Suchergebnisse - "PHOTODETECTORS"

Demonstration of a 5.5 μm cutoff event-based sensor pixel and evaluation of sensitivity in the event-based and framing paradigms.

Autoren: Alsaad, Z. M. Morath, C. P. Newell, A. T. et al.

Quelle: Journal of Applied Physics. 11/28/2025, Vol. 138 Issue 20, p1-8. 8p.

Schlagwörter: *PHOTODETECTORS, *ELECTRIC power consumption, *WAVELENGTHS, *VOLTAGE, *PHOTORECEPTORS

Conduction mechanism modulation in ZnO nanowire networks for enhanced UV photosensitivity.

Autoren: Ergun, Ridvan Canning, Harry Gallant, Andrew J. et al.

Quelle: Journal of Applied Physics. 10/28/2025, Vol. 138 Issue 16, p1-7. 7p.

Schlagwörter: *ZINC oxide, *PHOTODETECTORS, *NANOWIRES, *CHEMISORPTION, *PHOTOCHEMISTRY

Sensitivity assessment of 4.8 μm cutoff GaInAsSbBi nBn photodetectors for mid-wave infrared sensing applications.

Autoren: Carrasco, Rigo A. Webster, Preston T. Newell, Alexander T. et al.

Quelle: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-8. 8p.

Schlagwörter: *PHOTODETECTORS, *MOLECULAR beam epitaxy, *SPECTRAL irradiance, *QUANTUM efficiency, *VALENCE bands

Spatially resolved photoresponse in both lateral and vertical directions of InGaAs photodetector.

Autoren: Huang, Zhengdong Meng, Jiayu Yuan, Youneng et al.

Quelle: Journal of Applied Physics. 9/21/2025, Vol. 138 Issue 11, p1-6. 6p.

Schlagwörter: *PHOTODETECTORS, *INDIUM gallium arsenide, *LIGHT absorption, *LASER beams, *PHOTOELECTRIC devices

Enhanced near ultraviolet (UV) photodetection using PLD-grown ZnO/Ga2O3/ZnO epistructure on n-Si (100) substrate.

Autoren: Kadam, Vaibhav Jejurikar, Suhas M. Shinde, Shashikant D. et al.

Quelle: Journal of Applied Physics. 9/14/2025, Vol. 138 Issue 10, p1-9. 9p.

Schlagwörter: *PHOTODETECTORS, *ZINC oxide, *ULTRAVIOLET radiation, *SEMICONDUCTORS, *BAND gaps, *OPTOELECTRONICS

Influence of buffer layer on the performance of ZnO film based photoconductive detectors.

Autoren: Hong, Peiqin Wu, Leyao Shi, Xinnan et al.

Quelle: Journal of Applied Physics. 8/7/2025, Vol. 138 Issue 5, p1-8. 8p.

Schlagwörter: *ZINC oxide, *PHOTODETECTORS, *BUFFER layers, *SILICA, *COPPER oxide, *HETEROSTRUCTURES, *OPTOELECTRONICS

Enhanced near-infrared photodetection via exciton–plasmon coupling in Ag nanoparticle decorated MoS2/Si-nanowire hybrid.

Autoren: Pramanik, Mousumi Sinha, Pritam Singha, Achintya et al.

Quelle: Journal of Applied Physics. 7/7/2025, Vol. 138 Issue 1, p1-12. 12p.

Schlagwörter: *PHOTODETECTORS, *SILVER nanoparticles, *SILICON nanowires, *MOLYBDENUM disulfide, *EXCITON theory, *LIGHT absorption, *LIGHT matter interaction (Quantum optics), *NEAR infrared radiation

Intraband Optical Absorption in Type-II GaAsSb/InGaAs DQW Heterostructure for Detection of Low Energetic Radiations.

Autoren: Quraishi, A. M. Alharbi, Omar Ali Kirmani, S. A. K.

Quelle: Fiber & Integrated Optics. 2025, Vol. 44 Issue 6, p589-610. 22p.

Schlagwörter: LIGHT absorption, PHOTODETECTORS, INFRARED absorption, ABSORPTION spectra, SOFT X rays, QUANTUM well devices, HETEROSTRUCTURES

Silver nanowire-assisted photothermoelectric enhancement in Ag nanowire/PEDOT:PSS composite films.

Autoren: Xiao, Suzhen Liu, Mengting Liu, Jing et al.

Quelle: Journal of Applied Physics; 10/21/2025, Vol. 138 Issue 15, p1-9, 9p

Schlagwörter: SILVER nanoparticles, THERMOELECTRIC conversion, METALLIC films, PHOTODETECTORS, SULFONATES

Enhancing the performance of photoelectrochemical photodetector based on ZnO films by adjusting interfacial barrier.

Autoren: Cheng, Yaru Zhang, Lianchen Zhai, Runlong et al.

Quelle: Journal of Materials Science. Dec2025, Vol. 60 Issue 45, p22776-22785. 10p.

Schlagwörter: *ZINC oxide films, *PHOTODETECTORS, *POTENTIAL barrier, *METALLIC films, *PHOTOCURRENTS, *PHOTOELECTROCHEMISTRY, *ELECTROPLATING, *OHMIC contacts

In Situ Selenization‐Engineered PtSe2/PdSe2 Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission.

Autoren: Kang, Jinyu Zu, Shengyan Ke, Shaoqiu et al.

Quelle: Advanced Optical Materials. Nov2025, p1. 13p. 6 Illustrations.

