Suchergebnisse - "MOVPE method"

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Autoren: Gamze Yolcu İlkay Demir

Quelle: Volume: 46, Issue: 2390-395
Cumhuriyet Science Journal

Schlagwörter: MOVPE method, SiH₄ doping source, epitaxial growth, carrier density, n AlₓGa₁₋ₓAs layers, Lasers and Quantum Electronics, Photonics, Optoelectronics and Optical Communications, Lazerler ve Kuantum Elektroniği, Fotonik, Optoelektronik ve Optik İletişim

Dateibeschreibung: application/pdf

Zugangs-URL: https://dergipark.org.tr/tr/pub/csj/issue/93334/1672625

Die-bonding study for double-channel ridge waveguide AlGaInPlaser diodes

Autoren: Z. W. Yang M. F. Huang J. T. Hsu et al.

Weitere Verfasser: Z. W. Yang M. F. Huang J. T. Hsu et al.

Schlagwörter: Injection laser, Ridge waveguide, Channel waveguide, Scanning electron microscopy, Cross section, Low pressure, MOVPE method, Chip, Thermal characteristic, Thermal resistance, Indium Phosphides, Gallium Phosphides, Aluminium Phosphides, Ternary compound, III-V compound

Time: 45

Relation: Proc. SPIE, Volume 3626, 1999, Pages 98; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68074

Verfügbarkeit: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68074