Výsledky vyhledávání - "Silicon Carbide"

Repulsive magnetic field enhanced laser drilling via backside chemical-assisted etching of SiC substrates.

Autoři: Qi, Yiquan Hong, Minghui

Zdroj: Journal of Applied Physics. 11/7/2025, Vol. 138 Issue 17, p1-10. 10p.

Témata: *SILICON carbide, *SEMICONDUCTOR materials, *THERMAL conductivity, *LASER drilling, *MAGNETIC fields, *MICROELECTRONICS

Piezoelectric and structural properties of textured aluminum scandium nitride thin films on SiC substrate.

Autoři: Yan, Xuefei Cao, Jiaqi Fang, Xudong a další

Zdroj: Journal of Applied Physics. 9/21/2025, Vol. 138 Issue 11, p1-9. 9p.

Témata: *ALUMINUM nitride films, *SILICON carbide, *THIN films, *CRYSTALLINITY, *CRYSTAL structure

Group IV binary carbides with double layer honeycomb lattice structure.

Autoři: Faraji, Mehrdad Putatunda, Aditya Schleusener, Alexander a další

Zdroj: Journal of Applied Physics. 8/28/2025, Vol. 138 Issue 8, p1-8. 8p.

Témata: *SILICON carbide, *HONEYCOMB structures, *COVALENT bonds, *PHONONS, *SEMICONDUCTORS, *HETEROJUNCTIONS

Confocal photoluminescence and x-ray photoelectron spectroscopy study of electron irradiation-induced fluorescence from oxidized porous 4H silicon carbide surface.

Autoři: Zhang, Tingwei Ji, Zimo Gao, Zhimin a další

Zdroj: Journal of Applied Physics. 8/28/2025, Vol. 138 Issue 8, p1-10. 10p.

Témata: *POROUS materials, *SILICON carbide, *ELECTRON beams, *IRRADIATION, *PHOTOLUMINESCENCE, *X-ray photoelectron spectroscopy

Phosphorus-doped silicon oxidation for carbon-free SiO2 formation on silicon carbide: Lowering of interface state density.

Autoři: Wang, Zhen-Yu Ding, Cheng-Xi Guo, Yun-Duo a další

Zdroj: Journal of Applied Physics. 8/21/2025, Vol. 138 Issue 7, p1-12. 12p.

Témata: *OXIDATION of silicon carbide, *PHOSPHORUS, *SEMICONDUCTOR materials, *ATOMIC force microscopy, *BAND gaps, *ELECTRIC fields

Enhanced interfacial stability of GaN on SiC through contact orientation and layer tilting.

Autoři: Yang, Chung-Chi Tan, Chih-Shan

Zdroj: Journal of Applied Physics. 7/28/2025, Vol. 138 Issue 4, p1-9. 9p.

Témata: *GALLIUM nitride, *SILICON carbide, *PHONON dispersion relations, *DENSITY functional theory, *HETEROSTRUCTURES, *STRUCTURAL stability, *SURFACE stability

Spall strength of symmetric tilt grain boundaries in 6H silicon carbide.

Autoři: Li, Chunyu Strachan, Alejandro

Zdroj: Journal of Applied Physics. 7/21/2025, Vol. 138 Issue 3, p1-12. 12p.

Témata: *SILICON carbide, *CRYSTAL grain boundaries, *SHEAR strength, *SHOCK waves, *MOLECULAR dynamics, *SURFACE energy

Local carrier concentration variations due to partial dislocations associated with stacking faults in 4H–SiC homoepitaxial layers.

Autoři: Kitahara, Koki Okano, Hirono Senzaki, Junji a další

Zdroj: Journal of Applied Physics. 7/7/2025, Vol. 138 Issue 1, p1-10. 10p.

Témata: *SILICON carbide, *EPITAXIAL layers, *EPITAXY, *DISLOCATION structure, *CRYSTAL defects, *CARRIER density, *NITROGEN, *RAMAN scattering

Simulation of mechanical properties of two-dimensional silicon carbide film with stochastically distributed vacancy defects.

Autoři: Ma, Aihua Wang, Jing

Zdroj: Journal of Chemical Physics. 5/28/2025, Vol. 162 Issue 20, p1-11. 11p.

Témata: *SILICON carbide films, *YOUNG'S modulus, *MOLECULAR dynamics, *FRACTURE strength, *SILICON carbide

A Novel Design of SiC High-Voltage Lateral PiN Diode for IC Application

Autoři: Ma, Xiaofan Ekström, Mattias Zetterling, Carl-Mikael

Zdroj: Key Engineering Materials. :47-52

Témata: High-Voltage Semiconductor Diodes and Integrated Circuit, Lateral PiN Diode, Semiconductor Device Manufacture, Silicon Carbide (SiC)

Popis souboru: print

Přístupová URL adresa: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-372500
https://doi.org/10.4028/p-cQ6d4V

50 Jahre productronica SiC und GaN treiben die Energiewende an.

Zdroj: Elektronik Industrie. 11/12/2025, Issue 11, p38-42. 5p.

