Suchergebnisse - "ReRAM Cell Programming"

System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena

Autoren: Ascoli A Tetzlaff R Menzel S et al.

Quelle: 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS). :1-6

Schlagwörter: Resistance Switching, Non-volatile Memory Devices, ReRAM Cells, Memristive Devices, Nonlinear Dynamics, Fading Memory, System Theory, Dynamic Route Map, ReRAM Cell Programming, In-Memory Computing

Dateibeschreibung: application/pdf

Zugangs-URL: https://ieeexplore.ieee.org/document/9665611
https://hdl.handle.net/11583/2988507
https://doi.org/10.1109/ICECS53924.2021.9665611