Suchergebnisse - "Molecular-beam Epitaxy"

Measurement of stresses and critical thickness of MBE-grown (013)HgTe layer by nonlinear diagnostic methods.

Autoren: Stupak, M. F. Dvoretsky, S. A. Mikhailov, N. N. et al.

Quelle: Journal of Applied Physics. 11/21/2025, Vol. 138 Issue 19, p1-10. 10p.

Schlagwörter: *MOLECULAR beam epitaxy, *ELLIPSOMETRY, *SECOND harmonic generation, *STRESS relaxation (Mechanics), *RESIDUAL stresses

Degradation of minority carrier lifetime and performance of mid-wave infrared GaInAsSbBi nBn photodetectors as a function of 63 MeV proton irradiation.

Autoren: Newell, A. T. Logan, J. V. Carrasco, R. A. et al.

Quelle: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-9. 9p.

Schlagwörter: *ALLOYS, *MOLECULAR beam epitaxy, *PHOTOLUMINESCENCE, *QUANTUM efficiency, *DARK currents (Electric)

Sensitivity assessment of 4.8 μm cutoff GaInAsSbBi nBn photodetectors for mid-wave infrared sensing applications.

Autoren: Carrasco, Rigo A. Webster, Preston T. Newell, Alexander T. et al.

Quelle: Journal of Applied Physics. 9/28/2025, Vol. 138 Issue 12, p1-8. 8p.

Schlagwörter: *PHOTODETECTORS, *MOLECULAR beam epitaxy, *SPECTRAL irradiance, *QUANTUM efficiency, *VALENCE bands

Oxygen vacancy driven resistive switching in SrTiO3/Si(001) heterostructures due to an electronic mechanism.

Autoren: Kollias, Patrick Cottier, Ryan Miracle, John et al.

Quelle: Journal of Applied Physics. 6/28/2025, Vol. 137 Issue 24, p1-11. 11p.

Schlagwörter: *OXYGEN vacancy, *MOLECULAR beam epitaxy, *THIN films, *STRONTIUM titanate, *SUBSTRATES (Materials science)

Bandgaps in cubic InGaN for the entire composition range including many-body effects.

Autoren: Rose, Jonas Baron, Elias Goldhahn, Rüdiger et al.

Quelle: Journal of Applied Physics. 6/28/2025, Vol. 137 Issue 24, p1-8. 8p.

Schlagwörter: *MOLECULAR beam epitaxy, *PERMITTIVITY, *THIN films, *SPHALERITE, *INDIUM gallium nitride

Photo-Hall effect characterization and terahertz wave generation with 1550 nm excitation in InAs/GaAs quantum dot superlattice based photoconductive antenna.

Autoren: Minami, Yasuo Simmen, Ayumi Kitada, Takahiro et al.

Quelle: Journal of Applied Physics. 6/7/2025, Vol. 137 Issue 21, p1-8. 8p.

Schlagwörter: *MOLECULAR beam epitaxy, *SUBMILLIMETER waves, *QUANTUM dots, *ANTENNAS (Electronics), *LIGHT emitting diodes, *SUPERLATTICES, *TERAHERTZ spectroscopy

Optical properties of basal plane stacking faults in AlN nanowires.

Autoren: Guérin, Corentin Jourdan, Fabien Rouvière, Jean-Luc et al.

Quelle: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-8. 8p.

Schlagwörter: *MOLECULAR beam epitaxy, *QUANTUM wells, *OPTICAL properties, *PHOTOLUMINESCENCE, *EPITAXY, *NANOWIRES

Magnetization switching by spin–orbit torques in perpendicular Pt/Co epitaxial multilayers.

Autoren: Huo, Yuping Zhao, Yunchi Zhang, QiQi et al.

Quelle: Journal of Applied Physics. 5/7/2025, Vol. 137 Issue 17, p1-7. 7p.

Schlagwörter: *MAGNETIZATION reversal, *MOLECULAR beam epitaxy, *MAGNETIC domain, *ELECTRIC potential measurement, *MAGNETIC fields

Short-range order and longer-range disorder revealed in germanium–tin alloy thin films by extended x-ray absorption fine structure analysis.

Autoren: Lentz, J. Zachary Zhao, Haochen Woicik, J. C. et al.

Quelle: Journal of Applied Physics. 4/14/2025, Vol. 137 Issue 14, p1-11. 11p.

Schlagwörter: *MOLECULAR beam epitaxy, *CHEMICAL vapor deposition, *THIN films, *SUBSTRATES (Materials science), *SOLID solutions, *EXTENDED X-ray absorption fine structure

An x-ray diffraction and Raman spectroscopic analysis of thin-films of silicon grown by ultrahigh-vacuum evaporation and the thin-film silicon continuum.

Autoren: Cheung, Sin Hang Lockwood, David J. Baribeau, Jean-Marc et al.

Quelle: Journal of Applied Physics. 4/7/2025, Vol. 137 Issue 13, p1-18. 18p.

