETIC resonance

Second-order phononic topological insulators and optimal energy harvesting.

Autoren: Nanthakumar, S. S. Nguyen, Chuong Zhuang, Xiaoying

Quelle: Journal of Applied Physics. 6/7/2025, Vol. 137 Issue 21, p1-10. 10p.

Schlagwörter: *UNIT cell, *TOPOLOGICAL insulators, *ENERGY harvesting, *ELECTRICAL energy, *METAMATERIALS

Realization of the square-root Dirac semimetal in electrical circuits.

Autoren: Song, Lingling Yang, Huanhuan Cao, Yunshan et al.

Quelle: Journal of Applied Physics. 3/28/2025, Vol. 137 Issue 12, p1-8. 8p.

Schlagwörter: *ELECTRIC circuits, *TOPOLOGICAL insulators, *ENERGY bands, *FREQUENCY spectra, *TOPOLOGICAL property

Effects of metal, oxide, and hybrid metal-oxide interlayers on spin–orbit torque in BiSb topological insulator and magnetic interfaces.

Autoren: Le, Quang Liu, Xiaoyong Xu, Lei et al.

Quelle: Journal of Applied Physics. 3/28/2025, Vol. 137 Issue 12, p1-9. 9p.

Schlagwörter: *MAGNETIC insulators, *TOPOLOGICAL insulators, *TORQUE, *METALS, *MAGNESIUM oxide, *SPIN valves

Two-dimensional transition-metal halogenides with Mexican-hat-shaped band as a correlated topological insulator.

Autoren: Hou, Yi-Na Wang, Bo-Jing Jin, Chen-Dong et al.

Quelle: Journal of Applied Physics. 2/14/2025, Vol. 137 Issue 6, p1-7. 7p.

Schlagwörter: *TOPOLOGICAL insulators, *CRYSTALLINE electric field, *TOPOLOGICAL property, *BRILLOUIN zones, *FERMI level

Doping with FeSe greatly enhances mobility in topological insulator Bi2Se3 single crystals.

Autoren: Bannikov, M. I. Selivanov, Yu. G. Martovitskii, V. P. et al.

Quelle: Journal of Applied Physics. 1/21/2025, Vol. 137 Issue 3, p1-9. 9p.

Schlagwörter: *TOPOLOGICAL insulators, *CRYSTAL growth, *SINGLE crystals, *OSCILLATIONS

Modulating the resonance transport of edge states in topological insulator junction.

Autoren: Yang, Jia-En Lü, Xiao-Long Xie, Hang et al.

Quelle: Journal of Applied Physics. 1/7/2025, Vol. 137 Issue 1, p1-9. 9p.

Schlagwörter: *TOPOLOGICAL insulators, *ENERGY bands, *RESONANCE, *NANORIBBONS

Photonic surface Dirac cones in reciprocal magnetoelectric metamaterials.

Autoren: Chern, Ruey-Lin Chou, Yi-Ju Hwang, Robert R.

Quelle: Journal of Applied Physics; 11/28/2025, Vol. 138 Issue 20, p1-10, 10p

Schlagwörter: MAGNETOELECTRONICS, METAMATERIALS, TOPOLOGICAL insulators, BAND gaps, BOUNDARY value problems, MAGNETIC fields

Electronic localization on the structural inhomogeneities formed due to Bi and Te deficiency in the MBE grown films of AF topological insulator MnBi2Te4: Evidence from spectroscopic ellipsometry and infrared studies.

Autoren: Kovaleva, N. N. Chvostova, D. Fursova, T. N. et al.

Quelle: Journal of Chemical Physics; 11/21/2025, Vol. 163 Issue 19, p1-10, 10p

Schlagwörter: ELLIPSOMETRY, DOPING agents (Chemistry), SURFACE roughness, TOPOLOGICAL insulators, TRANSMITTANCE (Physics), CHARGE carriers

Integrating and manipulating topological insulators in pursuit of spintronic and dissipationless applications

Autoren: Fernández Aguirre, Iván

Thesis Advisors: Bonell , Frédéric, Valenzuela Ramello, Sergio Osvaldo, Sort Viñas, Jordi

Quelle: TDX (Tesis Doctorals en Xarxa)

Schlagwörter: Aïllants topològics, Topological insulators, Aislantes topológicos, Grafè, Graphene, Grafeno, Epitaxia per raigs moleculars, Molecular beam epitaxy, Epitaxia por haces moleculares, Ciències Experimentals

Time: 538.9

Dateibeschreibung: application/pdf

Zugangs-URL: http://hdl.handle.net/10803/691729

Majorana fermion induced power-law scaling in the violations of the Wiedemann–Franz law.