Schlagwörter: *PHOTODETECTORS, *INFRARED imaging, *MATERIALS science, *HETEROSTRUCTURES, *SELENIUM, *PALLADIUM, *OPTICAL polarization

Heterostructure‐Based Self‐Powered 2D Photodetectors: Devices and Applications.

Autoren: Sun, Yihong Chen, Jiwei Sun, Yueyi et al.

Quelle: Laser & Photonics Reviews. Nov2025, p1. 25p. 22 Illustrations.

Schlagwörter: *TWO-dimensional materials (Nanotechnology), *PHOTODETECTORS, *OPTOELECTRONICS, *P-N junctions (Semiconductors), *ENERGY harvesting, *PHYSICS

Gate‐Tunable Te‐WSe2 Heterojunction Diodes for Polarization Detection and Logic Operation Application.

Autoren: Zhao, Qixiao Xia, Mengjia Ma, Xinyu et al.

Quelle: Small Methods. Nov2025, p1. 9p. 6 Illustrations.

Schlagwörter: *OPTOELECTRONICS, *PHOTODETECTORS, *BOOLEAN functions, *POLARIZATION spectroscopy, *HETEROSTRUCTURES, *TWO-dimensional materials (Nanotechnology), *HETEROJUNCTIONS

Enhanced Carrier Transport and Photoresponse in Ga2O3 Solar‐Blind Photodetectors via Se‐Induced Valence Band Modulation.

Autoren: Zhao, Xiang Zhu, Hengxi Chen, Kai et al.

Quelle: Advanced Optical Materials. Nov2025, p1. 9p. 6 Illustrations.

Schlagwörter: *PHOTODETECTORS, *SELENIUM compounds, *OPTOELECTRONICS, *VALENCE bands, *CHARGE transfer, *GALLIUM compounds, *ULTRAVIOLET radiation

Enhanced Performance of Giant Power Exponent Superlinear Photodetectors Based on ZnS/MgS Core–Shell Quantum Dots.

Autoren: Yu, Chunyu Li, Shunxin Ning, Jiajia

Quelle: Laser & Photonics Reviews. Nov2025, p1. 10p. 5 Illustrations.

Schlagwörter: *PHOTODETECTORS, *QUANTUM dots, *OPTOELECTRONIC devices, *RESPONSIVITY (Detectors), *QUANTUM efficiency, *DURABILITY, *FLEXIBILITY (Mechanics), *ULTRAVIOLET detectors

Enhanced photoresponse in Type-II MoSe2/WS2 layered heterostructures.

Autoren: Praisudan, S. Kathirvel, P. Gopal Ram, S.D.

Quelle: Ceramics International. Nov2025:Part C, Vol. 51 Issue 28, p59678-59686. 9p.

Schlagwörter: *OPTOELECTRONIC devices, *PHOTODETECTORS, *CHARGE carrier mobility, *CONDUCTION bands, *SULFIDES, *HETEROJUNCTIONS, *TWO-dimensional materials (Nanotechnology), *MOLYBDENUM selenides

2D Ruddlesden‐Popper Perovskite Photodetector with 0.1 pA Dark Current Enabled by Asymmetric Schottky Contacts.

Autoren: Luo, Yiyun Yan, Tingting Zhang, Xinglong et al.

Quelle: Advanced Optical Materials. 11/25/2025, Vol. 13 Issue 33, p1-10. 10p.

Schlagwörter: *PEROVSKITE, *PHOTODETECTORS, *DARK currents (Electric), *PEROVSKITE analysis, *OPTOELECTRONICS, *SCHOTTKY barrier

Ultrafast Fully Depleted SnSe2/MoTe2/SnSe2 Heterostructure Photodetector for Near‐Infrared Next‐Generation Automatic Obstacle Avoidance Systems.

Autoren: Wang, Ge Liu, Wenqi Zhou, Kaiyue et al.

Quelle: Advanced Optical Materials. 11/25/2025, Vol. 13 Issue 33, p1-12. 12p.

Schlagwörter: *PHOTODETECTORS, *NEAR infrared radiation, *DETECTION algorithms, *PICOSECOND pulses, *OBSTACLE avoidance (Robotics), *HETEROSTRUCTURES, *TWO-dimensional materials (Nanotechnology)

High‐Performance Photodetection in MoSe2/Bi2Se3/MoTe2 Dual Heterostructure Enabled by Topological Interlayer Design.

Autoren: Xiao, Huijin Pan, Yuting Lu, Lidan et al.

Quelle: Advanced Optical Materials. 11/25/2025, Vol. 13 Issue 33, p1-7. 7p.

Schlagwörter: *PHOTODETECTORS, *TOPOLOGICAL insulators, *MOLYBDENUM, *BISMUTH selenide, *SENSITIVITY analysis, *QUANTUM efficiency, *HETEROSTRUCTURES

A Bio‐Electronic Hybrid Solid–Liquid Pixelated Color Image Sensor Array as a Direct‐to‐Display Artificial Retina Emulator.

Autoren: Joseph, Ebin Leonardi, Claudio Di Nunzio, Luca et al.

Quelle: Advanced Materials Technologies. Nov2025, p1. 18p. 9 Illustrations.

Schlagwörter: *ARTIFICIAL vision, *PHOTODETECTORS, *IMAGE sensors, *BIOCOMPATIBILITY, *BIOLOGICAL interfaces, *IMAGE color analysis