Schlagwörter: *MOLECULAR beam epitaxy, *SILICON films, *SUBSTRATES (Materials science), *GRAZING incidence, *DIFFRACTION patterns

Arsenic activation and compensation in single crystal CdTe bilayers.

Autoren: Mathew, A. T. Lott, H. Colegrove, E. et al.

Quelle: Journal of Applied Physics. 3/21/2025, Vol. 137 Issue 11, p1-11. 11p.

Schlagwörter: *CARRIER density, *MOLECULAR beam epitaxy, *HIGH temperatures, *SINGLE crystals, *BILAYERS (Solid state physics)

Optimization of HgCdTe nBn photodetectors utilizing a superlattice barrier.

Autoren: Sellers, Ryan Man, Peihong El Khalidi, Zahira et al.

Quelle: Journal of Applied Physics. 2/28/2025, Vol. 137 Issue 8, p1-15. 15p.

Schlagwörter: *MOLECULAR beam epitaxy, *CONDUCTION bands, *SUBSTRATES (Materials science), *PHOTODETECTORS, *DETECTORS

Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 μm.

Autoren: Webster, Preston T. Carrasco, Rigo A. Newell, Alexander T. et al.

Quelle: Journal of Applied Physics. 2/14/2025, Vol. 137 Issue 6, p1-9. 9p.

Schlagwörter: *MOLECULAR beam epitaxy, *RUTHERFORD backscattering spectrometry, *MOLE fraction, *SURFACE morphology, *REDUCTION potential

Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures.

Autoren: Tröger, Jan Kersting, Reinhard Hagenhoff, Birgit et al.

Quelle: Journal of Applied Physics. 1/14/2025, Vol. 137 Issue 2, p1-11. 11p.

Schlagwörter: *SEMICONDUCTOR manufacturing, *MOLECULAR beam epitaxy, *ERROR functions, *QUANTUM wells, *BILAYERS (Solid state physics), *DEPTH profiling

Integrating and manipulating topological insulators in pursuit of spintronic and dissipationless applications

Autoren: Fernández Aguirre, Iván

Thesis Advisors: Bonell , Frédéric, Valenzuela Ramello, Sergio Osvaldo, Sort Viñas, Jordi

Quelle: TDX (Tesis Doctorals en Xarxa)

Schlagwörter: Aïllants topològics, Topological insulators, Aislantes topológicos, Grafè, Graphene, Grafeno, Epitaxia per raigs moleculars, Molecular beam epitaxy, Epitaxia por haces moleculares, Ciències Experimentals

Time: 538.9

Dateibeschreibung: application/pdf

Zugangs-URL: http://hdl.handle.net/10803/691729

Combinatorial composition-gradient and -aligned CsPb(Br1−xIx)3 films by IR-laser MBE.

Autoren: Takahashi, Ryota Kuroda, Teppei Dazai, Takuro et al.

Quelle: Journal of Applied Physics. 12/7/2024, Vol. 136 Issue 21, p1-9. 9p.

Schlagwörter: *MOLECULAR beam epitaxy, *MOLECULAR gas lasers, *INFRARED lasers, *COMBINATORIAL chemistry, *LASER beams

Desorption kinetics of indium adlayers on GaN(0001): Fractional order and non-monotonic behavior.

Autoren: Lymperakis, L. Lymperakis, K. Iliopoulos, E.

Quelle: Journal of Applied Physics. 12/7/2024, Vol. 136 Issue 21, p1-12. 12p.

Schlagwörter: *MOLECULAR beam epitaxy, *DESORPTION kinetics, *DENSITY functional theory, *EPITAXY, *METALLIC surfaces

Broadband cavity-enhanced optical flux monitoring.

Autoren: Rousseau, Roman Botella, Claude Morville, Jérôme et al.

Quelle: Journal of Applied Physics. 11/14/2024, Vol. 136 Issue 18, p1-8. 8p.

Schlagwörter: *MOLECULAR beam epitaxy, *CATHODES, *OPTICAL resonators, *MONOCHROMATORS, *DETECTORS

Electron beam induced multi-wavelength lasing in CdSe quantum dot lasers.

Autoren: Akimoto, Ryoichi¹ (AUTHOR) r-akimoto@aist.go.jp

Quelle: Journal of Applied Physics. 11/7/2024, Vol. 136 Issue 17, p1-9. 9p.

Schlagwörter: *MOLECULAR beam epitaxy, *QUANTUM dots, *QUANTUM efficiency, *POINT defects, *SUBSTRATES (Materials science), *ELECTRON beams

Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation.

Autoren: Kelly, Frank P. Landi, Matthew M. Vesto, Riley E. et al.

Quelle: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-8. 8p.

Schlagwörter: *MOLECULAR beam epitaxy, *SURFACE roughness, *EPITAXY, *NITRIDATION, *SUBSTRATES (Materials science)