Suchergebnisse - "N-polar GaN"

Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(000(1)over-bar)

Autoren: Zhang, Hengfang Chen, Jr-Tai Papamichail, Alexis et al.

Quelle: Journal of Crystal Growth. 651

Schlagwörter: N-polar GaN, epitaxial growth, SiC substrate misorientation angle, Multi-step temperature growth, MOCVD

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-210437
https://liu.diva-portal.org/smash/get/diva2:1921430/FULLTEXT01.pdf

High-quality N-polar GaN optimization by multi-step temperature growth process

Autoren: Zhang, Hengfang Chen, Jr-Tai Papamichail, Alexis et al.

Quelle: Journal of Crystal Growth. 603

Schlagwörter: A1, N-polar GaN, A2, epitaxial III-nitride, A3, surface morphology, B1, MOCVD, B2, 2-step temperature process, C1, Ga supersaturation

Dateibeschreibung: electronic

Zugangs-URL: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-194834
https://liu.diva-portal.org/smash/get/diva2:1767853/FULLTEXT01.pdf

Optimizing Process Technologies for Nitrogen-Polar GaN Devices

Autoren: Kayede, Emmanuel

Schlagwörter: Electrical engineering, Computer engineering, Engineering, Chemical engineering, GaN Schottky Diodes, N-polar GaN, Wet Chemical Etching of GaN

Zugangs-URL: https://escholarship.org/uc/item/1v82c25h

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries

Autoren: Runxian Xing Hongyang Guo Bohan Guo et al.

Quelle: Frontiers of Optoelectronics, Vol 18, Iss 1, Pp 1-11 (2025)

Schlagwörter: N-polar GaN HEMT, Terahertz emission, Dyakonov–Shur instability, Applied optics. Photonics, TA1501-1820

Dateibeschreibung: electronic resource

Relation: https://doaj.org/toc/2095-2767

Zugangs-URL: https://doaj.org/article/6d9977a1c17d43309716584e72c94e43

Study of Low-Temperature (Al)GaN on N-Polar GaN Films Grown by MOCVD on Vicinal SiC Substrates

Autoren: Yong Yang Xianfeng Ni Qian Fan et al.

Quelle: Materials ; Volume 18 ; Issue 3 ; Pages: 638

Schlagwörter: N-polar GaN, MOCVD, surface morphology, low-temperature (Al)GaN, HEMTs

Dateibeschreibung: application/pdf

Relation: https://dx.doi.org/10.3390/ma18030638

Verfügbarkeit: https://doi.org/10.3390/ma18030638

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al 0.24 Ga 0.76 N

Autoren: Emmanuel Kayede Emre Akso Brian Romanczyk et al.

Quelle: Crystals, Vol 14, Iss 6, p 485 (2024)

Schlagwörter: wet etching, N-polar GaN, AlGaN, HEMT, n+ GaN regrowth, Crystallography, QD901-999

Relation: https://www.mdpi.com/2073-4352/14/6/485; https://doaj.org/toc/2073-4352; https://doaj.org/article/b59664daceea49888ae3d60c552f771c

Verfügbarkeit: https://doi.org/10.3390/cryst14060485
https://doaj.org/article/b59664daceea49888ae3d60c552f771c

Development of S-parameter DLTS applied to Next Generation of Materials and Devices

Autoren: Clymore, Christopher

Schlagwörter: Electrical engineering, Device Modeling, Load pull, mm-Wave Transistors, N-polar GaN, RF Measurements, Trap Analysis

Zugangs-URL: https://escholarship.org/uc/item/4j69h8nk

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Autoren: Mohamadali Malakoutian Daniel E. Field Nicholas J. Hines et al.

Quelle: ACS Applied Materials & Interfaces. 13:60553-60560

Schlagwörter: name=CDTR, polycrystalline diamond, thermal boundary resistance, N-polar GaN, thermal management, 02 engineering and technology, 0210 nano-technology, 7. Clean energy, 5G networks

Zugangs-URL: https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13833
https://pubmed.ncbi.nlm.nih.gov/34875169

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Autoren: Markus Pristovsek Itsuki Furuhashi Xu Yang et al.

Quelle: Crystals, Vol 14, Iss 9, p 822 (2024)

Schlagwörter: N-polar AlN, N-polar GaN, MOVPE, impurity incorporation, GaN relaxation, Crystallography, QD901-999

Dateibeschreibung: electronic resource

Relation: https://www.mdpi.com/2073-4352/14/9/822; https://doaj.org/toc/2073-4352

Zugangs-URL: https://doaj.org/article/a2682d4b21554794ac76cc31db257d7b

First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

Autoren: Swarnav Mukhopadhyay Surjava Sanyal Guangying Wang et al.

Quelle: Crystals, Vol 13, Iss 1457, p 1457 (2023)

Schlagwörter: N-polar GaN, propane doping, semi-insulating N-polar GaN, C-doped N-polar GaN, growth rate optimization, Crystallography, QD901-999

Relation: https://www.mdpi.com/2073-4352/13/10/1457; https://doaj.org/toc/2073-4352; https://doaj.org/article/a5fe67af1b4d41adbcc4cc2f1edd1400

Verfügbarkeit: https://doi.org/10.3390/cryst13101457
https://doaj.org/article/a5fe67af1b4d41adbcc4cc2f1edd1400

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects

Autoren: Saro, Marco de Pieri, Francesco Carlotto, Andrea et al.

