Výsledky vyhľadávania - "SAPPHIRES"

Three‐dimensional spectral and spatial resolution of raman measurements in sapphire.

Autori: Bellafatto, A. Reimanis, I. E.

Zdroj: Journal of the American Ceramic Society. Dec2025, Vol. 108 Issue 12, p1-8. 8p.

Predmety: *RAMAN spectroscopy, *SAPPHIRES, *SCIENTIFIC method, *RESIDUAL stresses, *SPECTRUM analysis

The Pace di Siena and its Gems.

Autori: Martiniello, Stefania Mangani, Simi Maria Emilia Legnaioli, Stefano a ďalší

Zdroj: Journal of Raman Spectroscopy. Nov2025, Vol. 56 Issue 11, p1254-1278. 25p.

Predmety: *SAPPHIRES, *SPINEL group, *MINERALOGY, *GEMS & precious stones, *ART history, *ENAMEL & enameling, *CULTURAL property, *ART objects

Geografický termín: SIENA (Italy), SRI Lanka, ITALY

Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates.

Autori: Padzialioshkina, Liubou Kirchbrücher, Arno Shu, Qi a ďalší

Zdroj: Applied Physics Letters. 10/23/2025, Vol. 127 Issue 17, p1-7. 7p.

Predmety: *CHEMICAL vapor deposition, *SAPPHIRES, *EPITAXY, *SURFACE morphology, *OHMIC contacts

Femtosecond-Laser Writing of Microbits for Luminescent Memory in Sapphire.

Autori: Danilov, P. A. Gorevoy, A. V. Matyaev, I. D. a ďalší

Zdroj: JETP Letters. Oct2025, Vol. 122 Issue 7, p397-404. 8p.

Predmety: *FEMTOSECOND lasers, *SAPPHIRES, *CHROMIUM ions, *MICROSTRUCTURE, *MICROFABRICATION, *LASER pulses

Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion.

Autori: Okada, Narihito Hidaka, Ryota Kowaki, Taketo a ďalší

Zdroj: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-8. 8p.

Predmety: *UMPOLUNG, *SAPPHIRES, *TRANSMISSION electron microscopy, *DISLOCATION density, *SUBSTRATES (Materials science)

InN/InAlN heterostructures for new generation of fast electronics.

Autori: Kuzmik, J. Stoklas, R. Hasenöhrl, S. a ďalší

Zdroj: Journal of Applied Physics. 6/28/2024, Vol. 135 Issue 24, p1-8. 8p.

Predmety: *SAPPHIRES, *HETEROSTRUCTURES, *CHEMICAL vapor deposition, *EDGE dislocations, *ELECTRON mobility, *TRANSMISSION electron microscopy

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE.

Autori: Pampili, Pietro Pristovsek, Markus

Zdroj: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-10. 10p.

Predmety: *SAPPHIRES, *SURFACE morphology, *NITRIDATION, *EPITAXY

Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing.

Autori: Ogawa, Yuki Akaike, Ryota Hayama, Jiei a ďalší

Zdroj: Journal of Applied Physics. 5/21/2024, Vol. 135 Issue 19, p1-11. 11p.

Predmety: *SAPPHIRES, *CRYSTAL orientation, *AB-initio calculations, *ALUMINUM nitride, *INTERFACE stability, *SURFACE morphology

Compact high-Q Ka-band sapphire distributed Bragg resonator.

Autori: Iltchenko, Vladimir Wang, Rabi Toennies, Michael a ďalší

Zdroj: Journal of Applied Physics. 4/14/2024, Vol. 135 Issue 14, p1-8. 8p.

Predmety: *SAPPHIRES, *DIELECTRIC loss, *DIELECTRIC materials, *RESONATORS, *WHISPERING gallery modes, *CURTAIN walls, *PHOTONIC crystal fibers

Sn-assisted epitaxial growth of high-crystallinity κ/ε-Ga2O3 on sapphire (0001) by low-pressure Mist-CVD.

Autori: Wang, Yan Xie, Zhigao Guan, Yizhang a ďalší

Zdroj: Applied Physics Letters. 9/8/2025, Vol. 127 Issue 10, p1-6. 6p.

Predmety: *EPITAXY, *SAPPHIRES, *GALLIUM compounds, *POLYMORPHISM (Crystallography), *POWER electronics

2nd BRANKOGEMS CONFERENCE AND FIELD TRIPS.

Autori: Emms, Eric ericemms@aol.com

Zdroj: Journal of Gemmology. 2025, Vol. 39 Issue 7, p700-703. 4p.