Témata: *ELECTRONICS manufacturing, *SUSTAINABLE transportation, GALLIUM nitride, SILICON carbide, POWER electronics, RENEWABLE energy transition (Government policy), SUSTAINABILITY, WIDE gap semiconductors

Geografický termín: MUNICH (Germany)

Macro and Micro-Scale Non-Contact Imaging of Electrically Active Extended Defects in 4H-SiC Merged PiN Schottky Diode Devices.

Autoři: Faisal, Firas Steller, Nils Karhu, Robin a další

Zdroj: IEEE Transactions on Semiconductor Manufacturing. Nov2025, Vol. 38 Issue 4, p744-749. 6p.

Témata: *MANUFACTURING defects, SILICON carbide, SCHOTTKY barrier diodes, OPTICAL imaging sensors

Experimental investigation on subsurface damage characteristics in ultrasonic-assisted grinding of silicon carbide.

Autoři: Li, Hongbo Wang, Haoping He, Chao

Zdroj: Materials & Manufacturing Processes. 2025, Vol. 40 Issue 16, p2231-2239. 9p.

Témata: SILICON carbide, ULTRASONIC machining, FRACTURE mechanics, MATERIAL erosion

Applications of 4H Silicon Carbide Radiation Detectors in Fission and Fusion Reactor Environments.

Autoři: Ruddy, Frank H. Lyoussi, Abdallah Destouches, Christophe a další

Zdroj: EPJ Web of Conferences. 11/6/2025, Vol. 338, p1-6. 6p.

Témata: *SILICON carbide, *FUSION reactors, *RADIATION tolerance, *NEUTRON measurement, *NUCLEAR counters, *NUCLEAR reactors, *SEMICONDUCTOR technology, *HEAT resistant materials

Experimental analysis of Schottky-barrier 4H-SiC-detector-response to fast neutrons: Comparison with Si and diamond detectors.

Autoři: Šagátová, Andrea Slavíček, Tomáš Mihai, Radu Emanuel a další

Zdroj: EPJ Web of Conferences. 11/6/2025, Vol. 338, p1-5. 5p.

Témata: *FAST neutrons, *SILICON carbide, *NUCLEAR reactions, *NUCLEAR counters, *SILICON detectors, *SIGNAL detection

Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts.

Autoři: Kurucová, Nikola Šagatová, Andrea Zaťko, Bohumír a další

Zdroj: EPJ Web of Conferences. 11/6/2025, Vol. 338, p1-6. 6p.

Témata: *SILICON carbide, *P-N junctions (Semiconductors), *SCHOTTKY barrier diodes, *RADIATION measurements, *DARK currents (Electric), *EPITAXIAL layers, *ALPHA ray spectrometry, *ELECTRIC properties

Evaluation of 4H-SiC sensor performances for thermal neutron flux measurements.

Autoři: Llido, Olivier Destouches, Christophe Lyoussi, Abdallah a další

Zdroj: EPJ Web of Conferences. 11/6/2025, Vol. 338, p1-8. 8p.

Témata: *NEUTRON flux, *SILICON carbide, *DIODES, *RADIATION tolerance, *FAILURE analysis, *NEUTRON counters

Silicon carbide neutron detectors for reactor monitoring in subcritical conditions.

Autoři: Radulović, Vladimir Makino, Takahiro Bisiach, Danilo

Zdroj: EPJ Web of Conferences. 11/6/2025, Vol. 338, p1-6. 6p.

Témata: *SILICON carbide, *NEUTRON flux, *NEUTRON counters, *RADIATION measurements, *NUCLEAR reactors, *SCHOTTKY barrier diodes, *NUCLEAR counters

Characterization and evaluation of mechanical properties of aluminium metal matrix composite.

Autoři: Kashyap, Naman Shrivastava, Lakshya Mittal, Neelmani a další

Zdroj: AIP Conference Proceedings. 2025, Vol. 3297 Issue 1, p1-10. 10p.

Témata: *SILICON carbide, *TENSILE strength, *HARDNESS, *WEAR resistance, *METALLIC composites, *MECHANICAL behavior of materials, *MICROSTRUCTURE

Giant ferroelectric polarization and multiferroicity of two-dimensional hydrofluorinated SiC.

Autoři: Wang, Zhao Li, Zhenqing Li, Jin a další

Zdroj: Journal of Applied Physics; 11/28/2025, Vol. 138 Issue 20, p1-8, 8p

Témata: FERROELECTRIC materials, POLARIZATION (Electricity), SILICON carbide, TWO-dimensional materials (Nanotechnology), CRYSTAL lattices