Search Results - "NONVOLATILE random-access memory"

Bipolar resistive switching memory with bismuth sulfide quantum dots.

Authors: Rohilla, Ritu Goswami, Lalita Bisht, Arti et al.

Source: Journal of Applied Physics. 6/7/2025, Vol. 137 Issue 21, p1-9. 9p.

Subject Terms: *NONVOLATILE random-access memory, *SCHOTTKY barrier, *SPIN coating, *DATA warehousing, *QUANTUM states, *MEMRISTORS, *BISMUTH, *QUANTUM dots

3D kinetic Monte Carlo-based investigation of the influence of dopants on the reliability of VCM ReRAM.

Authors: Kopperberg, N. Genua Noguera, D. Menzel, S.

Source: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-9. 9p.

Subject Terms: *NONVOLATILE random-access memory, *OXYGEN vacancy, *CURRENT fluctuations, *DOPING agents (Chemistry), *VALENCE fluctuations

Conductive metal oxide and hafnium oxide bilayer resistive random-access memory: An ab initio study.

Authors: Honet, Antoine Todri-Sanial, Aida

Source: Journal of Applied Physics. 2/28/2025, Vol. 137 Issue 8, p1-9. 9p.

Subject Terms: *NONVOLATILE random-access memory, *HAFNIUM oxide, *DENSITY functional theory, *METALLIC oxides, *ATOMS

Fabricating a NOR Gate Using Quantum Dot Gate FETs.

Authors: Parent, Elisa Legassey, Allen Jain, Faquir

Source: International Journal of High Speed Electronics & Systems. Mar2026, Vol. 35 Issue 1, p1-7. 7p.

Subject Terms: *LOGIC, NONVOLATILE random-access memory, QUANTUM gates, TRANSISTORS

Theoretical insights into the ultrahigh piezoelectric performance of (BiFeO3)n/(BaTiO3)n (n = 1–5) superlattices.

Authors: Wang, Xin Yang, Jucai Zhao, Erjun et al.

Source: Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-10. 10p.

Subject Terms: *NONVOLATILE random-access memory, *NANOELECTROMECHANICAL systems, *DENSITY functional theory, *MICROELECTROMECHANICAL systems, *DIELECTRIC properties, *SUPERLATTICES

Large resistive switching in ultrathin BiFeO3 thin films.

Authors: Ma, Zhijun Wang, Zhiwei Zhang, Qi et al.

Source: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-7. 7p.

Subject Terms: *NONVOLATILE random-access memory, *PULSED laser deposition, *SUBSTRATES (Materials science), *THIN films, *MEMRISTORS

Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.

Authors: Qiu, Qi-Rui Chang, Sheng-Po Liu, Tzu-Yuan et al.

Source: Modern Physics Letters B. 12/20/2025, Vol. 39 Issue 35, p1-10. 10p.

Subject Terms: *NONVOLATILE random-access memory, *CURRENT-voltage characteristics, *DURABILITY, *NONVOLATILE memory, *TRANSITION metal oxides, *MEMRISTORS, *ELECTRIC conductivity

Tailoring Resistive Switching Properties of Ga2O3‐x Films: Role of Growth Parameters.

Authors: Ghosh, Ankita Mandal, Rupam Mandal, Aparajita et al.

Source: Physica Status Solidi. A: Applications & Materials Science. Oct2025, p1. 9p. 9 Illustrations.

Subject Terms: *NONVOLATILE random-access memory, *OXYGEN vacancy, *OXIDE coating, *THIN films, *NONVOLATILE memory, *MECHANICAL behavior of materials

Kesterite CZTS-based RRAM device for neuromorphic applications.

Authors: Yadav, Ankit Kumar Prakash, Chandra Pandey, Akhilesh et al.

Source: Journal of Applied Physics; 8/14/2025, Vol. 138 Issue 6, p1-11, 11p

Subject Terms: ARTIFICIAL neural networks, ELECTRONIC data processing, NONVOLATILE random-access memory, ENERGY consumption, COMPUTER storage devices

HfO2-based resistive random access memory with an ultrahigh switching ratio.

Authors: Pan, Jinyan He, Hongyang Huang, Qiao et al.

Source: Journal of Applied Physics. 8/21/2024, Vol. 136 Issue 7, p1-12. 12p.

Subject Terms: *NONVOLATILE random-access memory, *MAGNETRON sputtering, *ATOMIC layer deposition, *METAL fibers, *DATA warehousing, *MAGNETRONS

High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory.

Authors: Liu, Xian-Qin Ma, Haijiao Harsan Zhang, Siwen et al.