Predmety: *SAPPHIRES, *CONFERENCES & conventions, *LECTURES & lecturing, *EXCURSIONS (Travel), *GEMOLOGY, *JEWELRY industry

Geografický termín: UNITED States, MONTANA, HELENA (Mont.)

Age Dating of Gem-quality Zircon and Sapphire from the New England Gem Fields, New South Wales, Australia, and its Application to the Geological Origin of the Sapphires.

Autori: Abduriyim, Ahmadjan ‘Lin’ Sutherland, Frederick Coldham, Terry a ďalší

Zdroj: Journal of Gemmology. 2025, Vol. 39 Issue 7, p656-671. 16p.

Predmety: *ZIRCON, *SAPPHIRES, *URANIUM-lead dating, *ALKALIC igneous rocks, *GEOLOGICAL formations, *GEOLOGICAL time scales, *CORUNDUM

Geografický termín: AUSTRALIA, NEW South Wales

Low-temperature synthesis of high-quality graphene by methane plasma annealing of graphene oxide.

Autori: Jia, Siyu Ueda, Kenji

Zdroj: Journal of Applied Physics; 6/28/2025, Vol. 137 Issue 24, p1-9, 9p

Predmety: GRAPHENE oxide, GRAPHENE synthesis, CATALYSIS, CHARGE carrier mobility, GRAPHENE, SAPPHIRES

Semipolar (11-22) AlN templates prepared by pulsed hydride vapor phase epitaxy.

Autori: Fang, Chunlei Wang, Hao Ji, Jianli a ďalší

Zdroj: Journal of Applied Physics; 5/14/2025, Vol. 137 Issue 18, p1-8, 8p

Predmety: CRYSTAL orientation, SUBSTRATES (Materials science), OPTOELECTRONIC devices, SURFACE morphology, EPITAXY, SAPPHIRES

Sub-bandgap optical absorption processes in 300-nm-thick Al1−xInxN alloys grown on a c-plane GaN/sapphire template.

Autori: Imai, Daichi Murakami, Yuto Toyoda, Hayata a ďalší

Zdroj: Journal of Applied Physics. 1/21/2024, Vol. 135 Issue 3, p1-8. 8p.

Predmety: *SAPPHIRES, *LIGHT absorption, *ALLOYS, *SURFACE emitting lasers, *CHEMICAL vapor deposition, *PHOTOTHERMAL spectroscopy, *INDIUM

Grain size in low loss superconducting Ta thin films on c axis sapphire.

Autori: Jones, Sarah Garcia Materise, Nicholas Leung, Ka Wun a ďalší

Zdroj: Journal of Applied Physics. 10/14/2023, Vol. 134 Issue 14, p1-8. 8p.

Predmety: *GRAIN size, *SAPPHIRES, *THIN films, *SUPERCONDUCTORS, *SUPERCONDUCTING circuits, *QUANTUM computing

Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films.

Autori: Snure, Michael Blanton, Eric W. Soukhoveev, Vitali a ďalší

Zdroj: Journal of Applied Physics. 7/14/2023, Vol. 134 Issue 2, p1-11. 11p.

Predmety: *ELECTRON energy loss spectroscopy, *SAPPHIRES, *SCANNING transmission electron microscopy, *GALLIUM nitride, *ATOMIC force microscopy, *BORON nitride

Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing.

Autori: Peters, Lukas Sergeev, Dmitry Margenfeld, Christoph a ďalší

Zdroj: Journal of Applied Physics. 6/21/2023, Vol. 133 Issue 23, p1-8. 8p.

Predmety: *MASS spectrometry, *SAPPHIRES, *EPITAXY, *PARTIAL pressure, *ARGON, *SURFACE contamination

Mist CVD Grown High-Phase-Purity α-Ga2O3 and Its Photoresponse Performance.

Autori: YAO Suhao ZHANG Maolin JI Xueqiang a ďalší

Zdroj: Journal of Synthetic Crystals. Feb2025, Vol. 54 Issue 2, p233-243. 11p.

Predmety: *THIN films, *SAPPHIRES, *CHEMICAL vapor deposition, *TEMPERATURE control, *POWER electronics, *EPITAXY, *FERROELECTRIC thin films

Gold-sheen Sapphire from Basaltic Lavas, Changle, Shandong Province, China.

Autori: Shiying Wang Yan Li Che Shen

Zdroj: Journal of Gemmology. 2025, Vol. 39 Issue 5, p450-465. 16p.

Predmety: *FLUID inclusions, *SAPPHIRES, *ILMENITE, *CENOZOIC Era, *BASALT