Suchergebnisse - "Non-volatile memory devices"

Recent advances in ferroelectric materials, devices, and in-memory computing applications

Autoren: Hwiho Hwang Sangwook Youn Hyungjin Kim

Quelle: Nano Convergence, Vol 12, Iss 1, Pp 1-31 (2025)

Schlagwörter: Ferroelectric thin films, Non-volatile memory devices, In-memory computing, Neuromorphic computing, Hardware security, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2196-5404

Zugangs-URL: https://doaj.org/article/5413daaeac9647c69c932378e530adf0

Phase-Change Memory from Molecular Tellurides

Autoren: Schenk, Florian M. Zellweger, Till Kumaar, Dhananjeya et al.

Quelle: ACS Nano
ACS Nano, 18 (1)

Schlagwörter: tellurides, thin films, solution-based engineering, non-volatile memory devices, phase-change materials

Dateibeschreibung: application/application/pdf

Zugangs-URL: https://pubmed.ncbi.nlm.nih.gov/38117038
http://hdl.handle.net/20.500.11850/654822

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films via Novel Interface Layer Approach.

Autoren: Kim, Ji Soo Gaggio, Benedetta Bakhit, Babak et al.

Schlagwörter: epitaxial films, ferroelectrics, hafnia, non‐volatile memory devices

Dateibeschreibung: application/pdf

Relation: https://www.repository.cam.ac.uk/handle/1810/391284; https://doi.org/10.17863/CAM.122468

Verfügbarkeit: https://www.repository.cam.ac.uk/handle/1810/391284
https://doi.org/10.17863/CAM.122468

System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena

Autoren: Ascoli A Tetzlaff R Menzel S et al.

Quelle: 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS). :1-6

Schlagwörter: Resistance Switching, Non-volatile Memory Devices, ReRAM Cells, Memristive Devices, Nonlinear Dynamics, Fading Memory, System Theory, Dynamic Route Map, ReRAM Cell Programming, In-Memory Computing

Dateibeschreibung: application/pdf

Zugangs-URL: https://ieeexplore.ieee.org/document/9665611
https://hdl.handle.net/11583/2988507
https://doi.org/10.1109/ICECS53924.2021.9665611

Phase-Change Memory from Molecular Tellurides

Autoren: Schenk, Florian M. Zellweger, Till id_orcid:0 000-0001-9402-8917 et al.

Quelle: ACS Nano, 18 (1)

Schlagwörter: thin films, phase-change materials, tellurides, solution-based engineering, non-volatile memory devices

Dateibeschreibung: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/001139472300001; info:eu-repo/grantAgreement/EC/H2020/852751; http://hdl.handle.net/20.500.11850/654822

Verfügbarkeit: https://hdl.handle.net/20.500.11850/654822
https://doi.org/10.3929/ethz-b-000654822

Energy Efficient Hardware Implementation of Neural Networks Using Emerging Non-Volatile Memory Devices

Autoren: Oh, Sangheon

Schlagwörter: Applied physics, Electrical engineering, Emerging Non-Volatile Memory Devices, Energy Efficiency, Neural Networks, Neuromorphic Computing, RRAM

Dateibeschreibung: application/pdf

Zugangs-URL: https://escholarship.org/uc/item/9pv7t482
https://escholarship.org/content/qt9pv7t482/qt9pv7t482.pdf

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach

Autoren: Kim, Ji Soo Gaggio, Benedetta Bakhit, Babak et al.

Schlagwörter: epitaxial films, ferroelectrics, hafnia, non‐volatile memory devices

Dateibeschreibung: application/pdf; text/xml

Relation: advs72520; https://www.repository.cam.ac.uk/handle/1810/392497

Verfügbarkeit: https://www.repository.cam.ac.uk/handle/1810/392497

Electrical Bistability in a Composite of Polymer and Barium Titanate Nanoparticles

Autoren: Salaoru, I. Paul, S.

Quelle: Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2009 Oct . 367(1905), 4227-4234.

Zugangs-URL: https://www.jstor.org/stable/40485772

Comparisons on Different Liquid Crystals Doped with Various Sized Gold Nanoparticles for Nonvolatile Memory Effects

Autoren: Marino L Koduru HK Marino S et al.

