Suchergebnisse - "RUTHERFORD backscattering spectrometry"

Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 μm.

Autoren: Webster, Preston T. Carrasco, Rigo A. Newell, Alexander T. et al.

Quelle: Journal of Applied Physics. 2/14/2025, Vol. 137 Issue 6, p1-9. 9p.

Schlagwörter: *MOLECULAR beam epitaxy, *RUTHERFORD backscattering spectrometry, *MOLE fraction, *SURFACE morphology, *REDUCTION potential

Iron beam analysis at LEMA-IFUNAM.

Autoren: García-Flores, A. Huerta, A. Marín-Lámbarri, D.J. et al.

Quelle: EPJ Web of Conferences. 8/1/2025, Vol. 333, p1-7. 7p.

Schlagwörter: *ION beams, *RUTHERFORD backscattering spectrometry, *RESEARCH departments, *MASS spectrometry, *ISOTOPES, *ISOTOPIC analysis, *MAGNETIC properties

Firma/Körperschaft: UNIVERSIDAD Nacional Autonoma de Mexico

Characterization of thin ^natSi targets.

Autoren: Fuentes-Carreón, J.R. Mas-Ruiz, J. Marín-Lámbarri, D.J. et al.

Quelle: EPJ Web of Conferences. 8/1/2025, Vol. 333, p1-6. 6p.

Schlagwörter: *NUCLEAR physics, *RUTHERFORD backscattering spectrometry, *COULOMB barriers (Nuclear fusion), *SILICON films, *NUCLEOSYNTHESIS, *NUCLEAR reactions, *ACCELERATOR mass spectrometry

Determining the stopping power of low energy hydrogen in self-assembled monolayers.

Autoren: Alfayfi, Yahya A. Alharbi, Ahlam R. M. Craig, Vincent S. J. et al.

Quelle: Journal of Applied Physics; 9/28/2025, Vol. 138 Issue 12, p1-13, 13p

Schlagwörter: ION scattering, X-ray photoelectron spectroscopy, MONTE Carlo method, RUTHERFORD backscattering spectrometry, HYDROCARBONS, SOLAR cells

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing.

Autoren: Steuer, O. Michailow, M. Hübner, R. et al.

Quelle: Journal of Applied Physics. 8/14/2024, Vol. 136 Issue 6, p1-9. 9p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *MOLECULAR beam epitaxy, *ION implantation, *CHEMICAL vapor deposition, *EPITAXY

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing.

Autoren: Steuer, O. Schwarz, D. Oehme, M. et al.

Quelle: Journal of Applied Physics. 8/7/2024, Vol. 136 Issue 5, p1-10. 10p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *LASER annealing, *MOLECULAR beam epitaxy, *THIN films, *CARRIER density, *SECONDARY ion mass spectrometry

The effects of co-implanting strontium (Sr) and helium (He) into SiC at temperatures exceeding the critical amorphization temperature and annealing above 1000 oC.

Autoren: Hlatshwayo, T.T. Mokgadi, T.F. Ntshangase, S.S. et al.

Quelle: Ceramics International. Jul2025:Part A, Vol. 51 Issue 18, p24574-24582. 9p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *POLYCRYSTALLINE silicon, *ATOMIC force microscopy, *TRANSMISSION electron microscopy, *SCANNING electron microscopy

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Autoren: Gann, Katie R. Pieczulewski, Naomi Gorsak, Cameron A. et al.

Quelle: Journal of Applied Physics. 1/7/2024, Vol. 135 Issue 1, p1-10. 10p.

Schlagwörter: *SCANNING transmission electron microscopy, *RUTHERFORD backscattering spectrometry, *MOLECULAR beam epitaxy, *LOW temperatures

Production and characterisation of molybdenum/HOPG thin targets for the NUMEN experiment.

Autoren: Fisichella, M. Massara, A. Giovannini, M. et al.

Quelle: European Physical Journal A -- Hadrons & Nuclei. Jun2025, Vol. 61 Issue 6, p1-7. 7p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *PYROLYTIC graphite, *PHYSICAL & theoretical chemistry, *PHYSICAL sciences, *SUBSTRATES (Materials science)

Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization.

Autoren: Lim, S. Q. Huston, L. Q. Smillie, L. A. et al.

Quelle: Journal of Applied Physics. 6/21/2023, Vol. 133 Issue 23, p1-10. 10p.

Schlagwörter: *PLASMA-enhanced chemical vapor deposition, *RUTHERFORD backscattering spectrometry, *SILICON nitride films, *X-ray diffraction, *BUFFER layers, *TRANSMISSION electron microscopy, *LATTICE constants

Tuning light emission in Bi and V codoped MgAl2O4 nanostructured films.

