Search Results - "SiH₄ doping source"

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Authors: Gamze Yolcu İlkay Demir

Source: Volume: 46, Issue: 2390-395
Cumhuriyet Science Journal

Subject Terms: MOVPE method, SiH₄ doping source, epitaxial growth, carrier density, n AlₓGa₁₋ₓAs layers, Lasers and Quantum Electronics, Photonics, Optoelectronics and Optical Communications, Lazerler ve Kuantum Elektroniği, Fotonik, Optoelektronik ve Optik İletişim

File Description: application/pdf

Access URL: https://dergipark.org.tr/tr/pub/csj/issue/93334/1672625