Quelle: Nanoscience & Technology: Open Access. 4:1-10

Schlagwörter: 0404 agricultural biotechnology, 04 agricultural and veterinary sciences, 0405 other agricultural sciences, The demand for ever more efficient non-volatile memory devices has triggered intense research into new materials and novel device architectures. In this context, nano-composite materials obtained by dispersing metallic nano-particles in liquid crystal materials, seems to be particularly promising. In this work we investigated non-volatile memory effects in two different orthoconic smectic liquid crystal mixtures with and without the addition of two different kind of polymer capped gold nanoparticles by means of broadband dielectric spectroscopy, which is a powerful method to study molecular dynamics and molecular mobility of various materials reflected in the relaxation processes over a wide frequency range. The dielectric measurements have been performed by applying bias during spectra aquisition or by applying the condition potential before the start of spectra aquisition, in order to confirm how the electric field induces charge transfer from the liquid crystal molecules to the polymeric capping of the gold nanoparticles acting as a trap for ionic charges. The results underline the importance of the structure of the host liquid crystal, the size of the nanoparticles but, above all, the kind of the polymer coating on the gold nanoparticles. The observed memory effect is of paramount importance in development of digital nonvolatile memory devices. Keywords: Liquid Crystals, Nanotechnology, Dielectric

Zugangs-URL: https://symbiosisonlinepublishing.com/nanoscience-technology/nanoscience-technology42.pdf
https://symbiosisonlinepublishing.com/nanoscience-technology/nanoscience-technology42.pdf
https://symbiosisonlinepublishing.com/nanoscience-technology/nanoscience-technology42.php

Toward Efficient Mixed-Signal Neural Processors Using Non-Volatile Memory Devices

Autoren: Bavandpour, Mohammad

Schlagwörter: Computer engineering, Electrical engineering, Computer science, Mixed-Signal Circuits, Neural Networks, Neural Processors, Non-Volatile Memory Devices, Time-Domain VMM, Vector by Matrix Multiplier

Dateibeschreibung: application/pdf

Zugangs-URL: https://escholarship.org/uc/item/3548k39r
https://escholarship.org/content/qt3548k39r/qt3548k39r.pdf

Acceleration of Convolutional Networks Using Nanoscale Memristive Devices

Autoren: Kulkarni, Shruti R. Babu, Anakha V. Rajendran, Bipin et al.

Weitere Verfasser: Kulkarni, Shruti R. Babu, Anakha V. Rajendran, Bipin et al.

Quelle: Communications in Computer and Information Science ISBN: 9783319982038

Schlagwörter: Artificial neural networks, Spiking neural networks, Non-volatile memory devices, Programming variability, Memristors

Zugangs-URL: https://link.springer.com/chapter/10.1007%2F978-3-319-98204-5_20
https://dblp.uni-trier.de/db/conf/eann/eann2018.html#KulkarniBR18
https://researchwith.njit.edu/en/publications/acceleration-of-convolutional-networks-using-nanoscale-memristive
https://rd.springer.com/chapter/10.1007/978-3-319-98204-5_20

Organic ferroelectric opto-electronic memories

Autoren: Asadi, K. Li, M. Blom, P.W.M. et al.

Weitere Verfasser: Asadi, K. Li, M. Blom, P.W.M. et al.

Quelle: Materials Today, 14(12), pp. 592-599.

Schlagwörter: Industrial Innovation, Ferroelectricity, Mechanical Engineering, Organic non-volatile memory devices, Thermoelectric equipment, Clever designs, Optoelectronic devices, Condensed Matter Physics, Diodes, Light emitting diodes, Memory array, Electronic device, Materials Science(all), Latest development, Mechanics of Materials, Memory technology, Bistables

Zugangs-URL: https://research.rug.nl/en/publications/organic-ferroelectric-opto-electronic-memories
http://www.diva-portal.org/smash/record.jsf?pid=diva2:1145767
http://www.sciencedirect.com/science/article/pii/S1369702111703005
https://www.rug.nl/research/portal/files/6772908/2011MaterTodayAsadi.pdf
https://repository.tno.nl/islandora/object/uuid%3A4be1cc5a-9cbb-48b0-925e-c593108133dd
https://pure.rug.nl/ws/files/6772908/2011MaterTodayAsadi.pdf
https://resolver.tno.nl/uuid:4be1cc5a-9cbb-48b0-925e-c593108133dd

Organic Nonvolatile Memory Devices Based on Ferroelectricity

Autoren: Naber, R.C.G. Asadi, K. Blom, P.W.M. et al.

Weitere Verfasser: Naber, R.C.G. Asadi, K. Blom, P.W.M. et al.

Quelle: Advanced Materials, 22(9), pp. 933-945.

Schlagwörter: Nonvolatile storage, Computer Storage Devices, Ferroelectricity, Organic non-volatile memory devices, Organic compound, Ferroelectric capacitors, Signal Processing, Computer-Assisted, Equipment Design, 02 engineering and technology, Field effect transistors, 01 natural sciences, Memory array, 0104 chemical sciences, Magnetics, Electronic devices, Equipment design, Electronics, Organic Chemicals, 0210 nano-technology

Zugangs-URL: https://pure.rug.nl/ws/files/6743791/2010AdvMaterNaber.pdf
https://pubmed.ncbi.nlm.nih.gov/20217816
https://pubmed.ncbi.nlm.nih.gov/20217816/
https://www.rug.nl/research/portal/files/6743791/2010AdvMaterNaber.pdf
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200900759
https://researchportal.bath.ac.uk/en/publications/organic-nonvolatile-memory-devices-based-on-ferroelectricity
https://www.ncbi.nlm.nih.gov/pubmed/20217816
https://europepmc.org/article/MED/20217816
https://resolver.tno.nl/uuid:0ea99756-6c54-4d64-bf2c-0b6c47ff06e5
https://publications.tno.nl/publication/34633367/C0N2z5/w09033.pdf
https://resolver.tno.nl/uuid:775c3b7c-4fdf-4de7-baef-f4a0bdcc6623

nanosession variants of resistive switching

Autoren: Riccardo Rurali Julien Buckley Benoit Corraze et al.