Autoren: Mishra, Sachiraj Das, Ritesh Benjamin, Colin

Quelle: Journal of Applied Physics. 12/14/2024, Vol. 136 Issue 22, p1-14. 14p.

Schlagwörter: *LUTTINGER liquids, *TOPOLOGICAL insulators, *INELASTIC scattering, *QUANTUM dots, *PICTURES

Localization and entanglement characterization of edge states in HgTe quantum wells in a finite strip geometry.

Autoren: Calixto, Manuel Castaños, Octavio

Quelle: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 12/10/2025, Vol. 39 Issue 29/30, p1-31. 32p.

Schlagwörter: *TOPOLOGICAL insulators, *LOCALIZATION theory, *QUANTUM wells, *SURFACE states, *SPIN-orbit interactions, *QUANTUM information theory, *QUANTUM entropy

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy.

Autoren: Inoch, Wesley F. Mello, Sergio L. A. Rodrigues‐Junior, Gilberto et al.

Quelle: Advanced Functional Materials. Nov2025, p1. 12p. 7 Illustrations.

Schlagwörter: *MAGNETIC properties, *TOPOLOGICAL insulators, *GALLIUM arsenide, *THIN films, *STOICHIOMETRY, *MOLECULAR beam epitaxy

High‐Performance Photodetection in MoSe2/Bi2Se3/MoTe2 Dual Heterostructure Enabled by Topological Interlayer Design.

Autoren: Xiao, Huijin Pan, Yuting Lu, Lidan et al.

Quelle: Advanced Optical Materials. 11/25/2025, Vol. 13 Issue 33, p1-7. 7p.

Schlagwörter: *PHOTODETECTORS, *TOPOLOGICAL insulators, *MOLYBDENUM, *BISMUTH selenide, *SENSITIVITY analysis, *QUANTUM efficiency, *HETEROSTRUCTURES

Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering.

Autoren: Ishihara, K. Ichinokura, S. Eremeev, S. V. et al.

Quelle: Applied Physics Letters. 11/24/2025, Vol. 127 Issue 21, p1-6. 6p.

Schlagwörter: *ANOMALOUS Hall effect, *TOPOLOGICAL insulators, *HETEROSTRUCTURES, *SILICON, *CURIE temperature

Small but Efficient: Quasi‐1D Topological Insulator β‐Bi4I4 Nanowires as a Saturable Absorber with High Modulation Depth and Broadband Operation.

Autoren: Xing, Xiaowei Han, Yechao Huang, Xiwei et al.

Quelle: Advanced Functional Materials. Nov2025, p1. 10p. 8 Illustrations.

Schlagwörter: *TOPOLOGICAL insulators, *OPTICAL modulation, *NONLINEAR optical techniques, *INTENSITY modulation (Optics), *FEMTOSECOND lasers, *PHOTONICS, *OPTICAL modulators

Observation of nonlinear higher-order topological insulators with unconventional boundary truncations.

Autoren: Huang, Changming Kireev, Alexander V. Jiang, Yuxin et al.

Quelle: Communications Physics. 11/19/2025, Vol. 8 Issue 1, p1-11. 11p.

Schlagwörter: *TOPOLOGICAL insulators, *NONLINEAR optics, *TOPOLOGICAL defects (Physics), *MATHEMATICAL symmetry, *WAVEGUIDES

Preserving intrinsic topological states in Cu-dicyanoanthracene via weakly interacting substrate engineering.

Autoren: Yin, Yiyang Song, Yang Zhang, Lizhi et al.

Quelle: Applied Physics Letters. 11/17/2025, Vol. 127 Issue 20, p1-6. 6p.

Schlagwörter: *DICYANOANTHRACENE, *TOPOLOGICAL insulators, *DENSITY functional theory, *SEMICONDUCTORS, *MOLECULAR dynamics

Hybrid skin-topological-Anderson effect in systems with gain and loss.

Autoren: Li, Shuqiao Dou, Linyuan Zhang, Chenyu et al.

Quelle: Communications Physics. 11/17/2025, Vol. 8 Issue 1, p1-10. 10p.

Schlagwörter: *TOPOLOGICAL insulators, *ANDERSON localization, *METAL-insulator transitions

People: ANDERSON, Jonathan, 1984-

High and magnetic-field-dependent surface carriers mobility in 3D topological insulators without bulk states.

Autoren: Pugachev, M. V. Borisov, A. E. Shupletsov, A. V. et al.

Quelle: Applied Physics Letters. 11/10/2025, Vol. 127 Issue 19, p1-6. 6p.

Schlagwörter: *TOPOLOGICAL insulators, *MAGNETIC fields, *MAGNETORESISTIVE devices, *FERMI level, *MAGNETORESISTANCE