Výsledky vyhľadávania - "Mebarki, Mohamed Aniss"

GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications.

Autori: Mebarki, Mohamed Aniss Ferrand-Drake Del Castillo, Ragnar Pavolotsky, Alexey a ďalší

Zdroj: Physica Status Solidi. A: Applications & Materials Science; Apr2023, Vol. 220 Issue 8, p1-9, 9p

Predmety: GALLIUM nitride, SUPERCONDUCTING transitions, SUPERCONDUCTING transition temperature, TRANSITION temperature, CRITICAL temperature, SUPERCONDUCTIVITY, TRANSISTORS, MODULATION-doped field-effect transistors