Weitere Verfasser: Riccardo Rurali Julien Buckley Benoit Corraze et al.

Schlagwörter: resistance random access memory (ReRAM), bipolar resistive switching (BRS), TiO2 films, Pt/Nb:SrTiO3 interfaces, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], non-volatile memory devices, multiferroic BiFeO3, transtition metal oxide, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Zugangs-URL: https://www.onlinelibrary.wiley.com/doi/10.1002/9783527667703.ch45
https://hal.science/hal-01716453v1
https://doi.org/10.1002/9783527667703.ch45

Strong electron correlation effects in non-volatile electronic memory devices

Autoren: Inoue, I.H. Rozenberg, M.J. Yasuda, S. et al.

Schlagwörter: Computational methods, Electric insulators, Electronic equipment, Interfaces (computer), Mathematical models, Sandwich structures, Semiconductor materials, Switching systems, Correlated electron devices, Domain-tunneling (DT), Non volatile memory devices, Semiconductor/metal interfaces, Data storage equipment

Relation: https://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue

Verfügbarkeit: https://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue

CONDUCTIVE AFM ANALYSIS OF THE TRAPPING PROPERTIES OF SIO2 TUNNEL LAYERS FOR NON-VOLATILE MEMORY DEVICES

Autoren: M. Lanza M. Porti M. Nafría et al.

Weitere Verfasser: M. Lanza M. Porti M. Nafría et al.

Quelle: http://www.tntconf.org/2009/Abstracts/Posters/TNT2009_Lanza.pdf.

Schlagwörter: Conductive Atomic Force Microscopy, electrical characterization, non-volatile memory devices

Dateibeschreibung: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.643.2205; http://www.tntconf.org/2009/Abstracts/Posters/TNT2009_Lanza.pdf

Verfügbarkeit: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.643.2205
http://www.tntconf.org/2009/Abstracts/Posters/TNT2009_Lanza.pdf

Non-volatile FPGA architecture using resistive switching devices

Autoren: Ho, Patrick W. C.

Schlagwörter: non-volatile memory devices, memristors, field programmable gate arrays, resistive switching devices

Dateibeschreibung: application/pdf

Relation: https://eprints.nottingham.ac.uk/39677/1/Patrick%20W%20C%20Ho%20-%20PhD%20Thesis.pdf; Ho, Patrick W. C. (2017) Non-volatile FPGA architecture using resistive switching devices. PhD thesis, University of Nottingham Malaysia Campus (UNMC).

Verfügbarkeit: https://eprints.nottingham.ac.uk/39677/

Strong electron correlation effects in non-volatile electronic memory devices

Autoren: Rozenberg, Marcelo Javier

Schlagwörter: Computational methods, Electric insulators, Electronic equipment, Interfaces (computer), Mathematical models, Sandwich structures, Semiconductor materials, Switching systems, Correlated electron devices, Domain-tunneling (DT), Non volatile memory devices, Semiconductor/metal interfaces, Data storage equipment

Relation: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue; https://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue

Verfügbarkeit: https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue
https://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue

High tunneling magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions constructed by two-dimensional Mn 2 P 2 Se 6 /Sc 2 CO 2 van der Waals heterostructures.

Autoren: Zhou YH Xu W Liu Y et al.

Quelle: Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2025 Nov 18; Vol. 37 (47). Date of Electronic Publication: 2025 Nov 18.

Publikationsart: Journal Article

Info zur Zeitschrift: Publisher: IOP Pub Country of Publication: England NLM ID: 101165248 Publication Model: Electronic Cited Medium: Internet ISSN: 1361-648X (Electronic) Linking ISSN: 09538984 NLM ISO Abbreviation: J Phys Condens Matter Subsets: PubMed not MEDLINE; MEDLINE

Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach.

Autoren: Kim JS Gaggio B Bakhit B et al.

Quelle: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2025 Nov 14, pp. e17314. Date of Electronic Publication: 2025 Nov 14.

Publikationsart: Journal Article

Info zur Zeitschrift: Publisher: WILEY-VCH Country of Publication: Germany NLM ID: 101664569 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2198-3844 (Electronic) Linking ISSN: 21983844 NLM ISO Abbreviation: Adv Sci (Weinh) Subsets: MEDLINE