Quelle: 2024 IEEE International Reliability Physics Symposium (IRPS). :5B.2-1

Schlagwörter: Current collapse, Deep levels, HEMT, N-Polar-GaN, Reliability

Growth of N-Polar (000 1 - ) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

Autoren: Markus Pristovsek Itsuki Furuhashi Pietro Pampili

Quelle: Crystals, Vol 13, Iss 7, p 1072 (2023)

Schlagwörter: N-polar GaN, MOVPE, impurity incorporation, blue luminescence, Crystallography, QD901-999

Relation: https://www.mdpi.com/2073-4352/13/7/1072; https://doaj.org/toc/2073-4352; https://doaj.org/article/87571bc17bb34f449abb6c76bc0fa48e

Verfügbarkeit: https://doi.org/10.3390/cryst13071072
https://doaj.org/article/87571bc17bb34f449abb6c76bc0fa48e

Surface Morphology Evolution of N-Polar Gan on Sic for Hemt Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

Autoren: Lili Huo Ravikiran Lingaparthi Nethaji Dharmarasu et al.

Weitere Verfasser: Lili Huo Ravikiran Lingaparthi Nethaji Dharmarasu et al.

Quelle: SSRN Electronic Journal.

Schlagwörter: Electrical and electronic engineering [Engineering], N-polar GaN, Surface Morphology Evolution

Zugangs-URL: https://hdl.handle.net/10356/169937

Electrical Properties of SiO2/GaN MOS Capacitors Fabricated on GaN(000\overline{1}) Substrates / GaN(000\overline{1})面上に形成したSiO2/GaN MOSキャパシタの電気特性評価

Autoren: Akitaka Yoshigoe Heiji Watanabe Hidetoshi Mizobata et al.

Quelle: JSAP Annual Meetings Extended Abstracts. 2021, :2400

A Study on the Growth Window of Polycrystalline Diamond on Si 3 N 4 -coated N-Polar GaN

Autoren: Mohamadali Malakoutian Matthew A. Laurent Srabanti Chowdhury

Quelle: Crystals, Vol 9, Iss 10, p 498 (2019)

Schlagwörter: polycrystalline diamond growth, n-polar gan, thermal management, active device cooling, stress analysis, Crystallography, QD901-999

Relation: https://www.mdpi.com/2073-4352/9/10/498; https://doaj.org/toc/2073-4352; https://doaj.org/article/f83736cc503e49cebaa96d079bb3d245

Verfügbarkeit: https://doi.org/10.3390/cryst9100498
https://doaj.org/article/f83736cc503e49cebaa96d079bb3d245

N極性GaN HEMT構造におけるコンタクト抵抗の低減 / Reduction of Contact Resistance for N-polar GaN HEMT fabrication process by using ion implantation

Autoren: Akihiro Hayasaka Isao Makabe Masahiro Mori et al.

Quelle: JSAP Annual Meetings Extended Abstracts. 2020, :2783

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Autoren: Su, Zhaole Li, Yangfeng Hu, Xiaotao et al.

Quelle: Materials (Basel)
Materials; Volume 15; Issue 9; Pages: 3005

Schlagwörter: 0103 physical sciences, N-polar GaN, MOCVD, nitriding, AlN, 01 natural sciences, Article

Dateibeschreibung: application/pdf

Zugangs-URL: https://pubmed.ncbi.nlm.nih.gov/35591340

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

Autoren: Zhang, Hengfang Persson, Ingemar Chen Jr., Tai et al.

Quelle: Crystal Growth and Design; 23(2), pp 1049-1056 (2023) ; ISSN: 1528-7483

Schlagwörter: Materials Engineering, N-polar GaN, polarity, TEM, MOCVD

Relation: http://dx.doi.org/10.1021/acs.cgd.2c01199; scopus:85146584823

Verfügbarkeit: https://lup.lub.lu.se/record/36fcc436-27b9-49e1-84b4-de6347561b70
https://doi.org/10.1021/acs.cgd.2c01199

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

Autoren: Huo, Lili Lingaparthi, Ravikiran Dharmarasu, Nethaji et al.

Weitere Verfasser: Huo, Lili Lingaparthi, Ravikiran Dharmarasu, Nethaji et al.

Schlagwörter: N-polar GaN, Surface Morphology Evolution

Relation: Journal of Physics D: Applied Physics; https://hdl.handle.net/10356/169937; 34; 56; 345302

Verfügbarkeit: https://hdl.handle.net/10356/169937
https://doi.org/10.1088/1361-6463/accde9

Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes

Autoren: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) Wang, Yu-Lin ( author ) Chu, B.H. ( author ) et al.

Quelle: Sensors and Actuators B: Chemical. 142:175-178

Schlagwörter: Ga-polar GaN, 0103 physical sciences, N-polar GaN, GaN Schottky diodes, Ga-face GaN, 02 engineering and technology, Hydrogen sensors, 0210 nano-technology, 01 natural sciences, 7. Clean energy, N-face GaN

Dateibeschreibung: [Elsevier APIv3]

Zugangs-URL: https://www.sciencedirect.com/science/article/pii/S0925400509006054