Autoren: Gorni, G. Serna, R. García-López, J. et al.

Quelle: Ceramics International. Mar2025, Vol. 51 Issue 6, p6976-6984. 9p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *PULSED laser deposition, *THIN film deposition, *THIN films, *INFRARED spectroscopy

Ultra-Thin Plastic Scintillator-Based Proton Detector for Timing Applications.

Autoren: Ramos, Mauricio Rodríguez López, Javier García Seimetz, Michael et al.

Quelle: Sensors (14248220). Feb2025, Vol. 25 Issue 3, p971. 23p.

Schlagwörter: *CHARGED particle accelerators, *RUTHERFORD backscattering spectrometry, *JOB applications, *PHOTOMULTIPLIERS, *ENERGY dissipation, *SCINTILLATORS

Non-Invasive Raman and XRF Study of Mīnā'ī Decoration, the First Sophisticated Painted Enamels.

Autoren: Colomban, Philippe Simsek Franci, Gulsu Ngo, Anh-Tu et al.

Quelle: Materials (1996-1944). Feb2025, Vol. 18 Issue 3, p575. 24p.

Schlagwörter: *PROTON-induced X-ray emission, *RUTHERFORD backscattering spectrometry, *CASSITERITE, *X-ray fluorescence, *RAMAN spectroscopy, *RUBIDIUM

Structural characterization of non-continuous nanometric Pt films by angle resolved X-ray photoelectron spectroscopy.

Autoren: Trombini, H. Selau, F. F. Basso, C. W. et al.

Quelle: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Jan/Feb2025, Vol. 180 Issue 1/2, p190-208. 19p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *X-ray photoelectron spectroscopy, *ELECTRON spectroscopy, *ION scattering, *ELECTRON backscattering

Annealing-Driven Optical and Structural Modulation in Ag-C60 Nanocomposites for Surface Plasmon Enhancement.

Autoren: Salim, Amena Vishnoi, Ritu Singhal, Rahul

Quelle: Plasmonics; Oct2025, Vol. 20 Issue 10, p8547-8557, 11p

Schlagwörter: SURFACE plasmon resonance, OPTICAL properties, NANOCOMPOSITE materials, RAPID thermal processing, TRANSMISSION electron microscopy, RUTHERFORD backscattering spectrometry, RAMAN spectroscopy

Tailoring resistive switching in epitaxial SrCoO2.5 films by irradiation induced uniaxial strain.

Autoren: Xiang, Xuepeng Rao, Jingjing He, Zuyun et al.

Quelle: Journal of Applied Physics. 7/21/2022, Vol. 132 Issue 3, p1-8. 8p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *THIN film devices, *THIN films, *OXIDE coating, *IRRADIATION

Characterization of thin ^natSi targets.

Autoren: Fuentes-Carreón, J.R. Mas-Ruiz, J. Marín-Lámbarri, D.J. et al.

Quelle: EPJ Web of Conferences; 8/1/2025, Vol. 333, p1-6, 6p

Schlagwörter: NUCLEAR physics, RUTHERFORD backscattering spectrometry, COULOMB barriers (Nuclear fusion), SILICON films, NUCLEOSYNTHESIS, NUCLEAR reactions, ACCELERATOR mass spectrometry

Structural and electrical properties of high energy ion beam Ag irradiated Bi/Se bilayer.

Autoren: Das, Anil K. Bala, Manju Singh, Vikram et al.

Quelle: AIP Conference Proceedings. 2024, Vol. 3149 Issue 1, p1-6. 6p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *SEEBECK coefficient, *THERMOELECTRIC effects, *HALL effect, *THERMOELECTRIC power, *ION beams, *NARROW gap semiconductors

Structural and electrical properties of low energy ion beam Kr irradiated Bi/Se bilayer.

Autoren: Das, Anil K. Bala, Manju Singh, Vikram et al.

Quelle: AIP Conference Proceedings. 2024, Vol. 3149 Issue 1, p1-6. 6p.

Schlagwörter: *RUTHERFORD backscattering spectrometry, *SEEBECK coefficient, *HALL effect, *THERMOELECTRIC effects, *THERMOELECTRIC power, *ION beams

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing.

Autoren: Steuer, O. Michailow, M. Hübner, R. et al.

Quelle: Journal of Applied Physics; 8/14/2024, Vol. 136 Issue 6, p1-9, 9p

Schlagwörter: RUTHERFORD backscattering spectrometry, MOLECULAR beam epitaxy, ION implantation, CHEMICAL vapor deposition, EPITAXY