Source: Applied Physics Letters. 9/8/2025, Vol. 127 Issue 10, p1-8. 8p.

Subject Terms: *MEMRISTORS, *NONVOLATILE random-access memory, *ALUMINUM nitride, *SEMICONDUCTORS, *THRESHOLD voltage

Programming optimization for alleviating relaxation effect in RRAM high-resistance state.

Authors: Wan, Jiale Wang, Xiaohu Wang, Yongbo et al.

Source: Applied Physics Letters. 9/8/2025, Vol. 127 Issue 10, p1-7. 7p.

Subject Terms: *NONVOLATILE random-access memory, *RELAXATION phenomena, *ELECTRIC admittance, *AMPLITUDE modulation, *CUMULATIVE distribution function

Evolution of Non‐Volatile to Volatile Memory Behaviour in HfO2/TiO2 Bilayer Thin Film Based RRAM.

Authors: Mir, Kifayat H. Garg, Tarun

Source: Physica Status Solidi. A: Applications & Materials Science. Sep2025, Vol. 222 Issue 17, p1-12. 12p.

Subject Terms: *NONVOLATILE random-access memory, *NONVOLATILE memory, *THIN film devices, *ELECTRIC testing, *MULTILAYERED thin films, *RAPID thermal processing

Resistive random access memory based artificial neural network for brain-inspired neuromorphic computing.

Authors: Sun, Xiao Xia, Zhipeng Wang, Tianyu et al.

Source: Materials Today. Sep2025, Vol. 88, p567-584. 18p.

Subject Terms: *ARTIFICIAL neural networks, *NONVOLATILE random-access memory, *ACTION potentials, *ARTIFICIAL intelligence, *NEUROPLASTICITY

Reliable Neuromorphic and Nociceptive Behavior in Dual‐Stacked IGZO/ZrOX Resistive Random Access Memory for Transparent Memory Applications.

Authors: Jo, Seo‐Young Jang, Heeseong Mishra, Dhananjay et al.

Source: Physica Status Solidi - Rapid Research Letters. Aug2025, p1. 7p. 4 Illustrations.

Subject Terms: *NOCICEPTIVE pain, *NONVOLATILE random-access memory, *COMPUTER memory management, *ARTIFICIAL neural networks, *OXYGEN vacancy, *ARTIFICIAL intelligence

3D Stacking Enabled Non‐Volatile Multi‐Level Optically/Electrically Writeable/Readable Memory.

Authors: Ho, Chia‐Chun Chao, Yu‐Chieh Lin, Jia‐Yu et al.

Source: Advanced Materials Technologies. 7/8/2025, Vol. 10 Issue 13, p1-8. 8p.

Subject Terms: *NONVOLATILE memory, *NONVOLATILE random-access memory, *PHOTOELECTRIC devices, *QUANTUM dots, *PHOTOELECTRIC cells, *PHOTOELECTRIC effect, *COMPUTER storage devices

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.

Authors: Liu, Kai Jiang, Wengui Zhou, Liang et al.

Source: Nanomaterials (2079-4991). Jul2025, Vol. 15 Issue 13, p1033. 16p.

Subject Terms: *TWO-dimensional materials (Nanotechnology), *NONVOLATILE random-access memory, *NEUROMORPHICS, *HETEROSTRUCTURES, *APPLIED sciences

Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory.

Authors: Park, Yongjin Lee, Jong-Ho Lee, Jung-Kyu et al.

Source: Journal of Chemical Physics. 2/21/2024, Vol. 160 Issue 7, p1-9. 9p.

Subject Terms: *NONVOLATILE random-access memory, *FERROELECTRIC thin films, *RANDOM access memory, *PATTERN recognition systems, *PINK noise, *DIELECTRIC films

Shining light on devices: New perspectives in non-volatile memory device and material investigation.

Authors: Jan, Atif Kelly, Dawn M. Di Martino, Giuliana

Source: APL Electronic Devices. Jun2025, Vol. 1 Issue 2, p1-20. 20p.

Subject Terms: *NONVOLATILE random-access memory, *SCANNING tunneling microscopy, *TRANSMISSION electron microscopy, *ATOMIC force microscopy, *DATA warehousing, *PLASMONICS

Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena.

Authors: Kim, Hyoseob Kim, Suhan Cho, Jae-Yeong et al.

Source: Scientific Reports. 4/19/2025, Vol. 15 Issue 1, p1-12. 12p.

Subject Terms: *NONVOLATILE random-access memory, *HEAT transfer, *ELECTRIC capacity, *CAPACITORS, *HEATING